Page 1024 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4006GPE-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Package: -

Stock7,648
VS-1EFH02WHM3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A SMF

Package: DO-219AB

Stock5,440
SRP600D-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

Package: P600, Axial

Stock7,552
ESH1PAHE3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO220AA

Package: DO-220AA

Stock6,768
JANTXV1N6642UBCC
Microsemi Corporation

DIODE GEN PURP 75V 300MA UB

Package: 3-SMD, No Lead

Stock3,296
BYV30B-600PJ
WeEn Semiconductors

BYV30B-600PJ TO263

Package: -

Stock3,760
CMR1U-04M BK
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMA

Package: DO-214AC, SMA

Stock5,440
BYV29X-500,127
WeEn Semiconductors

DIODE GEN PURP 500V 9A TO220F

Package: TO-220-2 Full Pack, Isolated Tab

Stock4,640
CD214B-F2400
Bourns Inc.

DIODE GEN PURP 400V 2A DO214AA

Package: DO-214AA, SMB

Stock4,944
SE20PBHM3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.6A DO220AA

Package: DO-220AA

Stock7,312
JANTX1N4946
Microsemi Corporation

DIODE GEN PURP 600V 1A AXIAL

Package: A, Axial

Stock6,944
LS4448GS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 300MA SOD80

Package: SOD-80 Variant

Stock99,366
CDBA140SL-HF
Comchip Technology

DIODE SCHOTTKY 40V 1A DO214AC

Package: DO-214AC, SMA

Stock226,122
CR40-080
Central Semiconductor Corp

DIODE GEN PURP 800V 40A DO203AB

Package: -

Request a Quote
SR545L-AP
Micro Commercial Co

Interface

Package: -

Request a Quote
RBLQ10RSM10TFTL1
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 10A,

Package: -

Request a Quote
SF3008PTH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 30A TO247AD

Package: -

Stock2,064
BA158BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 600V 1A DO41

Package: -

Request a Quote
10A05
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 600V 10A D6

Package: -

Request a Quote
PMEG100T10ELXDX
Nexperia USA Inc.

DIODE SCHOTTKY 100V 1A SOD323HP

Package: -

Stock124,122

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4006GPE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock7,648	-	-	-	-	-	-	-	-	-	-	-
VS-1EFH02WHM3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A SMF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 16ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: SMF (DO-219AB) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-219AB	Stock5,440	200V	1A	930mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	16ns	2µA @ 200V	-	Surface Mount	DO-219AB	SMF (DO-219AB)	-65°C ~ 175°C
SRP600D-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 125°C	Package: P600, Axial	Stock7,552	200V	6A	1.3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 200V	-	Through Hole	P600, Axial	P600	-50°C ~ 125°C
ESH1PAHE3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock6,768	50V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
JANTXV1N6642UBCC	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: 3-UB (3.09x2.45) Operating Temperature - Junction: -65°C ~ 175°C	Package: 3-SMD, No Lead	Stock3,296	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	-	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
BYV30B-600PJ	WeEn Semiconductors	BYV30B-600PJ TO263 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,760	-	-	-	-	-	-	-	-	-	-	-
CMR1U-04M BK	Central Semiconductor Corp	DIODE GEN PURP 400V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock5,440	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
BYV29X-500,127	WeEn Semiconductors	DIODE GEN PURP 500V 9A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 50µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2 Full Pack, Isolated Tab	Stock4,640	500V	9A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	50µA @ 500V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
CD214B-F2400	Bourns Inc.	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock4,944	400V	2A	1.25V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	200pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SE20PBHM3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1.6A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock7,312	100V	1.6A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	1.2µs	5µA @ 100V	13pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
JANTX1N4946	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock6,944	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
LS4448GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 300MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	Package: SOD-80 Variant	Stock99,366	100V	300mA	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	25nA @ 20V	4pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
CDBA140SL-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1.4A (DC) Voltage - Forward (Vf) (Max) @ If: 330mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 100°C	Package: DO-214AC, SMA	Stock226,122	40V	1.4A (DC)	330mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	160pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 100°C
CR40-080	Central Semiconductor Corp	DIODE GEN PURP 800V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -	Package: -	Request a Quote	800 V	40A	1.1 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-
SR545L-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: 320pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	5A	490 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 45 V	320pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RBLQ10RSM10TFTL1	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 10A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A Operating Temperature - Junction: 150°C	Package: -	Request a Quote	100 V	10A	670 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A	150°C
SF3008PTH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 175pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock2,064	600 V	30A	1.7 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
BA158BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 600 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
10A05	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 600V 10A D6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: D-6, Axial Supplier Device Package: D6 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	10A	1 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	80pF @ 4V, 1MHz	Through Hole	D-6, Axial	D6	-65°C ~ 150°C
PMEG100T10ELXDX	Nexperia USA Inc.	DIODE SCHOTTKY 100V 1A SOD323HP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 500 nA @ 100 V Capacitance @ Vr, F: 95pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C	Package: -	Stock124,122	100 V	1A	795 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 100 V	95pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD323HP	175°C
FR303BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	200 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
15SQ045-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 480 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 200°C	Package: -	Request a Quote	45 V	15A	480 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 200°C
US2DBFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	200 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	-	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-50°C ~ 150°C
JANTXV1N5416US-TR	Microchip Technology	DIODE GEN PURP 100V 3A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
V10P22HM3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 3.1A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3.1A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 200 V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock20,253	200 V	3.1A	900 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 200 V	500pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
GS2AFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 µA @ 50 V	20pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
UF1006F_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 10A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock5,880	600 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	1 µA @ 600 V	50pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 150°C
1N4004T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C