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GeneSiC Semiconductor |
DIODE SCHOTTKY 20V 200A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: Three Tower |
Stock5,536 |
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Schottky | 20V | 200A | 580mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 30V 200A 2 TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 200A
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 30V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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Package: Twin Tower |
Stock3,184 |
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Schottky | 30V | 200A | 580mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 30V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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Microsemi Corporation |
DIODE MODULE 1.2KV 120A D1
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 120A
- Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6mA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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Package: D1 |
Stock4,544 |
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Standard | 1200V | 120A | 1.43V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 6mA @ 1200V | - | Chassis Mount | D1 | D1 |
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Vishay Semiconductor Diodes Division |
DIODE GEN 1.6KV 125A MAGNAPAK
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io) (per Diode): 125A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50mA @ 1600V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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Package: INT-A-Pak |
Stock6,592 |
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Standard | 1600V | 125A | - | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1600V | -40°C ~ 150°C | Chassis Mount | INT-A-Pak | INT-A-PAK |
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GeneSiC Semiconductor |
DIODE GEN PURP 200V 150A 3 TOWER
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: Three Tower |
Stock5,424 |
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Standard | 200V | 150A | 1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 25µA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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SMC Diode Solutions |
DIODE SCHOTTKY 50V 150A PRM4
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io) (per Diode): 150A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 150A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 50V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Chassis Mount
- Package / Case: PRM4
- Supplier Device Package: PRM4 (Isolated)
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Package: PRM4 |
Stock3,440 |
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Schottky | 50V | 150A | 690mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 50V | -55°C ~ 175°C | Chassis Mount | PRM4 | PRM4 (Isolated) |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 50V 18A TO263AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io) (per Diode): 18A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature - Junction: -65°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,008 |
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Standard | 50V | 18A | 1.15V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 50V | -65°C ~ 150°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock6,944 |
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Schottky | 100V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 20A,
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Operating Temperature - Junction: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,096 |
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Standard | 30V | 20A | 550mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | -55°C ~ 125°C | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY GP 150V 5A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 150V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock3,696 |
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Standard | 150V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | -40°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
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Vishay Semiconductor Diodes Division |
DIODE ARRAY SCHOTTKY 40V DPAK
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io) (per Diode): 3.5A
- Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 40V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,752 |
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Schottky | 40V | 3.5A | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | 150°C (Max) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) |
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Littelfuse Inc. |
DIODE SCHOTTKY 200V 5A TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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Package: TO-220-3 |
Stock1,016,844 |
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Schottky | 200V | 5A | 980mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Through Hole | TO-220-3 | TO-220AB |
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Diodes Incorporated |
DIODE ARRAY SBR 100V 5A TO252-3
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 100V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-3
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock558,000 |
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Super Barrier | 100V | 5A | 840mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | -65°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3 |
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Toshiba Semiconductor and Storage |
DIODE ARRAY SCHOTTKY 10V USQ
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io) (per Diode): 100mA
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20µA @ 10V
- Operating Temperature - Junction: 125°C (Max)
- Mounting Type: Surface Mount
- Package / Case: SC-82
- Supplier Device Package: USQ
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Package: SC-82 |
Stock45,660 |
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Schottky | 10V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 20µA @ 10V | 125°C (Max) | Surface Mount | SC-82 | USQ |
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Panjit International Inc. |
DIODE ARRAY GP 200V 6A TO252
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 6A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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Package: - |
Stock8,970 |
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Standard | 200 V | 6A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | -55°C ~ 150°C | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 |
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onsemi |
DIODE SWITCH DUAL CA 80V SC59
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
DIODE MOD SCHOTT 200V 75A SOT227
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 75A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227 (ISOTOP®)
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Package: - |
Stock78 |
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Schottky | 200 V | 75A | 900 mV @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | -55°C ~ 150°C | Chassis Mount | SOT-227-4, miniBLOC | SOT-227 (ISOTOP®) |
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Microchip Technology |
DIODE ARRAY GP 75V 200MA UB
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io) (per Diode): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Operating Temperature - Junction: -65°C ~ 200°C
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
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Package: - |
Request a Quote |
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Standard | 75 V | 200mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | -65°C ~ 200°C | Surface Mount | 3-SMD, No Lead | UB |
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GeneSiC Semiconductor |
DIODE MODULE GP 1KV 500A 3TOWER
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io) (per Diode): 500A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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Package: - |
Request a Quote |
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Standard | 1000 V | 500A (DC) | 1.2 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 600 V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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Rohm Semiconductor |
DIODE ARRAY GP 80V 215MA SOT23
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 5 nA @ 75 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
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Package: - |
Stock8,166 |
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Standard | 80 V | 215mA (DC) | 1.25 V @ 150 mA | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 5 nA @ 75 V | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 |
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WeEn Semiconductors |
DIODE ARR SIC SCHOT 650V TO3PF
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Operating Temperature - Junction: 175°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PF
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Package: - |
Stock7,200 |
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SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 175°C | Through Hole | TO-3P-3, SC-65-3 | TO-3PF |
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Micro Commercial Co |
DIODE ARR SCHOT 80V 10A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 80 V
- Operating Temperature - Junction: -50°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Isolated Tab
- Supplier Device Package: ITO-220AB
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Package: - |
Request a Quote |
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Schottky | 80 V | 10A | - | No Recovery Time > 500mA (Io) | - | 100 µA @ 80 V | -50°C ~ 150°C | Through Hole | TO-220-3 Isolated Tab | ITO-220AB |
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onsemi |
DIODE SCHOTTKY 40V 15A
- Diode Configuration: -
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io) (per Diode): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Operating Temperature - Junction: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay General Semiconductor - Diodes Division |
DIODE ARR SCHOT 100V 40A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 40 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600 µA @ 100 V
- Operating Temperature - Junction: -40°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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Package: - |
Stock2,700 |
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Schottky | 100 V | 40A | 840 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 100 V | -40°C ~ 175°C | Through Hole | TO-247-3 | TO-247AD |
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Panjit International Inc. |
DIODE ARR SCHOT 150V 30A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 30A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Operating Temperature - Junction: -65°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (TO-3P)
|
Package: - |
Request a Quote |
|
Schottky | 150 V | 30A | 900 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | -65°C ~ 175°C | Through Hole | TO-247-3 | TO-247AD (TO-3P) |
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Diodes Incorporated |
DIODE ARRAY GP 600V 5A ITO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO220AB (Type WX2)
|
Package: - |
Request a Quote |
|
Standard | 600 V | 5A | 1.5 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | -55°C ~ 150°C | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO220AB (Type WX2) |
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Rohm Semiconductor |
DIODE ARR SCHOTT 30V 10A TO252
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 480 mV @ 4 A
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 30 V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
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Package: - |
Stock4,830 |
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Schottky | 30 V | 10A | 480 mV @ 4 A | - | - | 300 µA @ 30 V | 150°C (Max) | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 |
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Vishay General Semiconductor - Diodes Division |
DIODE ARR SCHOTT 45V 10A TO263AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2 mA @ 45 V
- Operating Temperature - Junction: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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Schottky | 45 V | 10A | 580 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2 mA @ 45 V | -40°C ~ 150°C | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB |
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