Page 1601 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RM25HG-24S
Powerex Inc.

DIODE GEN PURP 1.2KV 25A TO264-3

Package: TO-264-3, TO-264AA

Stock6,368
FDH444_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 125V 200MA DO35

Package: DO-204AH, DO-35, Axial

Stock4,960
ISOPAC0211
Semtech Corporation

DIODE GEN PURP 150V 15A

Package: -

Stock3,344
JANTXV1N5615
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

Package: A, Axial

Stock6,656
FR70BR02
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 70A DO5

Package: DO-203AB, DO-5, Stud

Stock2,160
SFF2005G C0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 300V, 35

Package: TO-220-3 Full Pack, Isolated Tab

Stock7,248
HSM150GE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO215AA

Package: DO-215AA, SMB Gull Wing

Stock4,576
MBRB1635TR
SMC Diode Solutions

DIODE SCHOTTKY 35V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,608
AL01ZV0
Sanken

DIODE GEN PURP 200V 1A AXIAL

Package: Axial

Stock5,408
BYG21MHM3_A/H
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A SMA

Package: DO-214AC, SMA

Stock7,584
NSVBAS16TT1G
ON Semiconductor

DIODE GEN PURP 100V 200MA SC75

Package: SC-75, SOT-416

Stock7,840
MUH1PB-M3/89A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A MICROSMP

Package: MicroSMP

Stock324,000
SS12HR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Package: DO-214AC, SMA

Stock4,080
V10KM120DU-M3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 5A DUAL FLAT

Package: 8-PowerTDFN

Stock6,944
RS1ML R3G
TSC America Inc.

DIODE, FAST, 0.8A, 1000V, 500NS,

Package: DO-219AB

Stock6,064
CMSH5-200HV TR13
Central Semiconductor Corp

DIODE SCHOTTKY 200V 5A SMC

Package: DO-214AB, SMC

Stock2,672
1N4936-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock262,668
SE8D30JHM3-H
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3A SLIMSMAW

Package: -

Stock43,740
BA159-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO41

Package: -

Request a Quote
SD2010S060S3R0
KYOCERA AVX

SCHOTTKY DIODES

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RM25HG-24S	Powerex Inc.	DIODE GEN PURP 1.2KV 25A TO264-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 4V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-264-3, TO-264AA	Stock6,368	1200V	25A	4V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	100µA @ 1200V	-	Through Hole	TO-264-3, TO-264AA	-	-40°C ~ 150°C
FDH444_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 125V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 50nA @ 100V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock4,960	125V	200mA	1.2V @ 300mA	Small Signal =< 200mA (Io), Any Speed	60ns	50nA @ 100V	2.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
ISOPAC0211	Semtech Corporation	DIODE GEN PURP 150V 15A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 9A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock3,344	150V	15A	1.1V @ 9A	Standard Recovery >500ns, > 200mA (Io)	30ns	10µA @ 150V	-	-	-	-	-55°C ~ 175°C
JANTXV1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 500nA @ 200V Capacitance @ Vr, F: 45pF @ 12V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 175°C	Package: A, Axial	Stock6,656	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
FR70BR02	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock2,160	100V	70A	1.4V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
SFF2005G C0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 300V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3 Full Pack, Isolated Tab	Stock7,248	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
HSM150GE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO215AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AA, SMB Gull Wing Supplier Device Package: DO-215AA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-215AA, SMB Gull Wing	Stock4,576	50V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Surface Mount	DO-215AA, SMB Gull Wing	DO-215AA	-55°C ~ 175°C
MBRB1635TR	SMC Diode Solutions	DIODE SCHOTTKY 35V 16A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,608	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 35V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
AL01ZV0	Sanken	DIODE GEN PURP 200V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 980mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock5,408	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
BYG21MHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 1.5A SMA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120ns Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock7,584	1000V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
NSVBAS16TT1G	ON Semiconductor	DIODE GEN PURP 100V 200MA SC75 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75, SOT-416 Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-75, SOT-416	Stock7,840	100V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 100V	-	Surface Mount	SC-75, SOT-416	SC-75, SOT-416	-55°C ~ 150°C
MUH1PB-M3/89A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A MICROSMP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40ns Current - Reverse Leakage @ Vr: 1µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: MicroSMP Supplier Device Package: MicroSMP Operating Temperature - Junction: -55°C ~ 175°C	Package: MicroSMP	Stock324,000	100V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	1µA @ 100V	-	Surface Mount	MicroSMP	MicroSMP	-55°C ~ 175°C
SS12HR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock4,080	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
V10KM120DU-M3/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 5A DUAL FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 890mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	Package: 8-PowerTDFN	Stock6,944	120V	10A	890mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	450pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	-	-40°C ~ 175°C
RS1ML R3G	TSC America Inc.	DIODE, FAST, 0.8A, 1000V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,064	1000V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CMSH5-200HV TR13	Central Semiconductor Corp	DIODE SCHOTTKY 200V 5A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -60°C ~ 175°C	Package: DO-214AB, SMC	Stock2,672	200V	5A	900mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 200V	-	Surface Mount	DO-214AB, SMC	SMC	-60°C ~ 175°C
1N4936-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock262,668	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
SE8D30JHM3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 3A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock43,740	600 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 600 V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
BA159-AP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	1000 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 1000 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
SD2010S060S3R0	KYOCERA AVX	SCHOTTKY DIODES Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	1206 (3216 Metric)	1206	-55°C ~ 125°C
SL54AFL-TP	Micro Commercial Co	DIODE SCHOTTKY 40V 5A DO221AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock57,867	40 V	5A	450 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
1N5805-TR	Microchip Technology	DIODE GEN PURP 125V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 125 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	125 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 125 V	25pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 125°C
UF5GI_R1_00001	Panjit International Inc.	DIODE GEN PURP 400V 5A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	5A	1.25 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 400 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
SICU1060P-TP	Micro Commercial Co	DIODE SIL CARBIDE 650V 10A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 44 µA @ 650 V Capacitance @ Vr, F: 452pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock7,500	650 V	10A	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	452pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 175°C
SS34B	MDD	DIODE SCHOTTKY 40V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	500pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
CRS04-TE85L	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A SFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: -	Request a Quote	40 V	1A	510 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
BAS70LSYL	Nexperia USA Inc.	DIODE SCHOTTKY 70V 70MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 70 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006BD-2 Operating Temperature - Junction: 150°C	Package: -	Stock13,494	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 70 V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	DFN1006BD-2	150°C
HER108G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock14,949	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C