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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7.5A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,368 |
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45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80ns
- Current - Reverse Leakage @ Vr: 35µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock6,576 |
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200V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 35µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Panasonic Electronic Components |
DIODE SCHOTTKY 30V 1.5A NMINIP2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 370mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 3mA @ 30V
- Capacitance @ Vr, F: 90pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: NMiniP2-J1
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-214BA |
Stock18,000 |
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30V | 1.5A | 370mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 3mA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | DO-214BA | NMiniP2-J1 | -40°C ~ 125°C |
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Powerex Inc. |
DIODE MODULE 1.6KV 500A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 2.25V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 50mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock4,000 |
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1600V | 500A | 2.25V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 1600V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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SMC Diode Solutions |
DIODE SCHOTTKY 150V 180A PRM1-1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 180A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 180A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5mA @ 150V
- Capacitance @ Vr, F: 4500pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: HALF-PAK
- Supplier Device Package: PRM1-1 (Half Pak Module)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: HALF-PAK |
Stock5,456 |
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150V | 180A | 1.07V @ 180A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5mA @ 150V | 4500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 16A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock3,856 |
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100V | 16A | 920mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE ULTRAFAST 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 36µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,336 |
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600V | 15A | 3.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 36µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1000V 1A DO220AA
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 1µA @ 1000V
- Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock4,816 |
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1000V | 1A | 1.85V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 1000V | 7.5pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock2,224 |
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400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 30V 1A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA, HSMB
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AA, SMB |
Stock3,568 |
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30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 125°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 200V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock5,376 |
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200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 12A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 240A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock6,368 |
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200V | 12A | 2.3V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 200V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock18,576 |
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100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock379,188 |
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200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 500MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 30 V
- Capacitance @ Vr, F: 125pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 500mA | 550 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 30 V | 125pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE SCHOTTKY 30V 8A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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30 V | 8A | 550 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 30 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 125°C |
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Renesas Electronics Corporation |
DIODE FOR HIGH SPEED SWITCHING
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
DIODE SCHOTTKY 3A DO-201AD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 100V 10A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 10A | 770 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5 µA @ 100 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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Infineon Technologies |
DIODE GP 600V 10450A D-ELEM-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10450A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 6000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 mA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Clamp On
- Package / Case: DO-200AC, K-PUK
- Supplier Device Package: BG-D-ELEM-1
- Operating Temperature - Junction: 180°C (Max)
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Package: - |
Stock15 |
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600 V | 10450A | 980 mV @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 600 V | - | Clamp On | DO-200AC, K-PUK | BG-D-ELEM-1 | 180°C (Max) |
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Panjit International Inc. |
DIODE SCHOTTKY 80V 15A TO277
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 720 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 80 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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80 V | 15A | 720 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 80 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock16,929 |
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150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 150 V | - | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 600V 6A R-6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
600 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 10 µA @ 600 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 300V 8A TO262AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 20 µA @ 300 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package: TO-262AA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
300 V | 8A | 1.25 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 20 µA @ 300 V | - | Through Hole | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-262AA | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
|
400 V | 3A | 1.27 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | 30pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 100V 3A SMBF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock4,500 |
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100 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 50pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1.2KV 60A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 60 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 130 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
- Capacitance @ Vr, F: 170pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock4,395 |
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1200 V | 60A | 3.3 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 130 ns | 5 µA @ 1200 V | 170pF @ 4V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
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IXYS |
FAST DIODE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
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