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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock7,040 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock4,496 |
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45V | 6A | 600mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 30V 120A HALF-PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 490mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 30V
- Capacitance @ Vr, F: 7400pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: D-67 HALF-PAK
- Supplier Device Package: D-67
- Operating Temperature - Junction: -
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Package: D-67 HALF-PAK |
Stock4,480 |
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30V | 120A | 490mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | 7400pF @ 5V, 1MHz | Chassis Mount | D-67 HALF-PAK | D-67 | - |
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Powerex Inc. |
DIODE GEN PURP 400V 550A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 550A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15µs
- Current - Reverse Leakage @ Vr: 50mA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-200AA, A-PUK |
Stock3,792 |
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400V | 550A | 1.2V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 15µs | 50mA @ 400V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1KV 6A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock4,016 |
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1000V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AB, SMC |
Stock4,752 |
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200V | 3A | 875mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AC, SMA |
Stock6,848 |
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200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Bourns Inc. |
DIODE GEN PURP 200V 3A SMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock4,736 |
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200V | 3A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 200V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 600ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: MPG06, Axial
- Supplier Device Package: MPG06
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: MPG06, Axial |
Stock7,616 |
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400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AL, DO-41, Axial |
Stock4,320 |
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60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 5A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 980mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: 8-PowerTDFN, 5 Leads |
Stock27,234 |
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100V | 5A | 980mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 100V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 250V 200MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 40nA @ 200V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock388,464 |
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250V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 40nA @ 200V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 50 V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 5A | 1.15 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 50 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Bourns Inc. |
DIODE SCHOTTKY 60V 1A 2SMD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock411,453 |
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60 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 110pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2-SMD | -55°C ~ 125°C |
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Micro Commercial Co |
DIODE GEN PURP 1.6KV 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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1600 V | 1A | 1.25 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1600 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
10A, 60V, SMPC TRENCH SKY RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 60 V
- Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Stock12,954 |
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60 V | 10A | 530 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 60 V | 2100pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A THIN SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: Thin SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock41,250 |
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600 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | Thin SMA | -55°C ~ 150°C |
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MDD |
DIODE SCHOTTKY 45V 10A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 45 V
- Capacitance @ Vr, F: 500pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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45 V | 10A | 650 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 45 V | 500pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -50°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 100V 8A TO257
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 80 V
- Capacitance @ Vr, F: 150pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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100 V | 8A | 1.06 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 80 V | 150pF @ 5V, 1MHz | Through Hole | TO-257-3 | TO-257 | - |
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Diotec Semiconductor |
IC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -50°C ~ 175°C
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Package: - |
Request a Quote |
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45 V | 15A | 500 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -50°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 200V 1.6A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40 µA @ 200 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 1.6A | 760 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 200 V | 90pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -40°C ~ 175°C |
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Panjit International Inc. |
DIODE GEN PURP 600V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1.5A | 1.1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 3 µs | 1 µA @ 600 V | 10pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 100V 3A SLIMSMAW
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SlimSMAW (DO-221AD)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock41,850 |
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100 V | 3A | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 100 V | - | Surface Mount | DO-221AC, SMA Flat Leads | SlimSMAW (DO-221AD) | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 400V 10A R-6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 10A | 1.3 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | - | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 75V 300MA SQ-MELF B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 50 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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75 V | 300mA | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 200°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V 3A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 200 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock162,573 |
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200 V | 3A | 900 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 200 V | 100pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |