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Micro Commercial Co |
DIODE GEN PURP 50V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock4,560 |
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50V | 1A (DC) | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Vishay Semiconductor Diodes Division |
DIODE SW 1A 800V 500NS DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,072 |
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800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO220AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock3,200 |
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200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A P600
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 300pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: P600, Axial |
Stock3,680 |
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200V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 200V | 300pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Panasonic Electronic Components |
DIODE GEN PURP 6V 100MA DO34
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 6V
- Current - Average Rectified (Io): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 3mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 6V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AG, DO-34, Axial
- Supplier Device Package: DO-34
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-204AG, DO-34, Axial |
Stock3,264 |
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6V | 100mA (DC) | 1.28V @ 3mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 6V | - | Through Hole | DO-204AG, DO-34, Axial | DO-34 | 150°C (Max) |
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Powerex Inc. |
DIODE STUD MNT 240A 400V DO-9
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock7,872 |
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- | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 95A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 95A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock4,960 |
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800V | 95A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE UFAST 100V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,824 |
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100V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 30V 2A SJP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: SJP
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock2,640 |
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30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,640 |
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20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 50V, 150NS, A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,648 |
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50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock4,416 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 154ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock18,312 |
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600V | 6A | 1.25V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.9V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 60µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock47,076 |
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600V | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 60µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Rohm Semiconductor |
DIODE SCHOTTKY 5V 10MA VMN2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 5V
- Current - Average Rectified (Io): 10mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120µA @ 5V
- Capacitance @ Vr, F: 0.8pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: VMN2
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, Flat Lead |
Stock6,368 |
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5V | 10mA (DC) | 350mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 120µA @ 5V | 0.8pF @ 1V, 1MHz | Surface Mount | 2-SMD, Flat Lead | VMN2 | 125°C (Max) |
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Comchip Technology |
DIODE SCHOTTKY 20V 500MA 0603
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 20V
- Capacitance @ Vr, F: 100pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 0603/SOD-523F
- Operating Temperature - Junction: 125°C (Max)
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Package: 2-SMD, No Lead |
Stock5,712 |
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20V | 500mA | 470mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | 100pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603/SOD-523F | 125°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 400V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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SMC Diode Solutions |
600V, 3A, SMB, ULTRA FAST RECOVE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock8,700 |
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600 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 600 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 175°C |
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Littelfuse Inc. |
DIODE SIL CARB 650V 38A TO220-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 38A
- Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 730pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock2,526 |
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650 V | 38A | 1.8 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 5A | 950 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 120 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 10A | 750 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120 µA @ 100 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Panjit International Inc. |
60V, SCHOTTKY, TO-277C, 5A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 60 V
- Capacitance @ Vr, F: 250pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277C
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock30,000 |
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60 V | 5A | 750 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 60 V | 250pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277C | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 30V 3A SMAF-C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 485pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF-C
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock7,461 |
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30 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 485pF @ 0V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
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onsemi |
DIODE SIL CARBIDE 650V 11A DPAK
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 650 V
- Capacitance @ Vr, F: 361pF @ 1V, 100kHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252 (DPAK)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock7,500 |
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650 V | 11A | 1.75 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 361pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK) | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 1200V 8A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 95 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
1200 V | 8A | 4.3 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | 95 ns | 10 µA @ 1200 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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EIC SEMICONDUCTOR INC. |
DIODE GEN PURP 1KV 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 10 µA @ 1000 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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Microchip Technology |
SMALL-SIGNAL SCHOTTKY
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 16 V
- Current - Average Rectified (Io): 75mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 nA @ 16 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: UB
- Operating Temperature - Junction: -65°C ~ 150°C
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16 V | 75mA | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | Surface Mount | 3-SMD, No Lead | UB | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 800V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.8 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 26pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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800 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2.8 µs | 10 µA @ 800 V | 26pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |