Page 1075 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4004-N-2-2-BP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock3,072
VS-HFA08SD60SPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock12,840
BYD33DGP-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock3,664
SR1203HB0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 12A,

Package: DO-201AD, Axial

Stock7,312
V8P45-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.3A TO277A

Package: TO-277, 3-PowerDFN

Stock6,528
BYM13-30HE3/97
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A DO213AB

Package: DO-213AB, MELF

Stock4,928
BAT43-TR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock2,400
SS310 R7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

Package: DO-214AB, SMC

Stock3,056
RSFML R3G
TSC America Inc.

DIODE, FAST, 0.5A, 1000V, 500NS,

Package: DO-219AB

Stock6,192
RF1501NS3STL
Rohm Semiconductor

DIODE GEN PURP 300V 20A LPDS

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock20,400
PMEG2015EV,115
Nexperia USA Inc.

DIODE SCHOTTKY 20V 1.5A SOT666

Package: SOT-563, SOT-666

Stock4,320
RF505BM6STL
Rohm Semiconductor

DIODE GEN PURP 600V 5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock2,704
GI751-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 6A P600

Package: P600, Axial

Stock4,896
RB160M-50TR
Rohm Semiconductor

DIODE SCHOTTKY 30V 1A SOD123W

Package: -

Stock3,488
SDM02U30CSP-7
Diodes Incorporated

DIODE SCHOTTKY X3-WLB0603-2

Package: 2-SMD, No Lead

Stock89,610
BAT46W-7-F
Diodes Incorporated

DIODE SCHOTTKY 100V 150MA SOD123

Package: SOD-123

Stock1,362,600
1N3742
Microchip Technology

DIODE GP 1KV 275A DO205AB DO9

Package: -

Request a Quote
S4310TS
Microchip Technology

DIODE GEN PURP 100V 150A DO205AA

Package: -

Request a Quote
D170S25BS1XPSA1
Infineon Technologies

DIODE GP 2.5KV 255A DSW271-1

Package: -

Request a Quote
JAN1N5623-TR
Microchip Technology

DIODE GEN PURP 1KV 1A

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4004-N-2-2-BP	Micro Commercial Co	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -	Package: DO-204AL, DO-41, Axial	Stock3,072	400V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-
VS-HFA08SD60SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock12,840	600V	8A (DC)	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-55°C ~ 150°C
BYD33DGP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock3,664	200V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	150ns	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SR1203HB0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 12A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 550mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-201AD, Axial	Stock7,312	30V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
V8P45-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 4.3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 4.3A Voltage - Forward (Vf) (Max) @ If: 580mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock6,528	45V	4.3A	580mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
BYM13-30HE3/97	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-213AB, MELF	Stock4,928	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
BAT43-TR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 200MA DO35 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 25V Capacitance @ Vr, F: 7pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 125°C (Max)	Package: DO-204AH, DO-35, Axial	Stock2,400	30V	200mA (DC)	450mV @ 15mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	125°C (Max)
SS310 R7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock3,056	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
RSFML R3G	TSC America Inc.	DIODE, FAST, 0.5A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,192	1000V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RF1501NS3STL	Rohm Semiconductor	DIODE GEN PURP 300V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C (Max)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock20,400	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 300V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	LPDS	150°C (Max)
PMEG2015EV,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1.5A SOT666 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 660mV @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 15V Capacitance @ Vr, F: 25pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666 Operating Temperature - Junction: 150°C (Max)	Package: SOT-563, SOT-666	Stock4,320	20V	1.5A (DC)	660mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 15V	25pF @ 5V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-666	150°C (Max)
RF505BM6STL	Rohm Semiconductor	DIODE GEN PURP 600V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock2,704	600V	5A	1.7V @ 5A	Standard Recovery >500ns, > 200mA (Io)	30ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
GI751-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 6A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 900mV @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C	Package: P600, Axial	Stock4,896	100V	6A	900mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	2.5µs	5µA @ 100V	150pF @ 4V, 1MHz	Through Hole	P600, Axial	P600	-50°C ~ 150°C
RB160M-50TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 360mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 30V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: 150°C (Max)	Package: -	Stock3,488	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	170pF @ 1V, 1MHz	-	-	-	150°C (Max)
SDM02U30CSP-7	Diodes Incorporated	DIODE SCHOTTKY X3-WLB0603-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 9pF @ 0.5V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: X3-WLB0603-2 Operating Temperature - Junction: -55°C ~ 150°C	Package: 2-SMD, No Lead	Stock89,610	30V	200mA	500mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	9pF @ 0.5V, 1MHz	Surface Mount	2-SMD, No Lead	X3-WLB0603-2	-55°C ~ 150°C
BAT46W-7-F	Diodes Incorporated	DIODE SCHOTTKY 100V 150MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2µA @ 75V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-123	Stock1,362,600	100V	150mA (DC)	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	2µA @ 75V	20pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
1N3742	Microchip Technology	DIODE GP 1KV 275A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 275A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 190°C	Package: -	Request a Quote	1000 V	275A	1.3 V @ 300 A	Standard Recovery >500ns, > 200mA (Io)	-	75 µA @ 1000 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 190°C
S4310TS	Microchip Technology	DIODE GEN PURP 100V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	100 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 100 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
D170S25BS1XPSA1	Infineon Technologies	DIODE GP 2.5KV 255A DSW271-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500 V Current - Average Rectified (Io): 255A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 800 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Current - Reverse Leakage @ Vr: 5 mA @ 2500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: Stud Supplier Device Package: BG-DSW271-1 Operating Temperature - Junction: 140°C (Max)	Package: -	Request a Quote	2500 V	255A	2.3 V @ 800 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	5 mA @ 2500 V	-	Stud Mount	Stud	BG-DSW271-1	140°C (Max)
JAN1N5623-TR	Microchip Technology	DIODE GEN PURP 1KV 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 500 nA @ 1 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	500 nA @ 1 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
VS-E5TX3006THN3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 41 ns Current - Reverse Leakage @ Vr: 20 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,422	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	41 ns	20 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
STTH2R02AY	STMicroelectronics	DIODE GEN PURP 200V 2A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: 175°C	Package: -	Stock44,286	200 V	2A	1.04 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	2.5 µA @ 200 V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	175°C
1N3649R	Microchip Technology	DIODE GEN PURP 800V DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	800 V	-	2.2 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
UTR22	Microchip Technology	DIODE GEN PURP 200V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 3 µA @ 200 V Capacitance @ Vr, F: 80pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	3 µA @ 200 V	80pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
SBM345VMS_AY_00001	Panjit International Inc.	DIODE SCHOTTKY 45V 3A DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	3A	470 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 45 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
GS1JAFC_R1_00001	Panjit International Inc.	DIODE GEN PURP 600V 1A SMAF-C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,670	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
JAN1N6075-TR	Microchip Technology	DIODE GEN PURP 150V 3A A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 9.4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 1 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C	Package: -	Request a Quote	150 V	3A	2.04 V @ 9.4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	1 µA @ 150 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 155°C
SR10100L-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: 700pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	10A	750 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 100 V	700pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C