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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 85A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 100µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock3,376 |
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800V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 800V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 800V 85A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 180°C
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Package: DO-203AB, DO-5, Stud |
Stock7,216 |
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800V | 85A | 1.1V @ 85A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 180°C |
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Sanken |
DIODE GEN PURP 800V 500MA AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 2V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock3,552 |
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800V | 500mA | 2V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 3A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock5,168 |
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200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 2A, 600V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock5,504 |
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600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 600V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 70V 200MA SOT23-3
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock120,000 |
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70V | 200mA (DC) | 1.1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO-247 L
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 68ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock2,864 |
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600V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 68ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 1A, 200V, 25N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, Flat Lead
- Supplier Device Package: Micro SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: 2-SMD, Flat Lead |
Stock2,912 |
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200V | 1A | 1.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 3pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
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Comchip Technology |
DIODE GEN PURP 1000V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock23,844 |
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1000V | 2A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 100V DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock23,760 |
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100V | - | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2A SOD57
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4µs
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: 40pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SOD-57, Axial
- Supplier Device Package: SOD-57
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-57, Axial |
Stock181,752 |
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800V | 2A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 4µs | 1µA @ 800V | 40pF @ 0V, 1MHz | Through Hole | SOD-57, Axial | SOD-57 | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 800V 5A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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800 V | 5A | 1.3 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOD80
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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75 V | 250mA | 1 V @ 10 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 5 µA @ 75 V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 200°C |
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Bourns Inc. |
DIODE GEN PURP 800V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 5 µA @ 800 V | 8.2pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | - |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 4A | 1.85 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
75NS, 1.5A, 1000V, HIGH EFFICIEN
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock39,000 |
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1000 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 144 ns
- Current - Reverse Leakage @ Vr: 55 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock23,970 |
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1200 V | 8A | 2.55 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 144 ns | 55 µA @ 1200 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 12A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock9,000 |
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1000 V | 12A | - | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | 78pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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onsemi |
SS SOT23 GP XSTR SPCL TR
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
1A, 100V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 830 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 36pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1A | 830 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10 µA @ 100 V | 36pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock2,850 |
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400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 400 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 5A DO214AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 5A | 550 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 400V 15A TO254
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 320 V
- Capacitance @ Vr, F: 150pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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400 V | 15A | 1.55 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 50 µA @ 320 V | 150pF @ 10V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | - |
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onsemi |
REC SURGE SUP SPECIAL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1A | 970 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 5 µA @ 100 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Nexperia USA Inc. |
PNE20050EP/SOD128/FLATPOWER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 200 V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Operating Temperature - Junction: 175°C
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Package: - |
Request a Quote |
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200 V | 5A | 950 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 200 V | 55pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 175°C |
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Microchip Technology |
DIODE GEN PURP 600V 1A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2 µs
- Current - Reverse Leakage @ Vr: 500 nA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
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600 V | 1A | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 600 V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 200°C |
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Solid State Inc. |
DIODE GEN PURP 100V 40A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
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100 V | 40A | 1.19 V @ 90 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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