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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY ITO-220AC
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,184 |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock6,656 |
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200V | 1A (DC) | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,720 |
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35V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -65°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,032 |
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50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE FAST 4500V 1710A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,992 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 1.2KV 430A D200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 430A
- Voltage - Forward (Vf) (Max) @ If: 1.83V @ 1350A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 35mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, PUK
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock4,336 |
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1200V | 430A | 1.83V @ 1350A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 35mA @ 1200V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, PUK | - |
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GeneSiC Semiconductor |
DIODE GEN REV 600V 25A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock3,264 |
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600V | 25A | 1.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | - | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE INPUT 60A 400V TO-247
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 85ns
- Current - Reverse Leakage @ Vr: 50µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC Modified
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock6,608 |
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400V | 60A | 1.25V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A DPAK
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,568 |
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- | - | - | - | - | - | - | - | - | - | - |
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Comchip Technology |
DIODE SCHOTTKY 30V 200MA 1005
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 10V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1005 (2512 Metric)
- Supplier Device Package: 1005/SOD-323F
- Operating Temperature - Junction: 125°C (Max)
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Package: 1005 (2512 Metric) |
Stock3,024 |
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30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | - | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
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TSC America Inc. |
DIODE, 1A, 1000V, AEC-Q101, SUB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-219AB |
Stock6,768 |
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- | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 1000V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-219AB |
Stock5,664 |
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40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 1A SOD123FA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123FA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SOD-123W |
Stock7,792 |
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600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123FA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 1.5A, 400V, SOD-123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD123W
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-123W |
Stock6,192 |
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400V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO220FP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220-2 Full Pack
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 Full Pack |
Stock22,356 |
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600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 20V 3A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (HSMA)
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: DO-214AC, SMA |
Stock120,000 |
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20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 3A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AA, SMB |
Stock36,000 |
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400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AC, SMA |
Stock97,200 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock26,760 |
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800V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 18µs | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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NTE Electronics, Inc |
DIODE GEN PURP 600V 500A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 500 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA
- Operating Temperature - Junction: -30°C ~ 190°C
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Package: - |
Request a Quote |
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600 V | 500A | 1.4 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 600 V | - | Clamp On | DO-200AA, A-PUK | DO-200AA | -30°C ~ 190°C |
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NTE Electronics, Inc |
DIODE GEN PURP 600V 15A TOP3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TOP-3
- Supplier Device Package: TOP3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 15A | 1.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | Through Hole | TOP-3 | TOP3 | -65°C ~ 175°C |
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Powerex Inc. |
DIODE GP REV 800V 150A DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 7 µs
- Current - Reverse Leakage @ Vr: 30 mA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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800 V | 150A | - | Standard Recovery >500ns, > 200mA (Io) | 7 µs | 30 mA @ 800 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
SOD-323F, 90V, 0.25A, SWITCHING
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 80 V
- Capacitance @ Vr, F: 4pF @ 500mV, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SOD-323F
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock29,940 |
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80 V | 150mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 80 V | 4pF @ 500mV, 1MHz | Surface Mount | SC-90, SOD-323F | SOD-323F | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 6A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 3.9 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1200 V | 6A | 3.9 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 5 µA @ 1200 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 5A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 5A | 1.35 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 50 V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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onsemi |
1200V/75A GEN7 FRD HS SAWN-ON-FO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 75 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 281.6 ns
- Current - Reverse Leakage @ Vr: 24.6 A @ 1.2 kA
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
1200 V | 75A | 1.9 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 281.6 ns | 24.6 A @ 1.2 kA | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 2A DO204AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 50 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 300V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 300 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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300 V | 2A | 1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 300 V | 50pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |