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Fairchild/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1845pF @ 15V
- Vgs (Max): ±25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
|
Package: 8-SOIC (0.154", 3.90mm Width) |
Stock3,980,904 |
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Diodes Incorporated |
MOSFET N-CH 30V 1.8A SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,720,392 |
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|
|
Nexperia USA Inc. |
MOSFET P-CH 20V 2.8A SOT-23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 744pF @ 20V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 480mW (Ta)
- Rds On (Max) @ Id, Vgs: 74 mOhm @ 2.8A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB (SOT23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock223,128 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 0.9A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 109pF @ 10V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 220 mOhm @ 900mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock503,136 |
|
|
|
|
Fairchild/ON Semiconductor |
MOSFET N-CH 20V 1.3A SSOT3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 162pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 1.5A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,566,768 |
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|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 29.8 mOhm @ 3A, 4.5V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Package: SOT-23-3 Flat Leads |
Stock40,200 |
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Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 30V 4.3A SOT23
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3L
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,652,040 |
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Diodes Incorporated |
MOSFET N-CH 20V 1.3A 3DFN
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 64.3pF @ 25V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Rds On (Max) @ Id, Vgs: 175 mOhm @ 300mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
|
Package: 3-XFDFN |
Stock1,373,580 |
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Diodes Incorporated |
MOSFET N-CH 50V 200MA SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,221,240 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 680MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,517,196 |
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|
ON Semiconductor |
MOSFET N-CH 100V 170MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock1,098,564 |
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|
ON Semiconductor |
MOSFET N-CH 50V 200MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,160,040 |
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Diodes Incorporated |
MOSFET P-CH 50V 130MA SOT23-3
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50V
- Current - Continuous Drain (Id) @ 25°C: 130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300mW (Ta)
- Rds On (Max) @ Id, Vgs: 10 Ohm @ 100mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock5,170,908 |
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|
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 220MA SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Vgs(th) (Max) @ Id: 1.06V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
- Vgs (Max): ±8V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock7,609,752 |
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|
Diodes Incorporated |
MOSFET N-CH 60V 115MA SOT23-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock127,124,664 |
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ON Semiconductor |
MOSFET N-CH 60V 0.115A SOT-23
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 225mW (Ta)
- Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
|
Package: TO-236-3, SC-59, SOT-23-3 |
Stock11,691,168 |
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Microsemi Corporation |
PWR MOSFET RF N-CH 900V TO-247AD
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock7,264 |
|
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Microsemi Corporation |
PWR MOSFET RF N-CH 900V TO-247AD
- Transistor Type: -
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: -
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock6,768 |
|
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|
Broadcom Limited |
FET RF 5V 10GHZ 0402
- Transistor Type: E-pHEMT
- Frequency: 10GHz
- Gain: 9dB
- Voltage - Test: 3V
- Current Rating: 100mA
- Noise Figure: 0.81dB
- Current - Test: 20mA
- Power - Output: 12dBm
- Voltage - Rated: 5V
- Package / Case: 0402 (1005 Metric)
- Supplier Device Package: 0402
|
Package: 0402 (1005 Metric) |
Stock5,280 |
|
|
|
|
Fairchild/ON Semiconductor |
JFET N-CH 25V 10MA TO92
- Transistor Type: N-Channel JFET
- Frequency: 400MHz
- Gain: -
- Voltage - Test: 15V
- Current Rating: 10mA
- Noise Figure: 4dB
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock183,996 |
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|
CEL |
FET RF 4V 2GHZ 4-SMINI
- Transistor Type: HFET
- Frequency: 2GHz
- Gain: 17.5dB
- Voltage - Test: 2V
- Current Rating: 60mA
- Noise Figure: 0.4dB
- Current - Test: 10mA
- Power - Output: 11dBm
- Voltage - Rated: 4V
- Package / Case: SOT-343F
- Supplier Device Package: M04
|
Package: SOT-343F |
Stock6,816 |
|
|
|
|
Fairchild/ON Semiconductor |
JFET N-CH 25V 20MA TO92
- Transistor Type: N-Channel JFET
- Frequency: -
- Gain: -
- Voltage - Test: -
- Current Rating: 20mA
- Noise Figure: -
- Current - Test: -
- Power - Output: -
- Voltage - Rated: 25V
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
|
Package: TO-226-3, TO-92-3 (TO-226AA) |
Stock4,752 |
|
|
|
|
Microsemi Corporation |
RF MOSFET N-CHANNEL 50V M174
- Transistor Type: N-Channel
- Frequency: 150MHz
- Gain: 11dB
- Voltage - Test: 50V
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 150W
- Voltage - Rated: 170V
- Package / Case: M174
- Supplier Device Package: M174
|
Package: M174 |
Stock3,280 |
|
|
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|
M/A-Com Technology Solutions |
FET RF 2CH 125V 175MHZ 375-04
- Transistor Type: 2 N-Channel (Dual) Common Source
- Frequency: 175MHz
- Gain: 16dB
- Voltage - Test: 50V
- Current Rating: 40A
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 300W
- Voltage - Rated: 125V
- Package / Case: 375-04
- Supplier Device Package: 375-04, Style 2
|
Package: 375-04 |
Stock2,000 |
|
|
|
|
Microsemi Corporation |
MOSFET RF PWR N-CH 50V 150W M174
- Transistor Type: N-Channel
- Frequency: 150MHz
- Gain: 11dB
- Voltage - Test: 50V
- Current Rating: 1mA
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 150W
- Voltage - Rated: 170V
- Package / Case: M174
- Supplier Device Package: M174
|
Package: M174 |
Stock5,520 |
|
|
|
|
M/A-Com Technology Solutions |
HEMT N-CH 28V 25W DC-4000MHZ
- Transistor Type: HEMT
- Frequency: 0Hz ~ 4GHz
- Gain: 13dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 225mA
- Power - Output: -
- Voltage - Rated: 100V
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Stock4,496 |
|
|
|
|
STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10
- Transistor Type: LDMOS
- Frequency: 500MHz
- Gain: 14dB
- Voltage - Test: 12.5V
- Current Rating: 5A
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 15W
- Voltage - Rated: 40V
- Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Supplier Device Package: PowerSO-10RF (Formed Lead)
|
Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
Stock7,152 |
|
|
|
|
Broadcom Limited |
FET RF 5V 2GHZ SOT-343
- Transistor Type: pHEMT FET
- Frequency: 2GHz
- Gain: 16.6dB
- Voltage - Test: 3V
- Current Rating: 120mA
- Noise Figure: 0.5dB
- Current - Test: 60mA
- Power - Output: 20.4dBm
- Voltage - Rated: 5V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: SOT-343
|
Package: SC-82A, SOT-343 |
Stock1,561,968 |
|
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