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Microsemi Corporation |
DIODE GEN PURP 1KV 35A DO203AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AB, DO-5, Stud |
Stock7,760 |
|
1000V | 35A | 2.3V @ 500A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 35V 16A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 |
Stock96,180 |
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35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 70A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 9mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock2,640 |
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1200V | 70A | 1.35V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 1200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.4KV 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock7,136 |
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1400V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 25A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 25A
- Voltage - Forward (Vf) (Max) @ If: 1.14V @ 25A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,968 |
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800V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 20A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock2,240 |
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90V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 8A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-214AB, SMC |
Stock7,456 |
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20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock6,112 |
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1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,328 |
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75V | 250mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Diodes Incorporated |
SCHOTTKY DIODE X1-DFN1006-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 575mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3ns
- Current - Reverse Leakage @ Vr: 150nA @ 30V
- Capacitance @ Vr, F: 20pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-UFDFN
- Supplier Device Package: X1-DFN1006-2
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: 2-UFDFN |
Stock7,888 |
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30V | 200mA (DC) | 575mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 150nA @ 30V | 20pF @ 0V, 1MHz | Surface Mount | 2-UFDFN | X1-DFN1006-2 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock2,048 |
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600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 500V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 500V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,744 |
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500V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 1A, 200V, 200NS, DO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock3,008 |
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200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock1,709,388 |
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100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 1A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 2µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock468,060 |
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200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE GEN PURP 200V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 200V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock22,980 |
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200V | 200mA | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 5µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock7,224 |
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600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 80 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
|
1200 V | 30A | 3.3 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 50 µA @ 1200 V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP REV 50V 150A DO8
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-8
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
|
50 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 50 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-8 | -65°C ~ 200°C |
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EVVO |
DIODE SCHOTTKY 20V 5A SMBF
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Capacitance @ Vr, F: 800pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AA, SMB Flat Leads
- Supplier Device Package: SMBF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock15,000 |
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20 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | 800pF @ 4V, 1MHz | Surface Mount | DO-221AA, SMB Flat Leads | SMBF | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 510 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI™ 5
- Supplier Device Package: PowerDI™ 5
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 10A | 510 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600 µA @ 45 V | - | Surface Mount | PowerDI™ 5 | PowerDI™ 5 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 500MA TO236AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 35 V
- Capacitance @ Vr, F: 90pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
- Operating Temperature - Junction: 125°C
|
Package: - |
Request a Quote |
|
40 V | 500mA | 550 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 35 V | 90pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 125°C |
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Micro Commercial Co |
DIODE SCHOTTKY 40V 3A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 125°C
|
Package: - |
Stock21,297 |
|
40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock124,371 |
|
600 V | 1A | 1.5 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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Microchip Technology |
RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
DIODE SCHOTTKY 16V 150MA DO213AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 16 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 35 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150 nA @ 16 V
- Capacitance @ Vr, F: 4.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
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16 V | 150mA | 750 mV @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 4.5pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
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Vishay |
8A, 1000V, STD RECT , SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.6 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 72pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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1000 V | 1.6A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 3.6 µs | 10 µA @ 1000 V | 72pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |