|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 300A D67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: D-67 |
Stock4,448 |
|
45V | 300A | 600mV @ 300A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 45V | - | Chassis Mount | D-67 | D-67 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 2000V
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: DO-204AL, DO-41, Axial |
Stock3,568 |
|
2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Diodes Incorporated |
DIODE GEN PURP 800V 1A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock4,880 |
|
800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
|
|
Powerex Inc. |
DIODE GEN PURP REV 1.4KV DO205AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.3µs
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 125°C
|
Package: DO-205AA, DO-8, Stud |
Stock3,568 |
|
1400V | 150A | - | Standard Recovery >500ns, > 200mA (Io) | 2.3µs | - | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 125°C |
|
|
Powerex Inc. |
DIODE GEN PURP 600V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 6.5mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -60°C ~ 200°C
|
Package: DO-205AA, DO-8, Stud |
Stock7,024 |
|
600V | 150A | - | Standard Recovery >500ns, > 200mA (Io) | - | 6.5mA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -60°C ~ 200°C |
|
|
IXYS |
DIODE AVALANCHE 1200V 3.6A AXIAL
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 3.6A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 7A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 180°C
|
Package: Axial |
Stock5,040 |
|
1200V | 3.6A | 1.25V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 2mA @ 1200V | - | Through Hole | Axial | Axial | -40°C ~ 180°C |
|
|
TSC America Inc. |
DIODE, SUPER FAST, 10A, 600V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-2 |
Stock5,344 |
|
600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7.5A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 45V
- Capacitance @ Vr, F: 400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,376 |
|
45V | 7.5A | 570mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, SUPER FAST, 3A, 300V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-201AD, Axial |
Stock7,776 |
|
300V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
TSC America Inc. |
DIODE, 1A, 200V, AEC-Q101, SUB S
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: DO-219AB |
Stock7,600 |
|
200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 200V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
|
TSC America Inc. |
DIODE, 1.5A, 100V, AEC-Q101, DO-
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: DO-204AC, DO-15, Axial |
Stock6,096 |
|
100V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Diodes Incorporated |
SCHOTTKY RECTIFIER TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 660mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: TO-220-3 |
Stock3,248 |
|
100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
|
|
Micro Commercial Co |
DIODE GEN PURP 400V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 28pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: DO-214AA, SMB |
Stock27,108 |
|
400V | 2A | 1.4V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 28pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -50°C ~ 150°C |
|
|
STMicroelectronics |
DIODE SCHOTTKY 45V 10A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Stock17,055 |
|
45 V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | 175°C (Max) |
|
|
Microchip Technology |
DIODE GEN PURP 50V 12A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
50 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
|
|
Diodes Incorporated |
DIODE GEN PURP 200V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 1A | 920 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
|
|
Infineon Technologies |
DIODE SIL CARB 600V 12A TO220-1
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 600 V
- Capacitance @ Vr, F: 310pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Stock1,503 |
|
600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
Nexperia USA Inc. |
DIODE SCHOTTKY 30V 1A SOD128
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
- Capacitance @ Vr, F: 170pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Operating Temperature - Junction: 150°C
|
Package: - |
Stock17,970 |
|
30 V | 1A | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 30 V | 170pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 150°C |
|
|
GeneSiC Semiconductor |
DIODE SIL CARB 1.7KV 18A TO263-7
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1700 V
- Current - Average Rectified (Io): 18A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: 470pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Supplier Device Package: TO-263-7
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
1700 V | 18A | - | No Recovery Time > 500mA (Io) | - | - | 470pF @ 1V, 1MHz | Surface Mount | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
|
|
onsemi |
DIODE SCHOTTKY 40V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
40 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 40 V | - | Surface Mount | DO-214AA, SMB | SMB | - |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock18,000 |
|
200 V | 2A | 900 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 5 µA @ 200 V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Sanken Electric USA Inc. |
SCHOTTKY BARRIER DIODE (SURFACE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
|
Microchip Technology |
DIODE GP 225V 400MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225 V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 nA @ 225 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
225 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 40V 1A SMAF-C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF-C
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock18,000 |
|
40 V | 1A | 500 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 45pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF-C | -55°C ~ 150°C |
|
|
Nexperia USA Inc. |
DIODE SCHOTTKY 40V 1A SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 40 V
- Capacitance @ Vr, F: 69pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 150°C
|
Package: - |
Request a Quote |
|
40 V | 1A | 570 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | 69pF @ 1V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C |
|
|
Panjit International Inc. |
DIODE SCHOTTKY 30V 500MA 2DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 520 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: 2-DFN (1x0.6)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
30 V | 500mA | 520 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | Surface Mount | 0402 (1006 Metric) | 2-DFN (1x0.6) | -55°C ~ 150°C |
|
|
Nexperia USA Inc. |
DIODE SIGE 120V 2A SOD128/CFP5
- Diode Type: SiGe (Silicon Germanium)
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11 ns
- Current - Reverse Leakage @ Vr: 30 nA @ 120 V
- Capacitance @ Vr, F: 75pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Operating Temperature - Junction: 175°C (Max)
|
Package: - |
Request a Quote |
|
120 V | 2A | 840 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 11 ns | 30 nA @ 120 V | 75pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 175°C (Max) |
|
|
Solid State Inc. |
DIODE GEN PURP 500V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
500 V | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |