Page 1121 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SS2PH10HM3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO220AA

Package: DO-220AA

Stock114,540
BYT03-400
STMicroelectronics

DIODE GEN PURP 400V 3A DO201AD

Package: DO-201AD, Axial

Stock8,484
IRKE71/04A
Vishay Semiconductor Diodes Division

DIODE MODULE 400V 80A ADD-A-PAK

Package: ADD-A-PAK (2)

Stock7,648
122NQ030
Vishay Semiconductor Diodes Division

DIODE MODULE 30V 120A HALF-PAK

Package: D-67 HALF-PAK

Stock5,728
D1800N46T VF
Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 4800V 1800A

Package: -

Stock5,952
VS-T70HFL10S05
Vishay Semiconductor Diodes Division

DIODE MODULE 100V 70A D-55

Package: D-55 T-Module

Stock5,792
SS29LHRTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Package: DO-219AB

Stock6,048
RSFKL RTG
TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

Package: DO-219AB

Stock7,968
CDLL5819
Microsemi Corporation

DIODE SCHOTTKY 45V 1A DO213AB

Package: DO-213AB, MELF

Stock7,616
SJPM-H4VR
Sanken

DIODE GEN PURP 400V 2A SJP

Package: 2-SMD, J-Lead

Stock25,806
RF103L2STE25
Rohm Semiconductor

DIODE GEN PURP 200V 1A PMDS

Package: DO-214AC, SMA

Stock16,260
LS4150GS08
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 600MA SOD80

Package: SOD-80 Variant

Stock137,862
1N6642US-TR
Microchip Technology

DIODE GEN PURP 75V 300MA D-5D

Package: -

Request a Quote
1N6651
Microchip Technology

RECTIFIER DIODE

Package: -

Request a Quote
1N3297RA
Solid State Inc.

DIODE GP REV 1.4KV 100A DO8

Package: -

Request a Quote
S8PJ-M3-H
Vishay General Semiconductor - Diodes Division

8A, 600V, STD , SM RECT, SMPC

Package: -

Request a Quote
ER301_R2_00001
Panjit International Inc.

DIODE GEN PURP 100V 3A DO201AD

Package: -

Request a Quote
EGL34AHE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 500MA DO213AA

Package: -

Request a Quote
CMSH3-100MA-TR13-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 100V 3A SMA

Package: -

Stock60,678
FR1003-AP
Micro Commercial Co

DIODE GEN PURP 200V 10A R-6

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SS2PH10HM3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock114,540	100V	2A	800mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 100V	65pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
BYT03-400	STMicroelectronics	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55ns Current - Reverse Leakage @ Vr: 20µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	Package: DO-201AD, Axial	Stock8,484	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	20µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
IRKE71/04A	Vishay Semiconductor Diodes Division	DIODE MODULE 400V 80A ADD-A-PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: ADD-A-PAK (2) Supplier Device Package: ADD-A-PAK? Operating Temperature - Junction: -	Package: ADD-A-PAK (2)	Stock7,648	400V	80A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 400V	-	Chassis Mount	ADD-A-PAK (2)	ADD-A-PAK?	-
122NQ030	Vishay Semiconductor Diodes Division	DIODE MODULE 30V 120A HALF-PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 490mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 30V Capacitance @ Vr, F: 7400pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: D-67 HALF-PAK Supplier Device Package: D-67 Operating Temperature - Junction: -	Package: D-67 HALF-PAK	Stock5,728	30V	120A	490mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 30V	7400pF @ 5V, 1MHz	Chassis Mount	D-67 HALF-PAK	D-67	-
D1800N46T VF	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 4800V 1800A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock5,952	-	-	-	-	-	-	-	-	-	-	-
VS-T70HFL10S05	Vishay Semiconductor Diodes Division	DIODE MODULE 100V 70A D-55 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-55 T-Module Supplier Device Package: D-55 Operating Temperature - Junction: -	Package: D-55 T-Module	Stock5,792	100V	70A	-	Fast Recovery =< 500ns, > 200mA (Io)	500ns	100µA @ 100V	-	Chassis Mount	D-55 T-Module	D-55	-
SS29LHRTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,048	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKL RTG	TSC America Inc.	DIODE, FAST, 0.5A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,968	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDLL5819	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 490mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 45V Capacitance @ Vr, F: 70pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AB, MELF	Stock7,616	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 125°C
SJPM-H4VR	Sanken	DIODE GEN PURP 400V 2A SJP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SJP Operating Temperature - Junction: -40°C ~ 150°C	Package: 2-SMD, J-Lead	Stock25,806	400V	2A	1.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 400V	-	Surface Mount	2-SMD, J-Lead	SJP	-40°C ~ 150°C
RF103L2STE25	Rohm Semiconductor	DIODE GEN PURP 200V 1A PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock16,260	200V	1A	920mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 200V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
LS4150GS08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 600MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 600mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 175°C (Max)	Package: SOD-80 Variant	Stock137,862	50V	600mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	175°C (Max)
1N6642US-TR	Microchip Technology	DIODE GEN PURP 75V 300MA D-5D Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 500 nA @ 75 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, D Supplier Device Package: D-5D Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N6651	Microchip Technology	RECTIFIER DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N3297RA	Solid State Inc.	DIODE GP REV 1.4KV 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1400 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	1400 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 1400 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
S8PJ-M3-H	Vishay General Semiconductor - Diodes Division	8A, 600V, STD , SM RECT, SMPC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	5 µA @ 600 V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ER301_R2_00001	Panjit International Inc.	DIODE GEN PURP 100V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 100 V	35pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EGL34AHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 50V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
CMSH3-100MA-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 100V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Stock60,678	100 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	280pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
FR1003-AP	Micro Commercial Co	DIODE GEN PURP 200V 10A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	10A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	10 µA @ 200 V	-	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
JANS1N5811URS	Microchip Technology	DIODE GEN PURP 150V 6A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	150 V	6A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
S15MLWH	Taiwan Semiconductor Corporation	1.5A, 1000V, STANDARD RECOVERY R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock59,880	1000 V	1.5A	1.1 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 175°C
1N5551C-TR	Semtech Corporation	DIODE GEN PURP 400V 5A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 92pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	5A	1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	92pF @ 5V, 1MHz	Through Hole	Axial	Axial	-
S1DF-T	Taiwan Semiconductor Corporation	1A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock22,500	200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	7pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
FESB8JTHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock4,800	600 V	8A	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
1N914-BK-TIN-LEAD	Central Semiconductor Corp	DIODE GEN PURP 100V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 25 nA @ 20 V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Stock7,077	100 V	150mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	25 nA @ 20 V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
R4320	Microchip Technology	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	200 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
A14F	Harris Corporation	DIODE GEN PURP 50V 1A DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 200 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204, Axial Supplier Device Package: DO-204 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	50 V	1A	1.2 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	200 µA @ 50 V	15pF @ 4V, 1MHz	Through Hole	DO-204, Axial	DO-204	-65°C ~ 175°C