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Vishay Semiconductor Diodes Division |
DIODE FAST RECOVERY 8A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,992 |
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200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock6,704 |
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100V | 10A | 770mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Infineon Technologies Industrial Power and Controls Americas |
RECTIFIER DIODE 100V 400A
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,320 |
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- | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 180V 100MA DO7
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 180V
- Current - Average Rectified (Io): 100mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 180V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AA, DO-7, Axial
- Supplier Device Package: DO-7
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AA, DO-7, Axial |
Stock5,376 |
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180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE RECT 35V 10A D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 35V
- Capacitance @ Vr, F: 900pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,216 |
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35V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 35V | 900pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 810mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,208 |
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80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 50V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock7,440 |
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50V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 150V 1.9A SOD57
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1.9A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-57, Axial |
Stock5,264 |
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150V | 1.9A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | - | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 9
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock7,600 |
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90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Micro Commercial Co |
2A SILICON RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,032 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 400V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock5,792 |
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400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 2A, 4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-204AC, DO-15, Axial |
Stock2,256 |
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40V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 200V 700MA MICROSMP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 1.08V @ 700mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 780ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: MicroSMP
- Supplier Device Package: MicroSMP
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: MicroSMP |
Stock4,720 |
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200V | 700mA | 1.08V @ 700mA | Standard Recovery >500ns, > 200mA (Io) | 780ns | 1µA @ 200V | - | Surface Mount | MicroSMP | MicroSMP | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 85V 215MA SOD323
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 85V
- Current - Average Rectified (Io): 215mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5nA @ 75V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock2,416 |
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85V | 215mA | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5nA @ 75V | 1.5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1000V 3.0A DO-214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 26pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock3,024 |
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1000V | 2A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2.8µs | 5µA @ 1000V | 26pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE MODULE 600V 500A LP4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 500A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 500A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 115ns
- Current - Reverse Leakage @ Vr: 2.5mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: LP4
- Supplier Device Package: LP4
- Operating Temperature - Junction: -
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Package: LP4 |
Stock6,000 |
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600V | 500A | 1.8V @ 500A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 2.5mA @ 600V | - | Chassis Mount | LP4 | LP4 | - |
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Solid State Inc. |
DIODE GEN PURP 500V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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500 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 500 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
50NS, 10A, 600V, HIGH EFFICIENT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 135pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: SMPC4.6U
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock15,000 |
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600 V | 10A | 1.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | 135pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | SMPC4.6U | -55°C ~ 175°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 200MA SOT323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 25 V
- Capacitance @ Vr, F: 20pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
- Operating Temperature - Junction: 150°C
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Package: - |
Stock26,808 |
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40 V | 200mA | 550 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 500 nA @ 25 V | 20pF @ 1V, 1MHz | Surface Mount | SC-70, SOT-323 | SOT-323 | 150°C |
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Microchip Technology |
DIODE GEN PURP 400V 1A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | Through Hole | A, Axial | A, Axial | -65°C ~ 200°C |
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Comchip Technology |
DIODE GEN PURP 50V 5A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 5A | 1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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onsemi |
DIODE GP 120V 200MA SOT23-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 90 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C (Max)
|
Package: - |
Request a Quote |
|
120 V | 200mA | 1.25 V @ 400 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 90 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Microchip Technology |
DIODE SCHOTTKY 45V 10A U3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 45 V
- Capacitance @ Vr, F: 400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, No Lead
- Supplier Device Package: U3 (SMD-0.5)
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 10A | 880 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 45 V | 400pF @ 5V, 1MHz | Surface Mount | 3-SMD, No Lead | U3 (SMD-0.5) | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
600 V | 1A | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 600 V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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MDD |
DIODE GEN PURP 400V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
400 V | 3A | 1.25 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.8KV 104A PB20-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800 V
- Current - Average Rectified (Io): 104A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: BG-PB20-1
- Operating Temperature - Junction: -40°C ~ 135°C
|
Package: - |
Request a Quote |
|
1800 V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1800 V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
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Taiwan Semiconductor Corporation |
35NS, 8A, 400V, SUPER FAST RECOV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock3,000 |
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400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 400 V | 60pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GP 200V 1A DO214AA HSMB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA, HSMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 5 µA @ 200 V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA, HSMB | -55°C ~ 150°C |