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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1600V 90A MTK
- Diode Type: Three Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1600V
- Current - Average Rectified (Io): 90A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: MTK
- Supplier Device Package: MTK
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Package: MTK |
Stock5,728 |
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Standard | 1600V | 90A | - | - | -40°C ~ 125°C (TJ) | Chassis Mount | MTK | MTK |
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Diodes Incorporated |
RECT BRIDGE GPP 400V 25A GBPC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: 4-Square, GBPC |
Stock3,952 |
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Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -65°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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IXYS |
DIODE BRIDGE 800V 95A ECO-PAC2
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 92A
- Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
- Current - Reverse Leakage @ Vr: 100µA @ 800V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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Package: ECO-PAC2 |
Stock6,240 |
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Standard | 800V | 92A | 1.13V @ 50A | 100µA @ 800V | -40°C ~ 150°C (TJ) | Chassis Mount | ECO-PAC2 | ECO-PAC2 |
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Texas Instruments |
IC SCHOTTKY DIODE BRIDGE 8-DIP
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Operating Temperature: -25°C ~ 125°C (TA)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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Package: 8-DIP (0.300", 7.62mm) |
Stock5,184 |
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Schottky | 50V | 1A | 1.3V @ 1A | 100µA @ 40V | -25°C ~ 125°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Comchip Technology |
RECT BRIDGE CELL 400V 35A KBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBU
- Supplier Device Package: KBU
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Package: 4-SIP, KBU |
Stock3,344 |
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Standard | 400V | 35A | 1.1V @ 17.5A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 600V 20A BU-5S
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 3.5A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, BU-5S
- Supplier Device Package: isoCINK+? BU-5S
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Package: 4-SIP, BU-5S |
Stock6,752 |
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Standard | 600V | 3.5A | 1.05V @ 10A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU-5S | isoCINK+? BU-5S |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 20A BU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 3.5A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, BU
- Supplier Device Package: isoCINK+? BU
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Package: 4-SIP, BU |
Stock2,224 |
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Standard | 800V | 3.5A | 1.05V @ 10A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | isoCINK+? BU |
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Micro Commercial Co |
20A GLASS PASSIVATED BRIDGE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 10A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
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Package: 4-SIP, GBJ |
Stock5,056 |
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Standard | 200V | 20A | 1.05V @ 10A | 10µA @ 200V | -55°C ~ 150°C | Through Hole | 4-SIP, GBJ | GBJ |
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Comchip Technology |
RECTIFIER BRIDGE 1.0A 100V DFS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Gull Wing
- Supplier Device Package: DFS
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Package: 4-SMD, Gull Wing |
Stock4,928 |
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Standard | 100V | 1A | 1.1V @ 1A | 10µA @ 100V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | DFS |
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Taiwan Semiconductor Corporation |
BRIDGE RECTIFIER, STANDARD, 4A,
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1000V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock4,592 |
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Standard | 1000V | 4A | 1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 35A PB
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, PB
- Supplier Device Package: isoCINK+? PB
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Package: 4-SIP, PB |
Stock5,536 |
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Standard | 800V | 35A | 1.1V @ 17.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, PB | isoCINK+? PB |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 6A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: 4-SIP, GBU |
Stock8,460 |
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Standard | 600V | 6A | 1.1V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 35A D-34A
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, D-34
- Supplier Device Package: D-34
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Package: 4-Square, D-34 |
Stock4,192 |
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Standard | 800V | 35A | - | 10µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
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Comchip Technology |
DIODE BRIDGE 2A 60V TO-269AA
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-269AA, 4-BESOP
- Supplier Device Package: Mini-Dip (TO-269AA)
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Package: TO-269AA, 4-BESOP |
Stock67,920 |
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Schottky | 60V | 2A | 700mV @ 2A | 500µA @ 60V | -55°C ~ 125°C (TJ) | Surface Mount | TO-269AA, 4-BESOP | Mini-Dip (TO-269AA) |
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Micro Commercial Co |
BRIDGE RECTIFIERS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 50 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: QC Terminal
- Package / Case: 4-Square, GBPC
- Supplier Device Package: GBPC
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Package: - |
Request a Quote |
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Standard | 1 kV | 50 A | 1.1 V @ 25 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 500MA MBS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 500 mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-BESOP (0.173", 4.40mm Width)
- Supplier Device Package: MBS
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Package: - |
Stock27,189 |
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Standard | 600 V | 500 mA | 1 V @ 2 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-BESOP (0.173", 4.40mm Width) | MBS |
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Micro Commercial Co |
BRIDGE RECTIFIERS
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 15 A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 7.5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
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Package: - |
Request a Quote |
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Standard | 800 V | 15 A | 920 mV @ 7.5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECTIFIER 800V 3.0A D-72
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-Square, KBPC-1
- Supplier Device Package: KBPC1
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Package: - |
Stock687 |
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Standard | 800 V | 3 A | 1.1 V @ 1.5 A | 10 µA @ 800 V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-1 | KBPC1 |
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Microchip Technology |
PM-DIODE-SIC-SBD-SP1F
- Diode Type: Single Phase
- Technology: Silicon Carbide Schottky
- Voltage - Peak Reverse (Max): 700 V
- Current - Average Rectified (Io): 50 A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
- Current - Reverse Leakage @ Vr: 200 µA @ 700 V
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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Package: - |
Stock69 |
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Silicon Carbide Schottky | 700 V | 50 A | 1.8 V @ 50 A | 200 µA @ 700 V | -40°C ~ 175°C (TJ) | Chassis Mount | Module | - |
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GeneSiC Semiconductor |
1000V 10A GBJ SINGLE PHASE BRIDG
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBJ
- Supplier Device Package: GBJ
|
Package: - |
Request a Quote |
|
Standard | 1 kV | 10 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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EIC SEMICONDUCTOR INC. |
BRIGDE RECTIFIER 10A 800V, CASE
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 10 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, RBV-25
- Supplier Device Package: RBV-25
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Package: - |
Request a Quote |
|
Standard | 800 V | 10 A | 1 V @ 5 A | 10 µA @ 800 V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, RBV-25 | RBV-25 |
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Diotec Semiconductor |
IC
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 800 V
- Current - Average Rectified (Io): 1.8 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, KBP
- Supplier Device Package: KBP
|
Package: - |
Request a Quote |
|
Standard | 800 V | 1.8 A | 1.1 V @ 3 A | 5 µA @ 800 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBP | KBP |
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Central Semiconductor Corp |
BRIDGE RECT 1PHASE 600V 1A 4DIP
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-EDIP (0.300", 7.62mm)
- Supplier Device Package: 4-DIP
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Package: - |
Stock12,612 |
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Standard | 600 V | 1 A | 1.1 V @ 1 A | 10 µA @ 600 V | -65°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | 4-DIP |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 400V 3.8A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 400 V
- Current - Average Rectified (Io): 3.8 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
|
Package: - |
Request a Quote |
|
Standard | 400 V | 3.8 A | 1 V @ 6 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 1KV 3A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 1 kV
- Current - Average Rectified (Io): 3 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
|
Package: - |
Request a Quote |
|
Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Good-Ark Semiconductor |
BRIDGE RECTIFIER, SCHOTTKY, 1.0A
- Diode Type: Single Phase
- Technology: Schottky
- Voltage - Peak Reverse (Max): 40 V
- Current - Average Rectified (Io): 1 A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-269AA, 4-BESOP
- Supplier Device Package: TO-269AA (MBS)
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Package: - |
Stock13,488 |
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Schottky | 40 V | 1 A | 500 mV @ 1 A | 500 µA @ 40 V | -55°C ~ 125°C (TJ) | Surface Mount | TO-269AA, 4-BESOP | TO-269AA (MBS) |
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Vishay General Semiconductor - Diodes Division |
BRIDGE RECT 1PHASE 600V 3.8A GBU
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 3.8 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
|
Package: - |
Request a Quote |
|
Standard | 600 V | 3.8 A | 1 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 4A TS4K
- Diode Type: Single Phase
- Technology: Standard
- Voltage - Peak Reverse (Max): 600 V
- Current - Average Rectified (Io): 4 A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 4-SIP, TS4K
- Supplier Device Package: TS4K
|
Package: - |
Stock8,871 |
|
Standard | 600 V | 4 A | 1 V @ 2 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS4K | TS4K |