Page 1660 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

DSEP15-03A
IXYS

DIODE GEN PURP 300V 15A TO220AC

Package: TO-220-2

Stock27,600
JAN1N457
Microsemi Corporation

DIODE GEN PURP 70V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock6,240
GKN26/04
GeneSiC Semiconductor

DIODE GEN PURP 400V 25A DO4

Package: DO-203AA, DO-4, Stud

Stock3,488
6A02-G
Comchip Technology

DIODE GEN PURP 200V 6A R6

Package: R6, Axial

Stock2,864
EU 1
Sanken

DIODE GEN PURP 400V 250MA AXIAL

Package: Axial

Stock3,024
S2K R5G
TSC America Inc.

DIODE, 2A, 800V, DO-214AA (SMB)

Package: DO-214AA, SMB

Stock3,952
HT17G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Package: T-18, Axial

Stock6,944
SK25A M2G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 5

Package: DO-214AC, SMA

Stock6,816
ES1GLHRHG
TSC America Inc.

DIODE, SUPER FAST, 1A, 400V, 35N

Package: DO-219AB

Stock6,672
GSD2004W-E3-18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 240V 225MA SOD123

Package: SOD-123

Stock4,832
NRVB1H100SFT3G
ON Semiconductor

DIODE SCHOTTKY 100V 1A SOD123

Package: SOD-123F

Stock6,992
PD3S160Q-7
Diodes Incorporated

DIODE SCHOTTKY 60V 1A POWERDI323

Package: PowerDI? 323

Stock7,888
RHRD660S9A
Fairchild/ON Semiconductor

DIODE GEN PURP 600V 6A TO252-3

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock538,980
NRVBS360T3G
ON Semiconductor

DIODE SCHOTTKY 60V 3A SMC

Package: DO-214AB, SMC

Stock5,824
DA3X101K0L
Panasonic Electronic Components

DIODE GEN PURP 80V 100MA MINI3

Package: TO-236-3, SC-59, SOT-23-3

Stock85,206
1N914BWT
Fairchild/ON Semiconductor

DIODE GEN PURP 75V 200MA SOD523F

Package: SC-79, SOD-523F

Stock651,438
FR1J
SMC Diode Solutions

DIODE GEN PURP 600V 1A SMB

Package: -

Request a Quote
ACDBMHT340-HF
Comchip Technology

AUTOMOTIVE DIODE SCHOTTKY 40V 3A

Package: -

Request a Quote
GP60160B-BP
Micro Commercial Co

Interface

Package: -

Request a Quote
XBF10A60S-G
Torex Semiconductor Ltd

DIODE GEN PURP 600V 1A SMAF

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSEP15-03A	IXYS	DIODE GEN PURP 300V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.68V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 100µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock27,600	300V	15A	1.68V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	100µA @ 300V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
JAN1N457	Microsemi Corporation	DIODE GEN PURP 70V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 70V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 70V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AH, DO-35, Axial	Stock6,240	70V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
GKN26/04	GeneSiC Semiconductor	DIODE GEN PURP 400V 25A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AA, DO-4, Stud	Stock3,488	400V	25A	1.55V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	4mA @ 400V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-40°C ~ 180°C
6A02-G	Comchip Technology	DIODE GEN PURP 200V 6A R6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 125°C	Package: R6, Axial	Stock2,864	200V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 200V	100pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 125°C
EU 1	Sanken	DIODE GEN PURP 400V 250MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 2.5V @ 250mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: Axial	Stock3,024	400V	250mA	2.5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
S2K R5G	TSC America Inc.	DIODE, 2A, 800V, DO-214AA (SMB) Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 1µA @ 800V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock3,952	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HT17G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock6,944	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SK25A M2G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AC, SMA	Stock6,816	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1GLHRHG	TSC America Inc.	DIODE, SUPER FAST, 1A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,672	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
GSD2004W-E3-18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 240V 225MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io): 225mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max)	Package: SOD-123	Stock4,832	240V	225mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 240V	5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	150°C (Max)
NRVB1H100SFT3G	ON Semiconductor	DIODE SCHOTTKY 100V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 760mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 175°C	Package: SOD-123F	Stock6,992	100V	1A	760mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 100V	-	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 175°C
PD3S160Q-7	Diodes Incorporated	DIODE SCHOTTKY 60V 1A POWERDI323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 640mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 60V Capacitance @ Vr, F: 38pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: PowerDI? 323 Supplier Device Package: PowerDI? 323 Operating Temperature - Junction: -55°C ~ 150°C	Package: PowerDI? 323	Stock7,888	60V	1A	640mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 60V	38pF @ 10V, 1MHz	Surface Mount	PowerDI? 323	PowerDI? 323	-55°C ~ 150°C
RHRD660S9A	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 6A TO252-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock538,980	600V	6A	2.1V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	100µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252AA	-55°C ~ 175°C
NRVBS360T3G	ON Semiconductor	DIODE SCHOTTKY 60V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 630mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock5,824	60V	3A	630mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	30µA @ 60V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
DA3X101K0L	Panasonic Electronic Components	DIODE GEN PURP 80V 100MA MINI3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 100nA @ 80V Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Operating Temperature - Junction: 150°C (Max)	Package: TO-236-3, SC-59, SOT-23-3	Stock85,206	80V	100mA (DC)	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	3ns	100nA @ 80V	1.2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G3-B	150°C (Max)
1N914BWT	Fairchild/ON Semiconductor	DIODE GEN PURP 75V 200MA SOD523F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 5µA @ 75V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523F Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-79, SOD-523F	Stock651,438	75V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	5µA @ 75V	4pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523F	SOD-523F	-55°C ~ 150°C
FR1J	SMC Diode Solutions	DIODE GEN PURP 600V 1A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-50°C ~ 150°C
ACDBMHT340-HF	Comchip Technology	AUTOMOTIVE DIODE SCHOTTKY 40V 3A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 160pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123HT Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	40 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	160pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123HT	-55°C ~ 125°C
GP60160B-BP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1600 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1600 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 150°C
XBF10A60S-G	Torex Semiconductor Ltd	DIODE GEN PURP 600V 1A SMAF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: 150°C	Package: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	150°C
ER3KBFL-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 21pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	800 V	3A	1.85 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 800 V	21pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
40HFR60	Solid State Inc.	DIODE GEN PURP 600V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 40 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	40A	1.3 V @ 40 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 600 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
MBRAD545H	Taiwan Semiconductor Corporation	5A, 45V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 45 V Capacitance @ Vr, F: 302pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock13,500	45 V	5A	700 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 45 V	302pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	ThinDPAK	-55°C ~ 150°C
S3KBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	800 V	3A	1.15 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 800 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CMPD400-BK	Central Semiconductor Corp	DIODE GEN PURP 90V 100MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 3.49 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 90 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	90 V	100mA	3.49 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	300 nA @ 90 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
PG5404_R2_00001	Panjit International Inc.	DIODE GEN PURP 400V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock3,693	400 V	3A	1.2 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
PG201R_R2_00001	Panjit International Inc.	DIODE GEN PURP 100V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 100 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
JANS1N5621US	Microchip Technology	DIODE GEN PURP 800V 1A A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	800 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	-	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C