|
|
Vishay Semiconductor Diodes Division |
BRIDGE RECT 1PHASE 1KV 2A KBPM
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 165°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBPM
- Supplier Device Package: KBPM
|
Package: 4-SIP, KBPM |
Stock3,264 |
|
Standard | 1000V | 2A | 1.1V @ 3.14A | 5µA @ 1000V | -55°C ~ 165°C (TJ) | Through Hole | 4-SIP, KBPM | KBPM |
|
|
Fairchild/ON Semiconductor |
IC BRIDGE RECT 4A 200V KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
|
Package: 4-SIP, KBU |
Stock15,804 |
|
Standard | 200V | 4A | 1V @ 4A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
|
|
Fairchild/ON Semiconductor |
RECT BRIDGE GPP 1.5A 200V WOB
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOB
- Supplier Device Package: WOB
|
Package: 4-Circular, WOB |
Stock50,604 |
|
Standard | 200V | 1.5A | 1V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOB | WOB |
|
|
IXYS |
RECT BRIDGE 3PH 1600V PWS-C
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 166A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 50A
- Current - Reverse Leakage @ Vr: 200µA @ 1600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-C
- Supplier Device Package: PWS-C
|
Package: PWS-C |
Stock6,016 |
|
Standard | 1600V | 166A | 1.07V @ 50A | 200µA @ 1600V | -40°C ~ 150°C (TJ) | Chassis Mount | PWS-C | PWS-C |
|
|
Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 100V GBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
|
Package: 4-Square, GBPC-W |
Stock5,456 |
|
Standard | 100V | 25A | 1.1V @ 12.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
GeneSiC Semiconductor |
DIODE BRIDGE 800V 50A KBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, KBPC-W
- Supplier Device Package: KBPC-W
|
Package: 4-Square, KBPC-W |
Stock4,128 |
|
Standard | 800V | 50A | 1.1V @ 25A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 35A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
|
Package: 4-Square, GBPC-W |
Stock7,600 |
|
Standard | 400V | 35A | 1.1V @ 17.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 25A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: 4-SIP, TS-6P |
Stock4,256 |
|
Standard | 400V | 25A | 1.1V @ 25A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 50V 20A GBJ
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: GBJ
|
Package: 4-ESIP |
Stock3,504 |
|
Standard | 50V | 20A | 1.1V @ 20A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBJ |
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 600V GBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
|
Package: 4-SIP, GBL |
Stock3,520 |
|
Standard | 600V | 1.5A | 1V @ 750mA | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 200V 6A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: GBU
|
Package: 4-ESIP |
Stock5,600 |
|
Standard | 200V | 6A | 1.1V @ 6A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |
|
|
IXYS |
MOSFET STAGE BOOST 500V V1-B
- Diode Type: Single Phase (PFC Module)
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.65V @ 22A
- Current - Reverse Leakage @ Vr: 1.5mA @ 600V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V1-B
- Supplier Device Package: V1-B-Pack
|
Package: V1-B |
Stock4,624 |
|
Standard | 600V | 40A | 1.65V @ 22A | 1.5mA @ 600V | -40°C ~ 150°C (TJ) | Chassis Mount | V1-B | V1-B-Pack |
|
|
Diodes Incorporated |
PLANAR SCHOTTKY RECTIFIER HDS T&
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: HDS
|
Package: - |
Request a Quote |
|
Schottky | 100 V | 2 A | 850 mV @ 2 A | 50 µA @ 100 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | HDS |
|
|
NTE Electronics, Inc |
R-SI BRIDGE 1000V 1A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.300", 7.62mm)
- Supplier Device Package: -
|
Package: - |
Request a Quote |
|
Standard | 1 kV | 1 A | 1.2 V @ 1 A | 10 µA @ 1000 V | -65°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | - |
|
|
NTE Electronics, Inc |
R-SI BRIDGE 400V 35A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 35 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: 4-SIP
|
Package: - |
Request a Quote |
|
Standard | 400 V | 35 A | 1.1 V @ 17.5 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | 4-SIP |
|
|
Diotec Semiconductor |
IC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 8.4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
|
Package: - |
Request a Quote |
|
Standard | 400 V | 8.4 A | 1 V @ 12 A | 5 µA @ 400 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Panjit International Inc. |
GBJ-1, GENERAL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 12.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ-1
|
Package: - |
Stock2,217 |
|
Standard | 1 kV | 25 A | 1 V @ 12.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ-1 |
|
|
GeneSiC Semiconductor |
1000V 6A GBJ SINGLE PHASE BRIDGE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
|
Package: - |
Request a Quote |
|
Standard | 1 kV | 6 A | 1.05 V @ 3 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 25A TS-6P
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 12.5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
|
Package: - |
Stock3,435 |
|
Standard | 600 V | 25 A | 920 mV @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
Micro Commercial Co |
BRIDGE RECT 20V 2A MBS-1
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 20 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-269AA, 4-BESOP
- Supplier Device Package: MBS-1
|
Package: - |
Request a Quote |
|
Schottky | 20 V | 2 A | 500 mV @ 2 A | 500 µA @ 20 V | -55°C ~ 150°C (TJ) | Surface Mount | TO-269AA, 4-BESOP | MBS-1 |
|
|
IXYS |
BRIDGE RECT
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 35 A
- Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
- Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: PWS-A
- Supplier Device Package: PWS-A
|
Package: - |
Request a Quote |
|
Standard | 1.6 kV | 35 A | 1.01 V @ 15 A | 40 µA @ 1600 V | -40°C ~ 150°C (TJ) | Chassis Mount | PWS-A | PWS-A |
|
|
Micro Commercial Co |
DIODE BRIDGE KBJL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBJL
- Supplier Device Package: KBJL
|
Package: - |
Request a Quote |
|
Standard | 600 V | 10 A | 1.1 V @ 5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJL | KBJL |
|
|
Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 20 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1.5 A
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: LMBS-1
|
Package: - |
Request a Quote |
|
Schottky | 20 V | 3 A | 550 mV @ 1.5 A | 500 µA @ 20 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | LMBS-1 |
|
|
Micro Commercial Co |
DIODE BRIDGE 6A JB
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, JB
- Supplier Device Package: JB
|
Package: - |
Request a Quote |
|
Standard | 100 V | 6 A | 1.05 V @ 3 A | 10 µA @ 100 V | -55°C ~ 150°C | Through Hole | 4-SIP, JB | JB |
|
|
SanRex Corporation |
6-PK DIODE MODULE 200A/1600V 17M
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1.6 kV
- Current - Average Rectified (Io): 200 A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 200 A
- Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
|
Package: - |
Stock54 |
|
Standard | 1.6 kV | 200 A | 1.35 V @ 200 A | 20 mA @ 1600 V | -40°C ~ 150°C | Chassis Mount | Module | - |
|
|
SMC Diode Solutions |
BRIDGE RECT 1P 400V 1.5A DB-M
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 1.5 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-EDIP (0.321", 8.15mm)
- Supplier Device Package: DB-M
|
Package: - |
Request a Quote |
|
Standard | 400 V | 1.5 A | 1.1 V @ 1.5 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 800V 2A D3K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: D3K
|
Package: - |
Request a Quote |
|
Standard | 800 V | 2 A | 1.1 V @ 2 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 400V 15A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 15 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: GBU
|
Package: - |
Request a Quote |
|
Standard | 400 V | 15 A | 1.1 V @ 15 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |