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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 20V 2A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-214AA, SMB |
Stock7,440 |
|
20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 125°C |
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Semtech Corporation |
DIODE GEN PURP 16KV 6A MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 16000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 16V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 2µA @ 16000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: Module |
Stock5,856 |
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16000V | 6A | 16V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 2µA @ 16000V | - | Chassis Mount | Module | - | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-205AA, DO-8, Stud |
Stock6,160 |
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600V | 150A | 1.2V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 10A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock7,056 |
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90V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 6A, 150V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,712 |
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150V | 6A | 975mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 100pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA (Glass) |
Stock7,248 |
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50V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, 3A, 600V, AEC-Q101, DO-21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock3,552 |
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600V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-214AC, SMA |
Stock6,368 |
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90V | 1A | 770mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | 175°C (Max) |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 1A, 1000V
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,280 |
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- | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150MW 50V SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 1ns
- Current - Reverse Leakage @ Vr: 200nA @ 40V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-76, SOD-323 |
Stock5,232 |
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50V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,976 |
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100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 650V 4A DPAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 40µA @ 650V
- Capacitance @ Vr, F: 200pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,048 |
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650V | 4A | 1.75V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 200pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -40°C ~ 175°C |
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Sanken |
DIODE GEN PURP 400V 1.5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock3,264 |
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400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 5A SOT223
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-261-4, TO-261AA |
Stock28,422 |
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40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 40V | - | Surface Mount | TO-261-4, TO-261AA | SOT-223 | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 200V 1A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 200V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AC, SMA |
Stock105,594 |
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200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -50°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 50V 150A DO8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-8
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
50 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 50 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-8 | -65°C ~ 200°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 1A DO219AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 700 mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 7.3pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock28,800 |
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400 V | 1A | 1.1 V @ 700 mA | Standard Recovery >500ns, > 200mA (Io) | 1.2 µs | 5 µA @ 400 V | 7.3pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 125V 300MA D-5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 150 V
- Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, E
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
125 V | 300mA | 1.1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4.5 ns | 500 nA @ 150 V | 2.5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, E | D-5B | -65°C ~ 175°C |
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Diodes Incorporated |
FAST RECOVERY RECTIFIER SMB T&R
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1 kV
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1 kV | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 5A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
40 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | - | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Vishay |
8A, 400V, STD RECT, SLIMDPAK 2L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 960 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 280 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: SlimDPAK
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
400 V | 8A | 960 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 5 µA @ 400 V | 70pF @ 4V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | SlimDPAK | -55°C ~ 175°C |
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Microchip Technology |
SIGNAL OR COMPUTER DIODE
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
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Bourns Inc. |
DIODE GEN PURP 200V 3A 2SMD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 19pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -65°C ~ 175°C
|
Package: - |
Request a Quote |
|
200 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 19pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
GLASS PASSIVATED SMD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
|
Package: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
|
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Micro Commercial Co |
DIODE GEN PURP 200V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A TS-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Stock15,000 |
|
400 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SIL CARB 650V 2.15A LPTL
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 2.15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2.15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 10.8 µA @ 650 V
- Capacitance @ Vr, F: 110pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPTL
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock1,497 |
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650 V | 2.15A | 1.5 V @ 2.15 A | No Recovery Time > 500mA (Io) | 0 ns | 10.8 µA @ 650 V | 110pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Solid State Inc. |
DIODE GEN PURP 200V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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200 V | 12A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |