Page 101 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4248GP-M3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Package: -

Stock4,832
EGP30GHE3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A GP20

Package: DO-201AA, DO-27, Axial

Stock3,136
MUR5060R
GeneSiC Semiconductor

DIODE GEN PURP REV 600V 50A DO5

Package: DO-203AB, DO-5, Stud

Stock3,408
BYV29B-400-E3/81
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,648
P600K-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 6A P600

Package: P600, Axial

Stock6,480
SJPE-H3VR
Sanken

DIODE SCHOTTKY 30V 2A SMD

Package: 2-SMD, J-Lead

Stock6,592
RS3G-E3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Package: DO-214AB, SMC

Stock4,352
1F7TA
SMC Diode Solutions

DIODE GEN PURP 1KV 1A R-1

Package: R-1 (Axial)

Stock4,368
IDH05G120C5XKSA1
Infineon Technologies

DIODE SCHOTTKY 1.2KV 5A TO220-2

Package: TO-220-2

Stock7,872
SDUR540
SMC Diode Solutions

DIODE GEN PURP 400V TO220AC

Package: TO-220-2

Stock14,466
STTH208U
STMicroelectronics

DIODE GEN PURP 800V 2A SMB

Package: DO-214AA, SMB

Stock3,562,332
RBR2L40ATE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 2A PMDS

Package: DO-214AC, SMA

Stock5,264
1N4002G-T
Diodes Incorporated

DIODE GEN PURP 100V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock3,664
BAT54H,115
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA SOD123F

Package: SOD-123F

Stock282,324
MB3H60AH-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 60V 3A SOD123HE

Package: -

Stock84,843
VS-E5PX3012L-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 30A TO247AD

Package: -

Stock1,260
UJ3D1205TS
Qorvo

DIODE SIL CARB 1.2KV 5A TO220-2

Package: -

Stock108,705
DSEP29-06AS-TRL
IXYS

DIODE GEN PURP 600V 30A TO263AA

Package: -

Request a Quote
MER3DMA-AU_R2_006A1
Panjit International Inc.

DIODE GEN PURP 200V 3A SMA

Package: -

Stock40,665
BAS40L-G3-08
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 200MA DFN1006

Package: -

Stock16,554

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4248GP-M3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock4,832	-	-	-	-	-	-	-	-	-	-	-
EGP30GHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A GP20 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-201AA, DO-27, Axial	Stock3,136	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Through Hole	DO-201AA, DO-27, Axial	GP20	-65°C ~ 150°C
MUR5060R	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock3,408	600V	50A	1V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	90ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
BYV29B-400-E3/81	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,648	400V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-40°C ~ 150°C
P600K-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: P600, Axial	Stock6,480	800V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 800V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
SJPE-H3VR	Sanken	DIODE SCHOTTKY 30V 2A SMD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -40°C ~ 150°C	Package: 2-SMD, J-Lead	Stock6,592	30V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	2-SMD, J-Lead	2-SMD	-40°C ~ 150°C
RS3G-E3/9AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 44pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock4,352	400V	3A	1.3V @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 400V	44pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
1F7TA	SMC Diode Solutions	DIODE GEN PURP 1KV 1A R-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-1 (Axial) Supplier Device Package: R-1 Operating Temperature - Junction: -65°C ~ 150°C	Package: R-1 (Axial)	Stock4,368	1000V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	500ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	R-1 (Axial)	R-1	-65°C ~ 150°C
IDH05G120C5XKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 5A TO220-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 33µA @ 1200V Capacitance @ Vr, F: 301pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock7,872	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	33µA @ 1200V	301pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
SDUR540	SMC Diode Solutions	DIODE GEN PURP 400V TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.3V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 30µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock14,466	400V	-	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 400V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
STTH208U	STMicroelectronics	DIODE GEN PURP 800V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	Package: DO-214AA, SMB	Stock3,562,332	800V	2A	1.65V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
RBR2L40ATE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock5,264	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	80µA @ 40V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
1N4002G-T	Diodes Incorporated	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,664	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
BAT54H,115	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA SOD123F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 125°C (Max)	Package: SOD-123F	Stock282,324	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	125°C (Max)
MB3H60AH-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 60V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 60 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock84,843	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 60 V	150pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
VS-E5PX3012L-N3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,260	1200 V	30A	3.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
UJ3D1205TS	Qorvo	DIODE SIL CARB 1.2KV 5A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 55 µA @ 1200 V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock108,705	1200 V	5A	1.6 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 1200 V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
DSEP29-06AS-TRL	IXYS	DIODE GEN PURP 600V 30A TO263AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 250 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	600 V	30A	1.61 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	250 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AA	-55°C ~ 175°C
MER3DMA-AU_R2_006A1	Panjit International Inc.	DIODE GEN PURP 200V 3A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock40,665	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	31pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 175°C
BAS40L-G3-08	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 40V 200MA DFN1006 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 2.9pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: DFN1006-2A Operating Temperature - Junction: 150°C	Package: -	Stock16,554	40 V	200mA	1 V @ 40 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 40 V	2.9pF @ 0V, 1MHz	Surface Mount	0402 (1006 Metric)	DFN1006-2A	150°C
PUUP10J	Taiwan Semiconductor Corporation	25NS, 10A, 600V, ULTRA FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 2 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock17,895	600 V	10A	2 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	5 µA @ 600 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
PMEG3010BEP-QX	Nexperia USA Inc.	DIODE SCHOTTKY 30V 1A SOD128 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 30 V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C	Package: -	Request a Quote	30 V	1A	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	170pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	150°C
HSB88YPTR-E	Renesas Electronics Corporation	RECTIFIER DIODE, 0.015A, 10V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RB530SM-40T2R	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA EMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 710 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C	Package: -	Stock23,700	40 V	100mA	710 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	15 µA @ 40 V	-	Surface Mount	SC-79, SOD-523	EMD2	150°C
SL510B-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	5A	650 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MBR680_T0_00001	Panjit International Inc.	DIODE SCHOTTKY 80V 6A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	80 V	6A	800 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 80 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
TS4148-RBG	Taiwan Semiconductor Corporation	DIODE GEN PURP 75V 150MA 0805 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 5 µA @ 75 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	75 V	150mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	5 µA @ 75 V	4pF @ 0V, 1MHz	Surface Mount	0805 (2012 Metric)	0805	-55°C ~ 175°C
C6D05170H	Wolfspeed, Inc.	5A 1700V SIC, SCHOTTKY DIODE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 21A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 9 µA @ 1700 V Capacitance @ Vr, F: 638pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1700 V	21A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	9 µA @ 1700 V	638pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C