Infineon Technologies Products - Diodes - Rectifiers - Single

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
56DN06ELEMEVMITPRXPSA1	Infineon Technologies	DIODE GP 600V 6400A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6400A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	Package: -	Request a Quote	600 V	6400A	1.15 V @ 10000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	E-EUPEC-0	180°C (Max)
IDWD75E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock720	-	-	-	-	-	-	-	-	-	-	-
SIDC42D60E6X1SA1	Infineon Technologies	DIODE GP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	100A	1.25 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
IDWD20E65E7XKSA1	Infineon Technologies	HOME APPLIANCES 14 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 42A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 74 ns Current - Reverse Leakage @ Vr: 20 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: PG-TO247-2-2 Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock720	650 V	42A	2.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	74 ns	20 µA @ 650 V	-	Through Hole	TO-247-2	PG-TO247-2-2	-40°C ~ 175°C
D56S45CS02PRXPSA1	Infineon Technologies	DIODE GP 4.5KV 102A DSW272-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4500 V Current - Average Rectified (Io): 102A Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.3 µs Current - Reverse Leakage @ Vr: 5 mA @ 4500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: Stud Supplier Device Package: BG-DSW272-1 Operating Temperature - Junction: 125°C (Max)	Package: -	Request a Quote	4500 V	102A	4.5 V @ 320 A	Standard Recovery >500ns, > 200mA (Io)	3.3 µs	5 mA @ 4500 V	-	Stud Mount	Stud	BG-DSW272-1	125°C (Max)
D400K16BXPSA1	Infineon Technologies	DIODE GEN PURP 1.6KV 450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 450A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	1600 V	450A	-	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 1600 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 180°C
DZ540N22KHPSA1	Infineon Technologies	DIODE GEN PURP 2.2KV 732A MODULE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 732A Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	2200 V	732A	1.64 V @ 2200 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Chassis Mount	Module	Module	-40°C ~ 150°C
SIDC23D120H8X1SA1	Infineon Technologies	DIODE GP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	1200 V	35A	1.97 V @ 35 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 1200 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDP06E60XKSA1	Infineon Technologies	DIODE GP 600V 14.7A TO220-2-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 14.7A Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	14.7A	2 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	50 µA @ 600 V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
SIDC09D60F6X1SA5	Infineon Technologies	DIODE GEN PURP 600V 30A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SIDC09D60F6X1SA4	Infineon Technologies	DIODE GEN PURP 600V 30A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SIDC09D60F6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 30A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SIDC09D60F6X1SA2	Infineon Technologies	DIODE GP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	30A	1.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
ND350N16KHPSA1	Infineon Technologies	DIODE GP 1.6KV 350A PB50ND-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 350A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40°C ~ 135°C	Package: -	Request a Quote	1600 V	350A	-	Standard Recovery >500ns, > 200mA (Io)	-	30 mA @ 1600 V	-	Chassis Mount	Module	BG-PB50ND-1	-40°C ~ 135°C
IDDD20G65C6XTMA1	Infineon Technologies	DIODE SIL CARB 650V 51A HDSOP-10 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 51A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 67 µA @ 420 V Capacitance @ Vr, F: 970pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,782	650 V	51A	-	No Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
D2450N04TXPSA1	Infineon Technologies	DIODE GEN PURP 400V 2450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2450A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	400 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 400 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 180°C
SIDC23D60E6X1SA5	Infineon Technologies	DIODE GEN PURP 600V 50A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	50A	1.25 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-55°C ~ 150°C
SIDC23D60E6X1SA4	Infineon Technologies	DIODE GP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	50A	1.25 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 50A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	50A	1.25 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-55°C ~ 150°C
ND89N12KHPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 89A PB20-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 89A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB20-1 Operating Temperature - Junction: -40°C ~ 135°C	Package: -	Stock48	1200 V	89A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1200 V	-	Chassis Mount	Module	BG-PB20-1	-40°C ~ 135°C
PX8746JDNG029XTMA1	Infineon Technologies	LED PX8746JDNG029XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D3041N58TXPSA1	Infineon Technologies	DIODE GEN PURP 5.8KV 4090A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5800 V Current - Average Rectified (Io): 4090A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 5800 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	5800 V	4090A	1.7 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 5800 V	-	Chassis Mount	DO-200AE	-	-40°C ~ 160°C
D4201N18TS01VFXPSA1	Infineon Technologies	DIODE GP 2.2KV 6010A D12035K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 6010A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D12035K-1 Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	2200 V	6010A	1 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	200 mA @ 2200 V	-	Chassis Mount	DO-200AE	BG-D12035K-1	-40°C ~ 160°C
D6001N50TS05XPSA1	Infineon Technologies	DIODE GP 5KV 8010A D15026K-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 8010A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400 mA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: BG-D15026K-1 Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	5000 V	8010A	1.3 V @ 6000 A	Standard Recovery >500ns, > 200mA (Io)	-	400 mA @ 5000 V	-	Chassis Mount	DO-200AE	BG-D15026K-1	-40°C ~ 160°C
D1800N48TVFXPSA1	Infineon Technologies	DIODE GEN PURP 4.8KV 1800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4800 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	4800 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4800 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
IDW75E60FKSA1	Infineon Technologies	DIODE GP 600V 120A TO247-3-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 2 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 121 ns Current - Reverse Leakage @ Vr: 40 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	120A	2 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	121 ns	40 µA @ 600 V	-	Through Hole	TO-247-3	PG-TO247-3-1	-55°C ~ 175°C
PX3746HDNSM1386XTMA1	Infineon Technologies	LED PX3746HDNSM1386XTMA1 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
BAS3005B02VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 30 V Capacitance @ Vr, F: 10pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock722,334	30 V	500mA	620 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	25 µA @ 30 V	10pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
D629N44TPR	Infineon Technologies	RECTIFIER DIODE MODULE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
IDWD50E120D7XKSA1	Infineon Technologies	INDUSTRY 14 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock720	-	-	-	-	-	-	-	-	-	-	-

56DN06ELEMEVMITPRXPSA1

Infineon Technologies

DIODE GP 600V 6400A E-EUPEC-0

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6400A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)

Package: -

Request a Quote

600 V

6400A

1.15 V @ 10000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 600 V

-

Clamp On

DO-200AB, B-PUK

E-EUPEC-0

180°C (Max)

IDWD75E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Stock720

-

SIDC42D60E6X1SA1

Infineon Technologies

DIODE GP 600V 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

600 V

100A

1.25 V @ 100 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

IDWD20E65E7XKSA1

Infineon Technologies

HOME APPLIANCES 14

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 42A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 74 ns
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Stock720

650 V

42A

2.1 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

74 ns

20 µA @ 650 V

-

Through Hole

TO-247-2

PG-TO247-2-2

-40°C ~ 175°C

D56S45CS02PRXPSA1

Infineon Technologies

DIODE GP 4.5KV 102A DSW272-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4500 V
Current - Average Rectified (Io): 102A
Voltage - Forward (Vf) (Max) @ If: 4.5 V @ 320 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.3 µs
Current - Reverse Leakage @ Vr: 5 mA @ 4500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: Stud
Supplier Device Package: BG-DSW272-1
Operating Temperature - Junction: 125°C (Max)

Package: -

Request a Quote

4500 V

102A

4.5 V @ 320 A

Standard Recovery >500ns, > 200mA (Io)

3.3 µs

5 mA @ 4500 V

-

Stud Mount

Stud

BG-DSW272-1

125°C (Max)

D400K16BXPSA1

Infineon Technologies

DIODE GEN PURP 1.6KV 450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 450A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

Package: -

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1600 V

450A

-

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 1600 V

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 180°C

DZ540N22KHPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 732A MODULE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 732A
Voltage - Forward (Vf) (Max) @ If: 1.64 V @ 2200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C

Package: -

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2200 V

732A

1.64 V @ 2200 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2200 V

-

Chassis Mount

Module

-40°C ~ 150°C

SIDC23D120H8X1SA1

Infineon Technologies

DIODE GP 1.2KV 35A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 35A
Voltage - Forward (Vf) (Max) @ If: 1.97 V @ 35 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

1200 V

35A

1.97 V @ 35 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 1200 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

IDP06E60XKSA1

Infineon Technologies

DIODE GP 600V 14.7A TO220-2-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 14.7A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

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600 V

14.7A

2 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

70 ns

50 µA @ 600 V

-

Through Hole

TO-220-2

PG-TO220-2-1

-40°C ~ 175°C

SIDC09D60F6X1SA5

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

600 V

30A

1.6 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

SIDC09D60F6X1SA4

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

600 V

30A

1.6 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

SIDC09D60F6X1SA1

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

600 V

30A

1.6 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-40°C ~ 175°C

SIDC09D60F6X1SA2

Infineon Technologies

DIODE GP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

Package: -

Request a Quote

600 V

30A

1.6 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

ND350N16KHPSA1

Infineon Technologies

DIODE GP 1.6KV 350A PB50ND-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 350A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB50ND-1
Operating Temperature - Junction: -40°C ~ 135°C

Package: -

Request a Quote

1600 V

350A

-

Standard Recovery >500ns, > 200mA (Io)

-

30 mA @ 1600 V

-

Chassis Mount

Module

BG-PB50ND-1

-40°C ~ 135°C

IDDD20G65C6XTMA1

Infineon Technologies

DIODE SIL CARB 650V 51A HDSOP-10

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 51A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 67 µA @ 420 V
Capacitance @ Vr, F: 970pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Supplier Device Package: PG-HDSOP-10-1
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Stock4,782

650 V

51A

-

No Recovery Time > 500mA (Io)

0 ns

67 µA @ 420 V

970pF @ 1V, 1MHz

Surface Mount

10-PowerSOP Module

PG-HDSOP-10-1

-55°C ~ 175°C

D2450N04TXPSA1

Infineon Technologies

DIODE GEN PURP 400V 2450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2450A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

Package: -

Request a Quote

400 V

2450A

880 mV @ 2000 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 400 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 180°C

SIDC23D60E6X1SA5

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

600 V

50A

1.25 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-55°C ~ 150°C

SIDC23D60E6X1SA4

Infineon Technologies

DIODE GP 600V 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

600 V

50A

1.25 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC23D60E6X1SA1

Infineon Technologies

DIODE GEN PURP 600V 50A DIE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 150°C

Package: -

Request a Quote

600 V

50A

1.25 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

27 µA @ 600 V

-

Surface Mount

Die

-55°C ~ 150°C

ND89N12KHPSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 89A PB20-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 89A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: BG-PB20-1
Operating Temperature - Junction: -40°C ~ 135°C

Package: -

Stock48

1200 V

89A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1200 V

-

Chassis Mount

Module

BG-PB20-1

-40°C ~ 135°C

PX8746JDNG029XTMA1

Infineon Technologies

LED PX8746JDNG029XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

D3041N58TXPSA1

Infineon Technologies

DIODE GEN PURP 5.8KV 4090A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5800 V
Current - Average Rectified (Io): 4090A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 5800 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

Package: -

Request a Quote

5800 V

4090A

1.7 V @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 5800 V

-

Chassis Mount

DO-200AE

-

-40°C ~ 160°C

D4201N18TS01VFXPSA1

Infineon Technologies

DIODE GP 2.2KV 6010A D12035K-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 6010A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: BG-D12035K-1
Operating Temperature - Junction: -40°C ~ 160°C

Package: -

Request a Quote

2200 V

6010A

1 V @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

-

200 mA @ 2200 V

-

Chassis Mount

DO-200AE

BG-D12035K-1

-40°C ~ 160°C

D6001N50TS05XPSA1

Infineon Technologies

DIODE GP 5KV 8010A D15026K-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5000 V
Current - Average Rectified (Io): 8010A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: BG-D15026K-1
Operating Temperature - Junction: -40°C ~ 160°C

Package: -

Request a Quote

5000 V

8010A

1.3 V @ 6000 A

Standard Recovery >500ns, > 200mA (Io)

-

400 mA @ 5000 V

-

Chassis Mount

DO-200AE

BG-D15026K-1

-40°C ~ 160°C

D1800N48TVFXPSA1

Infineon Technologies

DIODE GEN PURP 4.8KV 1800A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4800 V
Current - Average Rectified (Io): 1800A
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AC, K-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 160°C

Package: -

Request a Quote

4800 V

1800A

1.32 V @ 1500 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 4800 V

-

Clamp On

DO-200AC, K-PUK

-

-40°C ~ 160°C

IDW75E60FKSA1

Infineon Technologies

DIODE GP 600V 120A TO247-3-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 2 V @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 121 ns
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C

Package: -

Request a Quote

600 V

120A

2 V @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

121 ns

40 µA @ 600 V

-

Through Hole

TO-247-3

PG-TO247-3-1

-55°C ~ 175°C

PX3746HDNSM1386XTMA1

Infineon Technologies

LED PX3746HDNSM1386XTMA1

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

BAS3005B02VH6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 30 V
Capacitance @ Vr, F: 10pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C

Package: -

Stock722,334

30 V

500mA

620 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

25 µA @ 30 V

10pF @ 5V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

-55°C ~ 125°C

D629N44TPR

Infineon Technologies

RECTIFIER DIODE MODULE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Request a Quote

-

IDWD50E120D7XKSA1

Infineon Technologies

INDUSTRY 14

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

Package: -

Stock720

-