Page 1664 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RGP10KEHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AL

Package: DO-204AL, DO-41, Axial

Stock5,008
RM35HG-34S
Powerex Inc.

DIODE GEN PURP 1.7KV 35A TO264-3

Package: TO-264-3, TO-264AA

Stock3,104
GP2D015A120A
Global Power Technologies Group

SIC SCHOTTKY RECTIFIER

Package: TO-220-2

Stock6,752
VS-40HFLR40S02
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 40A DO203AB

Package: DO-203AB, DO-5, Stud

Stock7,728
MUR2505R
GeneSiC Semiconductor

DIODE GEN PURP REV 50V 25A DO4

Package: DO-203AA, DO-4, Stud

Stock3,008
1N1200AR
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Package: DO-203AA, DO-4, Stud

Stock3,808
SF2006G C0G
TSC America Inc.

DIODE, SUPER FAST, 20A, 400V, 35

Package: TO-220-3

Stock4,272
SRA8100 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Package: TO-220-2

Stock3,952
UF5407-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

Package: DO-201AD, Axial

Stock46,800
SS36L RVG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 6

Package: DO-219AB

Stock5,424
FSV2060L
Fairchild/ON Semiconductor

DIODE RECT SCHOTKY 60V 20A TO277

Package: TO-277, 3-PowerDFN

Stock5,600
VS-2EFH02HM3/I
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO219AB

Package: DO-219AB

Stock3,104
VS-HFA25TB60-N3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 25A TO220AC

Package: TO-220-2

Stock21,336
RF08L6STE25
Rohm Semiconductor

DIODE GEN PURP 600V 800MA PMDS

Package: DO-214AC, SMA

Stock84,000
VS-MBRB1635PBF
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 16A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock23,946
SCS210AJHRTLL
Rohm Semiconductor

DIODE SIL CARB 650V 10A TO263AB

Package: -

Stock2,853
MBRD380
SMC Diode Solutions

DIODE SCHOTTKY 80V 3A DPAK

Package: -

Request a Quote
1N5408KR
Diotec Semiconductor

IC

Package: -

Request a Quote
NHP420LFST1G
onsemi

DIODE GEN PURP 200V 4A LFPAK4

Package: -

Request a Quote
S2JH
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 2A DO214AA

Package: -

Stock16,314

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP10KEHE3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock5,008	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RM35HG-34S	Powerex Inc.	DIODE GEN PURP 1.7KV 35A TO264-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 5V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 100µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-264-3, TO-264AA	Stock3,104	1700V	35A	5V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	100µA @ 1700V	-	Through Hole	TO-264-3, TO-264AA	-	-40°C ~ 150°C
GP2D015A120A	Global Power Technologies Group	SIC SCHOTTKY RECTIFIER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 1200V Capacitance @ Vr, F: 952pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock6,752	1200V	50A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	-	30µA @ 1200V	952pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
VS-40HFLR40S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.95V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 100µA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock7,728	400V	40A	1.95V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	100µA @ 400V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
MUR2505R	GeneSiC Semiconductor	DIODE GEN PURP REV 50V 25A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock3,008	50V	25A	1V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-55°C ~ 150°C
1N1200AR	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-203AA, DO-4, Stud	Stock3,808	100V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
SF2006G C0G	TSC America Inc.	DIODE, SUPER FAST, 20A, 400V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock4,272	400V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SRA8100 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2	Stock3,952	100V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
UF5407-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 36pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock46,800	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	36pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SS36L RVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 6 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock5,424	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
FSV2060L	Fairchild/ON Semiconductor	DIODE RECT SCHOTKY 60V 20A TO277 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 600mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 320µA @ 60V Capacitance @ Vr, F: 771pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-277, 3-PowerDFN	Stock5,600	60V	20A	600mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	320µA @ 60V	771pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 150°C
VS-2EFH02HM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-219AB	Stock3,104	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 200V	-	Surface Mount	DO-219AB	DO-219AB (SMF)	-65°C ~ 175°C
VS-HFA25TB60-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 25A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 25A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock21,336	600V	25A	1.7V @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
RF08L6STE25	Rohm Semiconductor	DIODE GEN PURP 600V 800MA PMDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max)	Package: DO-214AC, SMA	Stock84,000	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	70ns	10µA @ 600V	-	Surface Mount	DO-214AC, SMA	PMDS	150°C (Max)
VS-MBRB1635PBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 16A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock23,946	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
SCS210AJHRTLL	Rohm Semiconductor	DIODE SIL CARB 650V 10A TO263AB Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 600 V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: 175°C (Max)	Package: -	Stock2,853	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB	175°C (Max)
MBRD380	SMC Diode Solutions	DIODE SCHOTTKY 80V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 80 V Capacitance @ Vr, F: 250pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	80 V	3A	750 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	250pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
1N5408KR	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 1 kV Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 175°C	Package: -	Request a Quote	1000 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 1 kV	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-50°C ~ 175°C
NHP420LFST1G	onsemi	DIODE GEN PURP 200V 4A LFPAK4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 500 nA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Supplier Device Package: LFPAK4 (5x6) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	200 V	4A	950 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 200 V	-	Surface Mount	SOT-1023, 4-LFPAK	LFPAK4 (5x6)	-55°C ~ 175°C
S2JH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock16,314	600 V	2A	1.15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 600 V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
PU1BLS	Taiwan Semiconductor Corporation	25NS, 1A, 100V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock60,000	100 V	1A	930 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 100 V	19pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
S1J-F	SMC Diode Solutions	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2.5 µs	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 175°C
SR508-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 80 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	80 V	5A	850 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	200pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-50°C ~ 150°C
TUAS3DH	Taiwan Semiconductor Corporation	3A, 200V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 27pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC4.6U) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock18,000	200 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 200 V	27pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC4.6U)	-55°C ~ 150°C
USL1B	Diotec Semiconductor	DIODE GEN PURP 100V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F (SMF) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 100 V	-	Surface Mount	SOD-123F	SOD-123F (SMF)	-50°C ~ 150°C
SS220FL-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SMA-FL) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	2A	900 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 µA @ 200 V	-	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SMA-FL)	-55°C ~ 150°C
JANTXV1N6942UTK3AS-TR	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 45 V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	45 V	150A	460 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	7000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
JANTXV1N3168	Microchip Technology	DIODE GP 400V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 400 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	400 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 400 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C