Page 1634 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

1N4007-N-0-3-AP
Micro Commercial Co

DIODE GEN PURP 1KV 1A DO-41

Package: DO-204AL, DO-41, Axial

Stock7,856
MBRB1660HE3/81
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 16A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,000
RGP02-14EHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 500MA DO204

Package: DO-204AL, DO-41, Axial

Stock5,408
STTH4R02FP
STMicroelectronics

DIODE GEN PURP 200V 4A TO220FP

Package: TO-220-2 Full Pack

Stock6,624
RB441Q-40T-77
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA MSD

Package: DO-204AG, DO-34, Axial

Stock3,904
CDLL4150
Microsemi Corporation

DIODE GEN PURP 75V 300MA DO213AA

Package: DO-213AA

Stock5,712
FMN-3306S
Sanken

DIODE GEN PURP 600V 30A TO3PF

Package: TO-3PF

Stock4,816
V20100SHM3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-220AB

Package: TO-220-3

Stock5,232
FR1001-BP
Micro Commercial Co

DIODE GEN PURP 50V R-6

Package: R6, Axial

Stock4,560
FR151GHA0G
TSC America Inc.

DIODE, FAST, 1.5A, 50V, 150NS, A

Package: DO-204AC, DO-15, Axial

Stock6,512
GB05SLT12-220
GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 5A TO220AC

Package: TO-220-2

Stock7,424
VS-70HFR10
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 70A DO203AB

Package: DO-203AB, DO-5, Stud

Stock6,176
SCS215AGC
Rohm Semiconductor

DIODE SCHOTTKY 650V 15A TO220AC

Package: TO-220-2

Stock13,596
UF1005-T
Diodes Incorporated

DIODE GEN PURP 600V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock123,600
CDBDSC5650-G
Comchip Technology

DIODE SIL CARB 650V 21.5A DPAK

Package: -

Stock7,458
FR2D-TP
Micro Commercial Co

DIODE GP 200V 2A DO214AA HSMB

Package: -

Request a Quote
1N34A-TR
Central Semiconductor Corp

DIODE GEN PURP 75V 50MA DO7

Package: -

Request a Quote
JANTX1N5822US
Semtech Corporation

DIODE SCHOTTKY 40V 3A

Package: -

Request a Quote
HER108BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 1KV 1A DO41

Package: -

Request a Quote
FR103-AP
Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N4007-N-0-3-AP	Micro Commercial Co	DIODE GEN PURP 1KV 1A DO-41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock7,856	1000V	1A (DC)	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
MBRB1660HE3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,000	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
RGP02-14EHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.4KV 500MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,408	1400V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
STTH4R02FP	STMicroelectronics	DIODE GEN PURP 200V 4A TO220FP Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2 Full Pack	Stock6,624	200V	4A	1.05V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220FPAC	175°C (Max)
RB441Q-40T-77	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA MSD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 6pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD Operating Temperature - Junction: 125°C (Max)	Package: DO-204AG, DO-34, Axial	Stock3,904	40V	100mA	550mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 40V	6pF @ 10V, 1MHz	Through Hole	DO-204AG, DO-34, Axial	MSD	125°C (Max)
CDLL4150	Microsemi Corporation	DIODE GEN PURP 75V 300MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100nA @ 50V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA	Stock5,712	75V	300mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	2.5pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
FMN-3306S	Sanken	DIODE GEN PURP 600V 30A TO3PF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3PF Supplier Device Package: TO-3PF Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-3PF	Stock4,816	600V	30A	1.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	200µA @ 600V	-	Through Hole	TO-3PF	TO-3PF	-40°C ~ 150°C
V20100SHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 100V TO-220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 350µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-220-3	Stock5,232	100V	20A	1.07V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
FR1001-BP	Micro Commercial Co	DIODE GEN PURP 50V R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	Package: R6, Axial	Stock4,560	50V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 50V	-	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
FR151GHA0G	TSC America Inc.	DIODE, FAST, 1.5A, 50V, 150NS, A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock6,512	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
GB05SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 5A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 1200V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock7,424	1200V	5A	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	50µA @ 1200V	260pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-70HFR10	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 70A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 220A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15mA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock6,176	100V	70A	1.35V @ 220A	Standard Recovery >500ns, > 200mA (Io)	-	15mA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 180°C
SCS215AGC	Rohm Semiconductor	DIODE SCHOTTKY 650V 15A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 300µA @ 600V Capacitance @ Vr, F: 550pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220ACFP Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock13,596	650V	15A	1.55V @ 15A	No Recovery Time > 500mA (Io)	0ns	300µA @ 600V	550pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220ACFP	175°C (Max)
UF1005-T	Diodes Incorporated	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock123,600	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CDBDSC5650-G	Comchip Technology	DIODE SIL CARB 650V 21.5A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 21.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 424pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock7,458	650 V	21.5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	424pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 175°C
FR2D-TP	Micro Commercial Co	DIODE GP 200V 2A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	200 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-50°C ~ 150°C
1N34A-TR	Central Semiconductor Corp	DIODE GEN PURP 75V 50MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 50mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -50°C ~ 75°C	Package: -	Request a Quote	75 V	50mA	1 V @ 5 mA	Small Signal =< 200mA (Io), Any Speed	-	500 µA @ 50 V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-50°C ~ 75°C
JANTX1N5822US	Semtech Corporation	DIODE SCHOTTKY 40V 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF Supplier Device Package: - Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	Surface Mount	SQ-MELF	-	-65°C ~ 125°C
HER108BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
FR103-AP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
JANTXV1N4938-1-TR	Microchip Technology	DIODE GEN PURP 175V DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 175 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 pA @ 175 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	175 V	-	1 V @ 30 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 pA @ 175 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
JANHCB2N5416	Microchip Technology	BJT TRANSISTOR Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SDM20U30Q-7	Diodes Incorporated	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Stock33,105	30 V	200mA	500 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	150 µA @ 30 V	20pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	-65°C ~ 125°C
DMA30IM1600PZ-TUB	IXYS	DIODE GEN PURP 1.6KV 30A TO263HV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 1600 V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263HV Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	1600 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1600 V	10pF @ 400V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263HV	-55°C ~ 175°C
16FR30	Solid State Inc.	DIODE GEN PURP 300V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	300 V	16A	1.2 V @ 16 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 300 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
BAS21A	Diodes Incorporated	SIGNAL SWITCHING DIODE SOT23 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
V12PM63HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.6A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.6A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 60 V Capacitance @ Vr, F: 2400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock19,500	60 V	4.6A	650 mV @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	30 µA @ 60 V	2400pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
1N4004W-TP	Micro Commercial Co	DIODE GEN PURP 400V 1A SOD-123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C