Alpha & Omega Semiconductor Inc. Products

IGBT 650V 40A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
• Power - Max: 300W
• Switching Energy: 1.27mJ (on), 460µJ (off)
• Input Type: Standard
• Gate Charge: 63nC
• Td (on/off) @ 25°C: 41ns/130ns
• Test Condition: 400V, 40A, 7.5 Ohm, 15V
• Reverse Recovery Time (trr): 346ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

MOSFET N-CH 600V 4A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

MOSFET N-CH 1000V 2.8A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 132W (Tc)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

MOSFET N-CH 700V 11A TO220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 700V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 50W (Tc)
• Rds On (Max) @ Id, Vgs: 870 mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3F
• Package / Case: TO-220-3 Full Pack

MOSFET N-CH 30V 24A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 3.1W (Ta), 70W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (3x3)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET N CH 30V 29A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

MOSFET 2N-CH 30V 6.9A

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6.9A
• Rds On (Max) @ Id, Vgs: 27 mOhm @ 6.9A, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

MOSFET 2N-CH 30V 9.1A/16A 8DFN

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.1A, 16A
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 9.1A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 15V
• Power - Max: 1.9W, 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVDFN
• Supplier Device Package: 8-DFN (5x6)

MOSFET 2P-CH 30V 7.1A 8SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.1A
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 7.1A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

MOSFET 2P-CH 20V SC70-6

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 600mA, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 10V
• Power - Max: 300mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

IC ANLG SWITCH SPDT SC70-6

• Switch Circuit: SPDT
• Multiplexer/Demultiplexer Circuit: 2:1
• Number of Circuits: 1
• On-State Resistance (Max): 1.2 Ohm
• Channel-to-Channel Matching (ΔRon): 30 mOhm
• Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 40ns, 20ns
• -3db Bandwidth: 180MHz
• Charge Injection: 75pC
• Channel Capacitance (CS(off), CD(off)): 7pF
• Current - Leakage (IS(off)) (Max): 20nA
• Crosstalk: -60dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-70-6

TVS DIODE 24VWM 37VC 2DFN

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V (Max)
• Voltage - Breakdown (Min): 27V
• Voltage - Clamping (Max) @ Ipp: 37V
• Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
• Power - Peak Pulse: 110W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 20pF @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0402 (1006 Metric)
• Supplier Device Package: 2-DFN (1x0.6)

IC REG BUCK SYNC 8SOIC

• Function: -
• Output Configuration: -
• Topology: -
• Output Type: -
• Number of Outputs: -
• Voltage - Input (Min): -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: -
• Synchronous Rectifier: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

POWER IC EZBUCK

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 4V
• Voltage - Input (Max): 28V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 23.8V
• Current - Output: 6A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerTFQFN
• Supplier Device Package: 22-QFN (4x4)

MOSFET N-CH 600V 8A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 96W (Tc)
• Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

MOSFET N-CH 30V 5X6 DFN

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

IGBT 650V 50A TO-247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 100 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
• Power - Max: 375 W
• Switching Energy: 1.92mJ (on), 850µJ (off)
• Input Type: Standard
• Gate Charge: 76 nC
• Td (on/off) @ 25°C: 37ns/141ns
• Test Condition: 400V, 50A, 6Ohm, 15V
• Reverse Recovery Time (trr): 261 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

MOSFET N-CH 30V 60A/400A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 400A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15350 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.2W (Ta), 400W (Tc)
• Rds On (Max) @ Id, Vgs: 1.05mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6)
• Package / Case: 8-PowerSMD, Flat Leads

IC REG FLYBACK 13SOIC

• Function: Step-Up/Step-Down
• Output Configuration: Positive
• Topology: Flyback
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 7.5V
• Voltage - Input (Max): 25V
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Current - Output: -
• Frequency - Switching: 65kHz
• Synchronous Rectifier: No
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width), 13 Leads
• Supplier Device Package: 13-SOIC

IC POWER MOD DRMOS QFN

• Type: MOSFET
• Configuration: 1 Phase
• Current: 50 A
• Voltage: -
• Voltage - Isolation: -
• Package / Case: 31-PowerVFQFN Module

MOSFET N-CH 30V 7.5A/20A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 20W (Tc)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN-EP (3x3)
• Package / Case: 8-PowerVDFN

750V SILICON CARBIDE MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 750 V
• Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 6mA
• Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
• Vgs (Max): +15V, -5V
• FET Feature: -
• Power Dissipation (Max): 103W (Tc)
• Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

ECPOWER 20V 39M PROTECTION SWITC

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 3.4V ~ 22V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 39mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (3x3)

N

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 113W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252 (DPAK)
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

IGBT 1350V 30A TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

LINEAR IC

• Driven Configuration: High-Side and Low-Side
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600 V
• Rise / Fall Time (Typ): 125ns, 50ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOP

MOSFET N-CH 30V 5.7A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.45V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 26.5mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant

MOSFET P-CH 30V 4A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 15 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: 3-SMD, SOT-23-3 Variant