Page 1046 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RFN10B3STL
Rohm Semiconductor

DIODE GEN PURP 350V 10A CPD

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock5,536
FES16FT
Fairchild/ON Semiconductor

DIODE GEN PURP 300V 16A TO220AC

Package: TO-220-2

Stock5,200
VS-MBR1100
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,096
10ETS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 10A TO220AC

Package: TO-220-2

Stock59,028
D1381S45T
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE FAST 4500V 1380A

Package: -

Stock3,536
VS-VSKE71/10
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 80A ADDAPAK

Package: ADD-A-PAK (3)

Stock3,488
VS-6FR20M
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 6A DO203AA

Package: DO-203AA, DO-4, Stud

Stock2,864
HSM830G/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 8A DO215AB

Package: DO-215AB, SMC Gull Wing

Stock6,880
HT17G R0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Package: T-18, Axial

Stock7,104
RS2BAHM2G
TSC America Inc.

DIODE, FAST, 1.5A, 100V, 150NS,

Package: DO-214AC, SMA

Stock4,144
SBRT25U60SLP-13
Diodes Incorporated

DIODE SBR 60V 25A POWERDI5060-8

Package: 8-PowerTDFN

Stock292,764
VS-HFA04TB60-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A TO220AC

Package: TO-220-2

Stock23,328
PMEG6010CEJ-QF
Nexperia USA Inc.

PMEG6010CEJ-Q/SOD323F/SOD323F

Package: -

Request a Quote
VS-45EPF12L-M3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 45A TO247AD

Package: -

Request a Quote
PNE20010ER-QX
Nexperia USA Inc.

HYPERFAST/ULTRAFAST RECOVERY REC

Package: -

Stock7,608
S50420IL
Microchip Technology

STD RECTIFIER

Package: -

Request a Quote
SS14Q-LTP
Micro Commercial Co

SCHOTTKY BARRIER RECTIFIERS 40V

Package: -

Stock29,730
JANHCE1N5806
Microchip Technology

DIODE GEN PURP 150V 1A DIE

Package: -

Request a Quote
B330BE-13
Diodes Incorporated

DIODE SCHOTTKY 30V 3A SMB

Package: -

Request a Quote
BAS116-13P
Micro Commercial Co

GENERAL PURPOSE - DIODES

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RFN10B3STL	Rohm Semiconductor	DIODE GEN PURP 350V 10A CPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 350V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: CPD Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock5,536	350V	10A	1.5V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 350V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	CPD	150°C (Max)
FES16FT	Fairchild/ON Semiconductor	DIODE GEN PURP 300V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-220-2	Stock5,200	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	170pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
VS-MBR1100	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 850mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 35pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock2,096	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	35pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-40°C ~ 150°C
10ETS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 10A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-2	Stock59,028	800V	10A	1.1V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 800V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 150°C
D1381S45T	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE FAST 4500V 1380A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock3,536	-	-	-	-	-	-	-	-	-	-	-
VS-VSKE71/10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 80A ADDAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (3) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	Package: ADD-A-PAK (3)	Stock3,488	1000V	80A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 1000V	-	Chassis Mount	ADD-A-PAK (3)	ADD-A-PAK?	-40°C ~ 150°C
VS-6FR20M	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 6A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 19A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-203AA, DO-4, Stud	Stock2,864	1000V	6A	1.1V @ 19A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 175°C
HSM830G/TR13	Microsemi Corporation	DIODE SCHOTTKY 30V 8A DO215AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 620mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AB, SMC Gull Wing	Stock6,880	30V	8A	620mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 30V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
HT17G R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock7,104	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
RS2BAHM2G	TSC America Inc.	DIODE, FAST, 1.5A, 100V, 150NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock4,144	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SBRT25U60SLP-13	Diodes Incorporated	DIODE SBR 60V 25A POWERDI5060-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 550mV @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerDI5060-8 Operating Temperature - Junction: -55°C ~ 150°C	Package: 8-PowerTDFN	Stock292,764	60V	25A	550mV @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	8-PowerTDFN	PowerDI5060-8	-55°C ~ 150°C
VS-HFA04TB60-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42ns Current - Reverse Leakage @ Vr: 3µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock23,328	600V	4A	1.8V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
PMEG6010CEJ-QF	Nexperia USA Inc.	PMEG6010CEJ-Q/SOD323F/SOD323F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 660 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: 60pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C	Package: -	Request a Quote	60 V	1A	660 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	60pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C
VS-45EPF12L-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.2KV 45A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.44 V @ 45 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	1200 V	45A	1.44 V @ 45 A	Fast Recovery =< 500ns, > 200mA (Io)	450 ns	100 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-40°C ~ 150°C
PNE20010ER-QX	Nexperia USA Inc.	HYPERFAST/ULTRAFAST RECOVERY REC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 200 nA @ 200 V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	Package: -	Stock7,608	200 V	1A	930 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	200 nA @ 200 V	17pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
S50420IL	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS14Q-LTP	Micro Commercial Co	SCHOTTKY BARRIER RECTIFIERS 40V Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 95pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock29,730	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	95pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
JANHCE1N5806	Microchip Technology	DIODE GEN PURP 150V 1A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	Die	Die	-65°C ~ 175°C
B330BE-13	Diodes Incorporated	DIODE SCHOTTKY 30V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 140pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	30 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	140pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
BAS116-13P	Micro Commercial Co	GENERAL PURPOSE - DIODES Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	5 nA @ 75 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
JANTX1N5551US-TR	Microchip Technology	DIODE GEN PURP 400V 5A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
FR104GP-AP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
1N4148W-HG3_A-18	Vishay	SWITCHING DIODE GENPURP SOD123 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MB55_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 50V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 740 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	5A	740 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 50 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 175°C
RB550ASA-30FHT2RB	Rohm Semiconductor	LOW VF, 30V, 500MA, DFN1006-2W, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 590 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: SOD-882 Supplier Device Package: DFN1006-2W Operating Temperature - Junction: 150°C	Package: -	Stock23,940	30 V	500mA	590 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 30 V	-	Surface Mount, Wettable Flank	SOD-882	DFN1006-2W	150°C
CGRB202-HF	Comchip Technology	DIODE GEN PURP 100V 2A DO214AA S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
SE40ND-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 4A DFN3820A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 24pF @ 4V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock42,900	200 V	4A	1.1 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 200 V	24pF @ 4V, 1MHz	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-55°C ~ 175°C
GP10GE-124E3-91	Vishay General Semiconductor - Diodes Division	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-