Page 1053 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SIDC42D120E6
Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Package: Die

Stock2,416
SS35HE-TP
Micro Commercial Co

DIODE SCHOTTKY 50V 3A SOD123HE

Package: SOD-123H

Stock6,816
VS-8TQ080GSPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,992
VS-150SQ045
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 15A DO204AR

Package: DO-204AR, Axial

Stock6,288
GL34A-TP
Micro Commercial Co

DIODE GEN 50V 500MA MINI MELF

Package: DO-213AC, MINI-MELF, SOD-80

Stock2,384
JANTXV1N4245
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Package: A, Axial

Stock7,504
V8PM12-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.6A TO277A

Package: TO-277, 3-PowerDFN

Stock2,960
BYM07-50HE3/83
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Package: DO-213AA (Glass)

Stock3,280
B120AE-13
Diodes Incorporated

SCHOTTKY RECTIFIER SMA

Package: DO-214AC, SMA

Stock3,952
MMBD6050-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 200MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock5,328
SE10PD-M3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Package: DO-220AA

Stock72,000
RBR3L40ATE25
Rohm Semiconductor

DIODE SCHOTTKY 40V 3A PMDS

Package: DO-214AC, SMA

Stock6,656
SK520TR
SMC Diode Solutions

DIODE SCHOTTKY 200V 5A SMC

Package: DO-214AB, SMC

Stock3,360
US1M-13-F
Diodes Incorporated

DIODE GEN PURP 1KV 1A SMA

Package: DO-214AC, SMA

Stock1,023,768
UFR7140
Microchip Technology

DIODE GEN PURP 400V DO5

Package: -

Request a Quote
RBLQ20BGE10TL
Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 20A,

Package: -

Request a Quote
CS2J-E3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 2A DO214AA

Package: -

Request a Quote
MBR8170TFSTAG
onsemi

DIODE SCHOTTKY 170V 8A 8WDFN

Package: -

Stock4,470
PU1DLS
Taiwan Semiconductor Corporation

25NS, 1A, 200V, ULTRA FAST RECOV

Package: -

Stock60,000
JANTXV1N6873UTK2CS-TR
Microchip Technology

POWER SCHOTTKY

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC42D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	Package: Die	Stock2,416	1200V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SS35HE-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock6,816	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
VS-8TQ080GSPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 80V 8A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 180°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,992	80V	8A	720mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	500pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 180°C
VS-150SQ045	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 15A DO204AR Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 540mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 45V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AR, Axial Supplier Device Package: DO-204AR Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AR, Axial	Stock6,288	45V	15A	540mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 45V	900pF @ 5V, 1MHz	Through Hole	DO-204AR, Axial	DO-204AR	-55°C ~ 150°C
GL34A-TP	Micro Commercial Co	DIODE GEN 50V 500MA MINI MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AC, MINI-MELF, SOD-80	Stock2,384	50V	500mA	1.2V @ 500mA	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	-	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 175°C
JANTXV1N4245	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock7,504	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
V8PM12-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 3.6A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 3.6A (DC) Voltage - Forward (Vf) (Max) @ If: 620mV @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock2,960	120V	3.6A (DC)	620mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
BYM07-50HE3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock3,280	50V	500mA	1.25V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
B120AE-13	Diodes Incorporated	SCHOTTKY RECTIFIER SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock3,952	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
MMBD6050-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 70V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock5,328	70V	200mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	150°C (Max)
SE10PD-M3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock72,000	200V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 200V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
RBR3L40ATE25	Rohm Semiconductor	DIODE SCHOTTKY 40V 3A PMDS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 690mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock6,656	40V	3A	690mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 40V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
SK520TR	SMC Diode Solutions	DIODE SCHOTTKY 200V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,360	200V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
US1M-13-F	Diodes Incorporated	DIODE GEN PURP 1KV 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock1,023,768	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
UFR7140	Microchip Technology	DIODE GEN PURP 400V DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 25 µA @ 400 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	-	1.25 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 400 V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
RBLQ20BGE10TL	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252GE Operating Temperature - Junction: 150°C	Package: -	Request a Quote	100 V	20A	860 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252GE	150°C
CS2J-E3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.2 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	2.1 µs	5 µA @ 600 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
MBR8170TFSTAG	onsemi	DIODE SCHOTTKY 170V 8A 8WDFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 170 V Capacitance @ Vr, F: 237pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-WDFN (3.3x3.3) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,470	170 V	8A	890 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 170 V	237pF @ 1V, 1MHz	Surface Mount	8-PowerWDFN	8-WDFN (3.3x3.3)	-55°C ~ 175°C
PU1DLS	Taiwan Semiconductor Corporation	25NS, 1A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock60,000	200 V	1A	930 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	19pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
JANTXV1N6873UTK2CS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
EAL1B	Diotec Semiconductor	DIODE SUPERFAST MINIMELF 100V Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 3 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA, MINI-MELF Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	100 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 100 V	-	Surface Mount	DO-213AA	DO-213AA, MINI-MELF	-50°C ~ 175°C
1N5188US-TR	Microchip Technology	DIODE GEN PURP 400V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 2 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	2 µA @ 400 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
DMA10P1200UZ-TRL	IXYS	DIODE GEN PURP 1.2KV 10A TO252AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 1pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock6,519	1200 V	10A	1.55 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	1pF @ 400V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
JANTX1N3595US-TR	Microchip Technology	DIODE GEN PURP 200MA B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 1 nA @ 125 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	-	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	3 µs	1 nA @ 125 V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
NTSB40120CTT4G	onsemi	RECTIFIER DIODE, SCHOTTKY, 1 PHA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6638U-TR	Microchip Technology	DIODE GP 150V 300MA SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4.5 ns Current - Reverse Leakage @ Vr: 500 nA @ 125 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	150 V	300mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5 ns	500 nA @ 125 V	2pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 200°C
MBR90L200WT	SMC Diode Solutions	200V, 90A, TO-247AD, DIODE SCHOT Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock900	-	-	-	-	-	-	-	-	-	-	-
GATELEAD28134XPSA1	Infineon Technologies	DUMMY 57 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-