Page 1197 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N5821US
Microsemi Corporation

DIODE SCHOTTKY 30V 3A B-MELF

Package: SQ-MELF, B

Stock4,832
BY133GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 1A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,872
D2025L
Littelfuse Inc.

DIODE GEN PURP 200V 15.9A TO220

Package: TO-220-3 Isolated Tab

Stock3,424
B360-13
Diodes Incorporated

DIODE SCHOTTKY 60V 3A SMC

Package: DO-214AB, SMC

Stock62,964
VS-1N2133A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 60A DO203AB

Package: DO-203AB, DO-5, Stud

Stock2,128
VS-60EPU06P-S1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO247AC

Package: TO-247-3

Stock6,736
MS106/TR8
Microsemi Corporation

DIODE SCHOTTKY 60V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock2,016
VS-10TQ045STRRHM3
Vishay Semiconductor Diodes Division

DIODE

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,712
SF64GHA0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 200V, 35N

Package: DO-201AD, Axial

Stock2,208
USB260-M3/52T
Vishay Semiconductor Diodes Division

DIODE 2A 600V 30NS DO-214AA

Package: DO-214AA, SMB

Stock7,904
HS2K M4G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 800V,

Package: DO-214AA, SMB

Stock7,904
ES1DHR3G
TSC America Inc.

DIODE, SUPER FAST, 1A, 200V, 35N

Package: DO-214AC, SMA

Stock7,696
SE10PJ-M3/85A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO220AA

Package: DO-220AA

Stock4,032
BAS170WS-HE3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 70V 70MA SOD323

Package: SC-76, SOD-323

Stock6,064
RS1JLHMTG
TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

Package: DO-219AB

Stock6,608
CDSFR4148-HF
Comchip Technology

DIODE GEN PURP 75V 150MA 1005

Package: 1005 (2512 Metric)

Stock5,808
VS-85HF20
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 85A DO203AB

Package: DO-203AB, DO-5, Stud

Stock6,312
US1GFA
Fairchild/ON Semiconductor

DIODE GEN PURP 400V 1A SOD123FA

Package: SOD-123W

Stock80,898
CMPD6001 TR
Central Semiconductor Corp

DIODE GEN PURP 75V 250MA SOT23

Package: TO-236-3, SC-59, SOT-23-3

Stock52,392
SBR15U50SP5-13
Diodes Incorporated

DIODE SBR 50V 15A POWERDI5

Package: PowerDI? 5

Stock730,032

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N5821US	Microsemi Corporation	DIODE SCHOTTKY 30V 3A B-MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C	Package: SQ-MELF, B	Stock4,832	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
BY133GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -	Package: DO-204AC, DO-15, Axial	Stock3,872	1300V	1A	1.2V @ 2A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1300V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-
D2025L	Littelfuse Inc.	DIODE GEN PURP 200V 15.9A TO220 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 15.9A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15.9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Isolated Tab Supplier Device Package: TO-220 Isolated Tab Operating Temperature - Junction: -40°C ~ 125°C	Package: TO-220-3 Isolated Tab	Stock3,424	200V	15.9A	1.6V @ 15.9A	Standard Recovery >500ns, > 200mA (Io)	4µs	-	-	Through Hole	TO-220-3 Isolated Tab	TO-220 Isolated Tab	-40°C ~ 125°C
B360-13	Diodes Incorporated	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock62,964	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
VS-1N2133A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 60A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 188A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AB, DO-5, Stud	Stock2,128	300V	60A	1.3V @ 188A	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 300V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 200°C
VS-60EPU06P-S1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.68V @ 60A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 81ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-247-3	Stock6,736	600V	60A	1.68V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	81ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 175°C
MS106/TR8	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,016	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 175°C
VS-10TQ045STRRHM3	Vishay Semiconductor Diodes Division	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,712	45V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
SF64GHA0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock2,208	200V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
USB260-M3/52T	Vishay Semiconductor Diodes Division	DIODE 2A 600V 30NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,904	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 600V	45pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2K M4G	TSC America Inc.	DIODE, HIGH EFFICIENT, 2A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock7,904	800V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1DHR3G	TSC America Inc.	DIODE, SUPER FAST, 1A, 200V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,696	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SE10PJ-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-220AA	Stock4,032	600V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 600V	-	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
BAS170WS-HE3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 70V 70MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 70V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 125°C	Package: SC-76, SOD-323	Stock6,064	70V	70mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 70V	2pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 125°C
RS1JLHMTG	TSC America Inc.	DIODE, FAST, 0.8A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,608	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CDSFR4148-HF	Comchip Technology	DIODE GEN PURP 75V 150MA 1005 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 2.5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 1005 (2512 Metric) Supplier Device Package: 1005/SOD-323F Operating Temperature - Junction: 125°C (Max)	Package: 1005 (2512 Metric)	Stock5,808	75V	150mA	1V @ 50mA	Small Signal =< 200mA (Io), Any Speed	4ns	2.5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
VS-85HF20	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 85A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AB, DO-5, Stud	Stock6,312	200V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 150°C
US1GFA	Fairchild/ON Semiconductor	DIODE GEN PURP 400V 1A SOD123FA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123W	Stock80,898	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123FA	-55°C ~ 150°C
CMPD6001 TR	Central Semiconductor Corp	DIODE GEN PURP 75V 250MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 500pA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-236-3, SC-59, SOT-23-3	Stock52,392	75V	250mA	1.1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	500pA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-65°C ~ 150°C
SBR15U50SP5-13	Diodes Incorporated	DIODE SBR 50V 15A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 520mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -65°C ~ 150°C	Package: PowerDI? 5	Stock730,032	50V	15A	520mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	PowerDI? 5	PowerDI? 5	-65°C ~ 150°C
CD0-5A30	Microchip Technology	DIODE SCHOTTKY 30V 200MA DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 30 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	30 V	200mA	500 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 30 V	50pF @ 0V, 1MHz	Surface Mount	Die	Die	-65°C ~ 125°C
V8PM15-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 150 V Capacitance @ Vr, F: 460pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock54,210	150 V	8A	1.08 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 150 V	460pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
JANTXV1N5417US-TR	Microchip Technology	DIODE GEN PURP 200V 3A D-5B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 175°C
CD5712V	Microchip Technology	DIODE SCHOTTKY 16V 35MA DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 16 V Current - Average Rectified (Io): 35mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 35 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 nA @ 16 V Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	16 V	35mA	1 V @ 35 mA	Small Signal =< 200mA (Io), Any Speed	-	150 nA @ 16 V	1.2pF @ 0V, 1MHz	Surface Mount	Die	Die	-55°C ~ 125°C
HER305G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock7,425	400 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
R4000GPS-AP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	4000 V	200mA	3.5 V @ 500 mA	Small Signal =< 200mA (Io), Any Speed	1.2 µs	5 µA @ 4000 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
ES5AC-HF	Comchip Technology	DIODE GEN PURP 50V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	5A	1 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S53120TS	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-