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Infineon Technologies |
DIODE SCHOTTKY 600V 6A WAFER
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Sawn on foil
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: Die |
Stock5,600 |
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600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 300pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 525mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock168,360 |
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40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 800V 150A DO-8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -40°C ~ 180°C
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Package: DO-205AA, DO-8, Stud |
Stock5,376 |
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800V | 150A | 1.47V @ 600A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -40°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 50A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 125A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -55°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock6,224 |
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800V | 50A | 1.4V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
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IXYS |
DIODE GEN PURP 300V 10A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,816 |
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300V | 10A | 1.27V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SUPER FAST, 3A, 200V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 46pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock3,744 |
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200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 46pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 2A POWERMITE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 12µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-216AA
- Supplier Device Package: Powermite
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-216AA |
Stock5,456 |
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60V | 2A | 650mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 12µA @ 60V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 8A D2PAK
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 650V
- Capacitance @ Vr, F: 414pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,736 |
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650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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Diodes Incorporated |
DIODE SBR 60V 2A SOD123F
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 150µA @ 60V
- Capacitance @ Vr, F: 75pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-123F |
Stock7,408 |
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60V | 2A | 510mV @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 150µA @ 60V | 75pF @ 10V, 1MHz | Surface Mount | SOD-123F | SOD-123F | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.9V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 30µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Insulated, TO-220AC
- Supplier Device Package: TO-220AC ins
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 Insulated, TO-220AC |
Stock15,144 |
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600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 100MA SOD523
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 100mA
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 25V
- Capacitance @ Vr, F: 15pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: SC-79, SOD-523 |
Stock11,432,844 |
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40V | 100mA | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 25V | 15pF @ 10V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -40°C ~ 125°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 3A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: 200pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock9,560,760 |
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40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 200pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA | -55°C ~ 150°C |
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onsemi |
DIODE SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
DIODE SCHOTTKY 45V 15A TO277
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock21,480 |
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45 V | 15A | 750 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
50NS, 10A, 300V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 300 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,970 |
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300 V | 10A | 1 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 300 V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Diodes Incorporated |
MODULE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1 kV
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 3A | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1 kV | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE AVAL 600V 1.5A DO219AB
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.3 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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600 V | 1.5A | 1.15 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | 1.3 µs | 5 µA @ 600 V | 8.8pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GP 200V 800MA SOD123W
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 800 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 21pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 800mA | 950 mV @ 800 mA | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 200 V | 21pF @ 4V, 1MHz | Surface Mount | SOD-123W | SOD-123W | -55°C ~ 150°C |
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SMC Diode Solutions |
700V, 10A, ITO-220AC-2L, ULTRA F
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock24,000 |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 55 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 600 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock45,000 |
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600 V | 2A | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 55 ns | 2 µA @ 600 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 100V 1A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11.5 ns
- Current - Reverse Leakage @ Vr: 900 nA @ 100 V
- Capacitance @ Vr, F: 125pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 175°C
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Package: - |
Stock34,017 |
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100 V | 1A | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 11.5 ns | 900 nA @ 100 V | 125pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 175°C |
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WeEn Semiconductors |
DIODE SIL CARBIDE 650V 6A 5DFN
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Capacitance @ Vr, F: 201pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 4-VSFN Exposed Pad
- Supplier Device Package: 5-DFN (8x8)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 201pF @ 1V, 1MHz | Surface Mount | 4-VSFN Exposed Pad | 5-DFN (8x8) | -55°C ~ 175°C |
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Harris Corporation |
DIODE AVALANCHE 200V 8A TO220AC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 8A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 100 µA @ 200 V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 30V SMD0603B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 430 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 nA @ 10 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 0201 (0603 Metric)
- Supplier Device Package: DSN0603-2, SOD-962, SMD0603
- Operating Temperature - Junction: 150°C
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Package: - |
Stock68,775 |
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30 V | 200mA | 430 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 300 nA @ 10 V | - | Surface Mount | 0201 (0603 Metric) | DSN0603-2, SOD-962, SMD0603 | 150°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 150A THINKEY3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 45 V
- Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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45 V | 150A | 460 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 45 V | 7000pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE GEN PURP 100V 200MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 100 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock323,349 |
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100 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 100 V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1KV 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -
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Package: - |
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1000 V | 1A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | - |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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150 V | 5A | 1.05 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 150 V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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