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Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 2A KBPM
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 165°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
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Package: 4-SIP, KBPM |
Stock7,840 |
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Standard | 1000V | 2A | 1.1V @ 3.14A | 5µA @ 1000V | -55°C ~ 165°C (TJ) | Through Hole | 4-SIP, KBPM | KBPM |
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IXYS |
DIODE BRIDGE FAST 1600V KAMM-MOD
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 2.2V @ 55A
- Current - Reverse Leakage @ Vr: 5mA @ 1600V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: KAMM
- Supplier Device Package: KAMM
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Package: KAMM |
Stock3,328 |
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Standard | 1600V | 25A | 2.2V @ 55A | 5mA @ 1600V | -40°C ~ 125°C (TJ) | Chassis Mount | KAMM | KAMM |
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Vishay Semiconductor Diodes Division |
BRIDGE SGL PHASE 100V 4A 4-GBL
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: 4-SIP, GBL |
Stock2,208 |
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Standard | 100V | 4A | - | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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IXYS |
IC MOD DIODE 1PHASE BRIDGE UGB1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 10500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: UGB-1
- Supplier Device Package: UGB-1
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Package: UGB-1 |
Stock4,336 |
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Standard | 10500V | 1A | - | - | 150°C (TJ) | Chassis Mount | UGB-1 | UGB-1 |
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IXYS |
DIODE BRIDGE 31A 1200V AVAL FO-A
- Diode Type: Single Phase
- Technology: Avalanche
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.36V @ 55A
- Current - Reverse Leakage @ Vr: 300µA @ 1200V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, FO-A
- Supplier Device Package: FO-A
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Package: 4-Square, FO-A |
Stock3,920 |
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Avalanche | 1200V | 38A | 1.36V @ 55A | 300µA @ 1200V | -40°C ~ 150°C (TJ) | QC Terminal | 4-Square, FO-A | FO-A |
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IXYS |
DIODE BRIDGE 35A 800V PWS-A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 40µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
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Package: PWS-A |
Stock2,928 |
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Standard | 800V | 35A | 1.1V @ 15A | 40µA @ 800V | -40°C ~ 150°C (TJ) | Chassis Mount | PWS-A | PWS-A |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 1000V GBPC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: 4-Square, GBPC |
Stock7,680 |
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Standard | 1000V | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Diodes Incorporated |
RECT BRIDGE GPP 800V 20A GBJ
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
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Package: 4-SIP, GBJ |
Stock11,784 |
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Standard | 800V | 20A | 1.05V @ 10A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Comchip Technology |
RECTIFIER BRIDGE 10A 600V KBPCW
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, KBPC-W
- Supplier Device Package: KBPC-W
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Package: 4-Square, KBPC-W |
Stock6,368 |
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Standard | 600V | 10A | 1.1V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 15A 800V BU-5S
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, BU-5S
- Supplier Device Package: isoCINK+? BU-5S
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Package: 4-SIP, BU-5S |
Stock5,376 |
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Standard | 800V | 15A | 1.05V @ 7.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU-5S | isoCINK+? BU-5S |
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GeneSiC Semiconductor |
DIODE BRIDGE 2A 600V 1PH KBP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBP
- Supplier Device Package: KBP
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Package: 4-SIP, KBP |
Stock103,896 |
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Standard | 600V | 2A | 1.1V @ 2A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 600V 4SMD
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DFS
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Package: 4-SMD, Gull Wing |
Stock4,704 |
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Standard | 600V | 1.5A | 1.1V @ 1.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 1A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: ABS
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Package: 4-SMD, Gull Wing |
Stock6,112 |
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Standard | 400V | 800mA | 950mV @ 400mA | 10µA @ 400V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | ABS |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 400V GBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
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Package: 4-Square, GBPC-W |
Stock3,744 |
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Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Microsemi Corporation |
DIODE BRIDGE 800V 100A SM3
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
- Current - Reverse Leakage @ Vr: 300µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SM3-20H
- Supplier Device Package: M3
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Package: SM3-20H |
Stock6,012 |
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Standard | 800V | 100A | 1.9V @ 300A | 300µA @ 800V | -40°C ~ 150°C (TJ) | Chassis Mount | SM3-20H | M3 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 600V 4SMD
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DFS
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Package: 4-SMD, Gull Wing |
Stock72,000 |
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Standard | 600V | 1A | 1.1V @ 1A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS |
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Microchip Technology |
STD RECTIFIER
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -65°C ~ 160°C
- Mounting Type: Chassis Mount
- Package / Case: Press Fit
- Supplier Device Package: Press Fit
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Package: - |
Request a Quote |
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Standard | 600 V | 10 A | 1.2 V @ 10 A | 10 µA @ 600 V | -65°C ~ 160°C | Chassis Mount | Press Fit | Press Fit |
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NTE Electronics, Inc |
R-SI BRIDGE 1KV 4A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: 4-SIP
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Package: - |
Request a Quote |
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Standard | 1 kV | 4 A | 1 V @ 3 A | 10 µA @ 1000 V | -55°C ~ 125°C (TJ) | Through Hole | 4-ESIP | 4-SIP |
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IXYS |
BIPOLARMODULE-RECTIFIER+BRAKE E2
- Diode Type: Three Phase (Braking)
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.2 kV
- Current - Average Rectified (Io): 240 A
- Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 240 A
- Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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Package: - |
Request a Quote |
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Standard | 1.2 kV | 240 A | 1.92 V @ 240 A | 100 µA @ 1600 V | -40°C ~ 150°C (TJ) | Chassis Mount | E2 | E2 |
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Micro Commercial Co |
DIODE BRIDGE GBJL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJL
- Supplier Device Package: GBJL
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Package: - |
Request a Quote |
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Standard | 600 V | 25 A | 1.05 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C | Through Hole | 4-SIP, GBJL | GBJL |
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Diotec Semiconductor |
BRIDGE 1PH GBS_SIL-1.5-2.3 1000V
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 2.3 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP
- Supplier Device Package: 4-SIP
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Package: - |
Request a Quote |
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Standard | 1 kV | 2.3 A | 1.05 V @ 2 A | 5 µA @ 1000 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP | 4-SIP |
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Micro Commercial Co |
BRIDGE RECT 100V 3A KBPR
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPR
- Supplier Device Package: KBPR
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Package: - |
Request a Quote |
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Standard | 100 V | 3 A | 1.1 V @ 1 A | 10 µA @ 100 V | -55°C ~ 125°C | Through Hole | 4-SIP, KBPR | KBPR |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 1A KBP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBP
- Supplier Device Package: KBP
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Package: - |
Request a Quote |
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Standard | 800 V | 1 A | 1 V @ 1 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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SMC Diode Solutions |
BRIDGE RECT 1PHASE 200V 6A D3K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: D3K
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Package: - |
Request a Quote |
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Standard | 200 V | 6 A | 1.1 V @ 6 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 400V 10A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: - |
Request a Quote |
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Standard | 400 V | 10 A | 1.1 V @ 10 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 50V 3A GBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: - |
Request a Quote |
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Standard | 50 V | 3 A | 1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Taiwan Semiconductor Corporation |
DIODE BRIDGE 6A 200V KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: - |
Request a Quote |
|
Standard | 200 V | 6 A | 1.1 V @ 6 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBJ
- Supplier Device Package: KBJ
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Package: - |
Request a Quote |
|
Standard | 100 V | 4 A | 1 V @ 2 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJ | KBJ |