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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A DPAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 100V
- Capacitance @ Vr, F: 400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,880 |
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100V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | 400pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,456 |
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400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 75V 300MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,736 |
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75V | 300mA | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Panasonic Electronic Components |
DIODE GEN PURP 40V 200MA SMINI2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 500nA @ 35V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-90, SOD-323F
- Supplier Device Package: SMini2-F1
- Operating Temperature - Junction: 150°C (Max)
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Package: SC-90, SOD-323F |
Stock36,000 |
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40V | 200mA | 1.1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 500nA @ 35V | 4pF @ 0V, 1MHz | Surface Mount | SC-90, SOD-323F | SMini2-F1 | 150°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 400V 20A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 63A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 50µA @ 400V
- Capacitance @ Vr, F: 150pF @ 10V, 1MHz
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock6,880 |
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400V | 20A | 1.4V @ 63A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 50µA @ 400V | 150pF @ 10V, 1MHz | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 15A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-203AA, DO-4, Stud |
Stock3,968 |
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1000V | 15A | 1.5V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1000V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250ns
- Current - Reverse Leakage @ Vr: 2µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock7,584 |
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400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 16A, 100V, 35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 130pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock2,080 |
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100V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 130pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock5,376 |
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300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,016 |
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100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A ITO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock4,336 |
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1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 100V 1.5A DO220
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -
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Package: DO-220AA |
Stock2,096 |
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100V | 1.5A (DC) | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 100V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,584 |
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1000V | 5A | 1.15V @ 5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 1000V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A MPG06
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 600ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: MPG06, Axial
- Supplier Device Package: MPG06
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MPG06, Axial |
Stock6,512 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 1A, 100V, 150NS, TS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock3,792 |
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100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 1A, 800V, 500NS, DO
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,824 |
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800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 400V 2A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock598,188 |
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400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SBR 45V 6A U-DFN3030-8
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerUDFN
- Supplier Device Package: U-DFN3030-8
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 8-PowerUDFN |
Stock6,288 |
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45V | 6A | 520mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 45V | - | Surface Mount | 8-PowerUDFN | U-DFN3030-8 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
0.35A, 40V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 30 V
- Capacitance @ Vr, F: 23pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523F
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 5 µA @ 30 V | 23pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523F | -55°C ~ 125°C |
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Diotec Semiconductor |
ULTRAFAST SMC 600V 3A 75NS 150C
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 600 V | - | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 600V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | 4pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
35NS, 1A, 500V, SUPER FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 500 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock59,505 |
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500 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 8pF @ 4V, 1MHz | Surface Mount | SOD-123 | Sub SMA | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 300V 2A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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300 V | 2A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | - | - | Surface Mount | SQ-MELF, A | A, SQ-MELF | - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock7,470 |
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200 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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MDD |
DIODE GEN PURP 1KV 2A SMAF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
1000 V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 600V 5A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock126 |
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600 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 600 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
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Microchip Technology |
DIODE GEN PURP 400V 400MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 400mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 nA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-204AH (DO-35)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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400 V | 400mA | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 200 nA @ 400 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-204AH (DO-35) | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY SMD
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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