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Micro Commercial Co |
DIODE BRIDGE GPP 0.5A MB-1
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-DIP (0.200", 5.08mm)
- Supplier Device Package: MB-1
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Package: 4-DIP (0.200", 5.08mm) |
Stock2,192 |
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Standard | 400V | 500mA | 1V @ 400mA | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.200", 5.08mm) | MB-1 |
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Diodes Incorporated |
RECTIFIER BRIDGE 15A 800V MB-35
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, MB-W
- Supplier Device Package: MB-W
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Package: 4-Square, MB-W |
Stock7,008 |
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Standard | 800V | 15A | 1.1V @ 7.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, MB-W | MB-W |
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Diodes Incorporated |
RECT BRIDGE GPP 800V 15A GBPCW
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
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Package: 4-Square, GBPC-W |
Stock5,456 |
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Standard | 800V | 15A | 1.1V @ 7.5A | 5µA @ 800V | -65°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 600V GBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: 4-Square, GBPC-W
- Supplier Device Package: GBPC-W
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Package: 4-Square, GBPC-W |
Stock3,008 |
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Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | - | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Diodes Incorporated |
RECT BRIDGE GPP 50V 10A GBJ
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 5A
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
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Package: 4-SIP, GBJ |
Stock7,760 |
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Standard | 50V | 10A | 1.05V @ 5A | 10µA @ 50V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Vishay Semiconductor Diodes Division |
POWER MOD 3PH BRIDGE 55A MTK
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MT-K Module
- Supplier Device Package: MT-K
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Package: MT-K Module |
Stock3,440 |
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Standard | 1600V | 90A | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | MT-K Module | MT-K |
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Crydom Co. |
MODULE POWER 50A 1200V 3PH BRDG
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1200V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock5,824 |
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Standard | 1200V | 50A | - | - | - | Chassis Mount | Module | Module |
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IXYS |
RECT BRIDGE 100A 800V FO-T-A
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
- Current - Reverse Leakage @ Vr: 500µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: FO-T-A
- Supplier Device Package: FO-T-A
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Package: FO-T-A |
Stock7,968 |
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Standard | 800V | 100A | 1.4V @ 150A | 500µA @ 800V | -40°C ~ 150°C (TJ) | Chassis Mount | FO-T-A | FO-T-A |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 35A KBPC-W
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, KBPC-W
- Supplier Device Package: KBPC-W
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Package: 4-Square, KBPC-W |
Stock5,552 |
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Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 15A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: 4-SIP, TS-6P |
Stock6,800 |
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Standard | 50V | 15A | 1.1V @ 15A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 800V GBL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 750mA
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBL
- Supplier Device Package: GBL
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Package: 4-SIP, GBL |
Stock3,520 |
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Standard | 800V | 1.5A | 1V @ 750mA | 50µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 1A 600V WOG
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Circular, WOG
- Supplier Device Package: WOG
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Package: 4-Circular, WOG |
Stock7,040 |
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Standard | 600V | 1A | 1V @ 1A | 10µA @ 600V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Bourns Inc. |
DIO BR VRRM 1000V 2A MBLS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Chip, Concave Terminals
- Supplier Device Package: -
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Package: Chip, Concave Terminals |
Stock2,320 |
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Standard | 1000V | 2A | 1V @ 2A | 5µA @ 1000V | -55°C ~ 175°C (TJ) | Surface Mount | Chip, Concave Terminals | - |
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Taiwan Semiconductor Corporation |
10A, 800V, STANDARD BRIDGE RECTI
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS-6P
- Supplier Device Package: TS-6P
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Package: - |
Stock4,500 |
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Standard | 800 V | 10 A | 1.1 V @ 10 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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SMC Diode Solutions |
BRIDGE RECT 1PHASE 400V 8A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: GBU
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Package: - |
Request a Quote |
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Standard | 400 V | 8 A | 1.1 V @ 8 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |
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Diodes Incorporated |
MEDIUM/HIGH POWER BRIDGE TT T&R
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 4 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: TTL
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Package: - |
Request a Quote |
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Standard | 600 V | 8 A | 900 mV @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | TTL |
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Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 15 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, JB
- Supplier Device Package: JB
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Package: - |
Request a Quote |
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Standard | 1 kV | 15 A | 1 V @ 7.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, JB | JB |
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Microchip Technology |
PM-DIODE-SIC-SBD-SP6C
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 1.2 kV
- Current - Average Rectified (Io): 200 A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 200 A
- Current - Reverse Leakage @ Vr: 800 µA @ 1200 V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: SP6
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Package: - |
Stock6 |
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Silicon Carbide Schottky | 1.2 kV | 200 A | 1.8 V @ 200 A | 800 µA @ 1200 V | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6 |
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Panjit International Inc. |
DXK,GLASS PASSIVATED BRIDGE RECT
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 2 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP
- Supplier Device Package: DXK
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Package: - |
Stock14,505 |
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Standard | 1 kV | 2 A | 1.05 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP | DXK |
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Central Semiconductor Corp |
SURFACE MOUNT-RECTIFIER-B
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: 4-SMDIP
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Package: - |
Stock132 |
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Standard | 200 V | 1 A | 1.05 V @ 1 A | 5 µA @ 200 V | -65°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | 4-SMDIP |
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Diotec Semiconductor |
IC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 190 V
- Current - Average Rectified (Io): 5.6 A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 mA
- Current - Reverse Leakage @ Vr: 5 µA @ 190 V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: - |
Request a Quote |
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Standard | 190 V | 5.6 A | 900 mV @ 1 mA | 5 µA @ 190 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
Interface
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: - |
Request a Quote |
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Standard | 800 V | 25 A | 1.1 V @ 12.5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Micro Commercial Co |
DIODE BRIDGE GBJL
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 6 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJL
- Supplier Device Package: GBJL
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Package: - |
Request a Quote |
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Standard | 600 V | 6 A | 1 V @ 3 A | 5 µA @ 600 V | -55°C ~ 150°C | Through Hole | 4-SIP, GBJL | GBJL |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 8A D3K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-ESIP
- Supplier Device Package: D3K
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Package: - |
Stock4,464 |
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Standard | 600 V | 8 A | 1.1 V @ 8 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
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EIC SEMICONDUCTOR INC. |
BRIGDE RECTIFIER 8A 400V, CASE T
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 8 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, RBV-25
- Supplier Device Package: RBV-25
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Package: - |
Request a Quote |
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Standard | 400 V | 8 A | 1 V @ 4 A | 10 µA @ 400 V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, RBV-25 | RBV-25 |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 600V 3.8A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 3.8 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: - |
Request a Quote |
|
Standard | 600 V | 3.8 A | 1 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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EIC SEMICONDUCTOR INC. |
STD 25A, CASE TYPE: BR50
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 25 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 4-Square, BR-50
- Supplier Device Package: BR-50
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Package: - |
Request a Quote |
|
Standard | 400 V | 25 A | 1.1 V @ 12.5 A | 10 µA @ 400 V | -40°C ~ 150°C (TJ) | Chassis Mount | 4-Square, BR-50 | BR-50 |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 600V 2.3A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 2.3 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: - |
Request a Quote |
|
Standard | 600 V | 2.3 A | 1 V @ 2 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |