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Diodes Incorporated |
RECT SILICON 600V 6A RADIAL LEAD
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, RS-6
- Supplier Device Package: RS-6
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Package: 4-SIP, RS-6 |
Stock32,808 |
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Standard | 600V | 6A | 1V @ 3A | 10µA @ 600V | -55°C ~ 125°C (TJ) | Through Hole | 4-SIP, RS-6 | RS-6 |
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Microsemi Corporation |
POWER MODULE DIODE 1200V 40A SP1
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
- Current - Reverse Leakage @ Vr: 800µA @ 1200V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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Package: SP1 |
Stock4,352 |
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Silicon Carbide Schottky | 1200V | 40A | 1.8V @ 40A | 800µA @ 1200V | -40°C ~ 175°C (TJ) | Chassis Mount | SP1 | SP1 |
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IXYS |
RECT BRIDGE 3PH 1600V ECO-PAC1
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 86A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
- Current - Reverse Leakage @ Vr: 40µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC1
- Supplier Device Package: ECO-PAC1
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Package: ECO-PAC1 |
Stock7,740 |
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Standard | 1600V | 86A | 1.14V @ 30A | 40µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | ECO-PAC1 | ECO-PAC1 |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 50A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC40-M
- Supplier Device Package: GBPC40-M
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Package: 4-Square, GBPC40-M |
Stock7,632 |
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Standard | 100V | 50A | 1.1V @ 25A | 10µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC40-M | GBPC40-M |
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GeneSiC Semiconductor |
DIODE BRIDGE 15A 100V 1PH KBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, KBPC-W
- Supplier Device Package: KBPC-W
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Package: 4-Square, KBPC-W |
Stock7,152 |
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Standard | 100V | 15A | 1.1V @ 7.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
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Vishay Semiconductor Diodes Division |
BRIDGE RECT 6A 200V GSIB-5S
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GSIB-5S
- Supplier Device Package: GSIB-5S
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Package: 4-SIP, GSIB-5S |
Stock2,576 |
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Standard | 200V | 6A | 950mV @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 800V GPP GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock26,460 |
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Standard | 800V | 3A | 1V @ 4A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 4A GBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: 4-SIP, GBL |
Stock129,756 |
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Standard | 600V | 4A | 1.1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
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Package: 4-DIP (0.300", 7.62mm) |
Stock2,736 |
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Standard | 600V | 2A | 1.15V @ 2A | 2µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 800V GBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: 4-SIP, GBL |
Stock5,488 |
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Standard | 800V | 1.5A | 1V @ 750mA | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 2A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DBLS
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Package: 4-SMD, Gull Wing |
Stock3,200 |
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Standard | 200V | 2A | 1.15V @ 2A | 2µA @ 200V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DBLS |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 2A 50V 4SIP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 165°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
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Package: 4-SIP, KBPM |
Stock6,592 |
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Standard | 50V | 2A | 1.1V @ 3.14A | 5µA @ 50V | -55°C ~ 165°C (TJ) | Through Hole | 4-SIP, KBPM | KBPM |
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Central Semiconductor Corp |
RECT BRIDGE 500MA 400V 4HD DIP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-HD DIP
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Package: 4-SMD, Gull Wing |
Stock2,000 |
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Standard | 400V | 500mA | 1V @ 400mA | 5µA @ 400V | -65°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | 4-HD DIP |
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SMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 1A DB-M
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-EDIP (0.321", 8.15mm)
- Supplier Device Package: DB-M
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Package: 4-EDIP (0.321", 8.15mm) |
Stock6,656 |
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Standard | 50V | 1A | 1.1V @ 1A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |
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Vishay Semiconductor Diodes Division |
DIODE GPP 8A 200V GPP INLINE GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 3.9A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock2,864 |
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Standard | 200V | 3.9A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Fairchild/ON Semiconductor |
BRIDGE RECT 800V 25A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: 4-SIP, TS-6P |
Stock16,716 |
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Standard | 800V | 25A | 1.1V @ 25A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Micro Commercial Co |
RECTIFIER BRIDGE 6A 200V PB-6
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, PB-6
- Supplier Device Package: PB-6
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Package: 4-Square, PB-6 |
Stock31,722 |
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Standard | 200V | 6A | 1.1V @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, PB-6 | PB-6 |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 2A 200V 1PH WOG
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOG
- Supplier Device Package: WOG
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Package: 4-Circular, WOG |
Stock18,216 |
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Standard | 200V | 2A | 1.1V @ 2A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP, PB
- Supplier Device Package: PB
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Package: - |
Request a Quote |
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Standard | 50 V | 25 A | 1 V @ 12.5 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | PB |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 4A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: - |
Request a Quote |
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Standard | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Taiwan Semiconductor Corporation |
50NS, 1A, 400V, HIGH EFFICIENT R
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
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Package: - |
Stock15,000 |
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Standard | 400 V | 1 A | 1.3 V @ 1 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL |
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Microchip Technology |
BRIDGE RECTIFIER
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 39 A
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ME
- Supplier Device Package: ME
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Package: - |
Request a Quote |
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Standard | 400 V | 25 A | 1.3 V @ 39 A | 1 µA @ 400 V | -65°C ~ 175°C (TJ) | Chassis Mount | ME | ME |
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Rectron USA |
BRIDGE RECT GLASS 1000V 6A RS-6L
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
- Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, RS-6
- Supplier Device Package: RS-6
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Package: - |
Request a Quote |
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Standard | 1 kV | 6 A | 1.05 V @ 6 A | 200 nA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, RS-6 | RS-6 |
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Microchip Technology |
BRIDGE RECTIFIER
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 150 V
- Current - Average Rectified (Io): 22.5 A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 6 A
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, MB
- Supplier Device Package: MB
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Package: - |
Request a Quote |
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Standard | 150 V | 22.5 A | 950 mV @ 6 A | 10 µA @ 150 V | -65°C ~ 150°C (TJ) | Chassis Mount | 4-Square, MB | MB |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 2A DBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
- Current - Reverse Leakage @ Vr: 2 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: DBL
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Package: - |
Stock15,000 |
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Standard | 600 V | 2 A | 1.15 V @ 2 A | 2 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | DBL |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 4A D3K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: D3K
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Package: - |
Stock16,062 |
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Standard | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 25A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: - |
Stock3,600 |
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Standard | 1 kV | 25 A | 1.1 V @ 25 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Surge |
1A -1000V - MBS (TO-269AA) - BRI
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 500 mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 400 mA
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-269AA, 4-BESOP
- Supplier Device Package: TO-269AA (MBS)
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Package: - |
Request a Quote |
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Standard | 1 kV | 500 mA | 1.1 V @ 400 mA | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Surface Mount | TO-269AA, 4-BESOP | TO-269AA (MBS) |