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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock6,336 |
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200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 100ps
- Current - Reverse Leakage @ Vr: 100nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock3,328 |
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70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SOT23-3 | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 2.5KV 910A B-43
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2500V
- Current - Average Rectified (Io): 910A
- Voltage - Forward (Vf) (Max) @ If: 1.85V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 50mA @ 2500V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: B-43, PUK
- Supplier Device Package: B-43, Hockey PUK
- Operating Temperature - Junction: -
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Package: B-43, PUK |
Stock2,320 |
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2500V | 910A | 1.85V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 2500V | - | Stud Mount | B-43, PUK | B-43, Hockey PUK | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 15µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock5,056 |
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200V | 6A | 1.4V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 15µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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IXYS |
DIODE GEN PURP 300V 60A TO263
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.43V @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,856 |
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300V | 60A | 1.43V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 175°C |
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WeEn Semiconductors |
BYV10ED-600P/DPAK/REEL 13" Q1/
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock2,768 |
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600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock5,840 |
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400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO213AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF (Glass)
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AB, MELF (Glass) |
Stock4,864 |
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100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 1000V, 500NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,224 |
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- | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 50V 1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AL, DO-41, Axial |
Stock2,608 |
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50V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 40A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.95V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock5,632 |
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600V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2µA @ 60V
- Capacitance @ Vr, F: 93pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-220AA |
Stock5,472 |
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60V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 60V | 93pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 600V 2A 2114
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 14pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, No Lead
- Supplier Device Package: 2114/DO-214AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: 2-SMD, No Lead |
Stock5,328 |
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600V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 600V | 14pF @ 4V, 1MHz | Surface Mount | 2-SMD, No Lead | 2114/DO-214AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A TO252AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 145ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock36,000 |
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600V | 5A | 1.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 145ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Solid State Inc. |
DIODE GEN PURP 200V 100A DO8
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-8
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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200 V | 100A | 1.2 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 200 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-8 | -65°C ~ 200°C |
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SMC Diode Solutions |
DIODE GEN PURP 400V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 300MA SOD80
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Stock14,532 |
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50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 200°C |
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Microchip Technology |
STD RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A SOD128
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock8,190 |
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600 V | 2A | 1.7 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 600 V | 15pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 1A MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | - | Surface Mount | DO-213AB, MELF | MELF | -65°C ~ 175°C |
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Renesas Electronics Corporation |
RECTIFIER DIODE, 30A, 600V
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 65pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
1000 V | 5A | 1.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay |
5A, 100V, SLIM SMA TRENCH SKY RE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2.2A
- Voltage - Forward (Vf) (Max) @ If: 710 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 210 µA @ 100 V
- Capacitance @ Vr, F: 550pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: DO-221AC (SlimSMA)
- Operating Temperature - Junction: -40°C ~ 150°C
|
Package: - |
Request a Quote |
|
100 V | 2.2A | 710 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 210 µA @ 100 V | 550pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | DO-221AC (SlimSMA) | -40°C ~ 150°C |
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Microchip Technology |
FAST RECOVERY RECTIFIER
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 15 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 50A | 1.4 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 15 µA @ 50 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock10,500 |
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200 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 40pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 600V 150A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
600 V | 150A | 1.1 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 600 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 12A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 78pF @ 4V, 1MHz
- Mounting Type: -
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock57 |
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1000 V | 12A | 1.1 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | 78pF @ 4V, 1MHz | - | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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IXYS |
DIODE SCHOTTKY 25V 6A TO252AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 25 V
- Capacitance @ Vr, F: 639pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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25 V | 6A | 400 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 25 V | 639pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 150°C |