Page 1174 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RGP10GEHE3/53
Vishay Semiconductor Diodes Division

DIODE SW 1A 400V 150NS DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,440
SGL41-20/1
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO213AB

Package: DO-213AB, MELF

Stock4,960
MBRM3100-13
Diodes Incorporated

DIODE SCHOTTKY 100V 3A

Package: Powermite?3

Stock7,312
MUR5040
GeneSiC Semiconductor

DIODE GEN PURP 400V 50A DO5

Package: DO-203AB, DO-5, Stud

Stock2,448
VS-10TQ035STRLPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,696
VS-12TQ045STRRPBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 15A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,232
MS104/TR8
Microsemi Corporation

DIODE SCHOTTKY 40V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,200
HER604G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 6A, 300V,

Package: R6, Axial

Stock7,584
EGL34BHE3/83
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

Package: DO-213AA (Glass)

Stock5,648
B230Q-13-F
Diodes Incorporated

DIODE SCHOTTKY 30V 2A SMB

Package: DO-214AA, SMB

Stock4,544
RS3A M6G
TSC America Inc.

DIODE, FAST, 3A, 50V, 150NS, DO-

Package: DO-214AB, SMC

Stock7,376
ES1D-TP
Micro Commercial Co

DIODE GEN PURP 200V 1A DO214AC

Package: DO-214AC, SMA

Stock7,248
CMR3U-02 TR13
Central Semiconductor Corp

DIODE GEN PURP 200V 3A SMC

Package: DO-214AB, SMC

Stock5,696
CMR1U-04M TR13
Central Semiconductor Corp

DIODE GEN PURP 400V 1A SMA

Package: DO-214AC, SMA

Stock3,280
BAT46GWX
Nexperia USA Inc.

BAS116GW/SOD123/SOD2

Package: SOD-123

Stock23,784
SMD16PLHE3-TP
Micro Commercial Co

Interface

Package: -

Request a Quote
S3GHM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 3A DO214AB

Package: -

Request a Quote
V8PM103-M3-H
Vishay

8A, 100V, SMPC TRENCH SKY RECT.

Package: -

Request a Quote
SIDC04D60F6X1SA2
Infineon Technologies

DIODE GEN PURP 600V 9A DIE

Package: -

Request a Quote
SBA130CS-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 30V 1A SOT23

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10GEHE3/53	Vishay Semiconductor Diodes Division	DIODE SW 1A 400V 150NS DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,440	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
SGL41-20/1	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO213AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: DO-213AB Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-213AB, MELF	Stock4,960	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	110pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-55°C ~ 125°C
MBRM3100-13	Diodes Incorporated	DIODE SCHOTTKY 100V 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 760mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	Package: Powermite?3	Stock7,312	100V	3A	760mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	100pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
MUR5040	GeneSiC Semiconductor	DIODE GEN PURP 400V 50A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1V @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock2,448	400V	50A	1V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
VS-10TQ035STRLPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 35V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,696	35V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 35V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
VS-12TQ045STRRPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 15A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 45V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,232	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 45V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
MS104/TR8	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,200	40V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
HER604G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 6A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: R6, Axial	Stock7,584	300V	6A	1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
EGL34BHE3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock5,648	100V	500mA	1.25V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
B230Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 30V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 30V Capacitance @ Vr, F: 200pF @ 40V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock4,544	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 40V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
RS3A M6G	TSC America Inc.	DIODE, FAST, 3A, 50V, 150NS, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock7,376	50V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
ES1D-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (HSMA) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-214AC, SMA	Stock7,248	200V	1A	975mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Surface Mount	DO-214AC, SMA	DO-214AC (HSMA)	-50°C ~ 150°C
CMR3U-02 TR13	Central Semiconductor Corp	DIODE GEN PURP 200V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock5,696	200V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
CMR1U-04M TR13	Central Semiconductor Corp	DIODE GEN PURP 400V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock3,280	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
BAT46GWX	Nexperia USA Inc.	BAS116GW/SOD123/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 850mV @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5.9ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 39pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	Package: SOD-123	Stock23,784	100V	-	850mV @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	5.9ns	-	39pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-
SMD16PLHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	60 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	110pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 125°C
S3GHM3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	3A	1.15 V @ 2.5 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	10 µA @ 400 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
V8PM103-M3-H	Vishay	8A, 100V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3.9A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 170 µA @ 100 V Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	100 V	3.9A	710 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 100 V	1150pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SIDC04D60F6X1SA2	Infineon Technologies	DIODE GEN PURP 600V 9A DIE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 9A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 9 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	600 V	9A	1.6 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	-	27 µA @ 600 V	-	Surface Mount	Die	Die	-40°C ~ 175°C
SBA130CS-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 30V 1A SOT23 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	30 V	1A	470 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
RFN10TF6SFHC9	Rohm Semiconductor	DIODE GEN PURP 600V 10A TO220NFM Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220NFM Operating Temperature - Junction: 150°C (Max)	Package: -	Stock2,979	600 V	10A	1.55 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	Through Hole	TO-220-2 Full Pack	TO-220NFM	150°C (Max)
AES1G-HF	Comchip Technology	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.25 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DL	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock70,434	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES2LG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	400 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UTX225	Microchip Technology	DIODE GEN PURP 250V 2A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 3 µA @ 250 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -195°C ~ 175°C	Package: -	Request a Quote	250 V	2A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	3 µA @ 250 V	-	Through Hole	A, Axial	A, Axial	-195°C ~ 175°C
HS5D-V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
1N5391GP-AP	Micro Commercial Co	DIODE GEN PURP 50V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
CDSU400BS-HF	Comchip Technology	DIODE GEN PURP 100V 100MA 0603 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 80 V Capacitance @ Vr, F: 3pF @ 500mV, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	100 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 80 V	3pF @ 500mV, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	-40°C ~ 150°C