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Vishay Semiconductor Diodes Division |
DIODE GEN PURPOSE DO-204AL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock4,240 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.5KV 2A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1500V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20µs
- Current - Reverse Leakage @ Vr: 5µA @ 1500V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AC, DO-15, Axial |
Stock5,440 |
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1500V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 20µs | 5µA @ 1500V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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IXYS |
DIODE SCHOTTKY 250V 12A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 250V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 250V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock6,192 |
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250V | 12A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 250V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 500nA @ 1000V
- Capacitance @ Vr, F: 15pF @ 12V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: A, Axial |
Stock7,328 |
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1000V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 500nA @ 1000V | 15pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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IXYS |
DIODE GEN PURP 2.2KV 30A I4PAC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40µA @ 2200V
- Capacitance @ Vr, F: 7pF @ 700V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-251-2, IPak
- Supplier Device Package: i4-PAC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-251-2, IPak |
Stock3,184 |
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2200V | 30A | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Through Hole | TO-251-2, IPak | i4-PAC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 16A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 35V
- Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,680 |
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45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE SCHOTTKY 50V 3A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock3,728 |
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50V | 3A | 750mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, 5A, 800V, AEC-Q101, DO-21
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock6,432 |
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800V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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ON Semiconductor |
IC DIODE SCHOTTKY 10A 60V D2PAK
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock99,348 |
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60V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-201AD, Axial |
Stock99,744 |
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400V | 3A | 1.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 200V DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 975mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,176 |
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200V | - | 975mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1300V 1A DO214AC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1300V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 1300V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock3,728 |
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1300V | 1A (DC) | 1.9V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1300V | 9pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 200V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25nA @ 175V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,736 |
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200V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 175V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 600V 10A TO220F
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 2.3V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120ns
- Current - Reverse Leakage @ Vr: 100µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock82,728 |
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600V | 10A | 2.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500ns
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SOD-123F |
Stock25,734 |
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1000V | 1A | 1.3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 900V 500MA M-FLAT
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 900 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 900 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: M-FLAT (2.4x3.8)
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: - |
Stock8,283 |
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900 V | 500mA | 2.5 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 900 V | - | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Microchip Technology |
RECTIFIER
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 125A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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100 V | 125A | 1.2 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 µA @ 100 V | - | Stud Mount | DO-205AA, DO-8, Stud | DO-205AA (DO-8) | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 8A TO220FP-2
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220FP-2
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 8A | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 10 µA @ 400 V | 80pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FP-2 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 120V 15A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 120 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: - |
Request a Quote |
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120 V | 15A | 840 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 800 µA @ 120 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Good-Ark Semiconductor |
RECTIFIER, SCHOTTKY, LOW VF, 1A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 28pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: iSGA (SOD-123HS)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock17,925 |
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100 V | 1A | 800 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 µA @ 100 V | 28pF @ 4V, 1MHz | Surface Mount | SOD-123H | iSGA (SOD-123HS) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 100V 1A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (HSMA)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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100 V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (HSMA) | -50°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 400V 16A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 16 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 16A | 1.2 V @ 16 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 50V 10A R-6
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock6,129 |
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50 V | 10A | 550 mV @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 50 V | - | Through Hole | R-6, Axial | R-6 | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 150V 1A DO219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -40°C ~ 175°C
|
Package: - |
Request a Quote |
|
150 V | 1A | 1.22 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | 60pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 45V 30A DO4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
45 V | 30A | 630 mV @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 45 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -55°C ~ 175°C |
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Diotec Semiconductor |
IC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 150 V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
150 V | 200mA | 1.25 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 150 V | 5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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Vishay |
SWITCHING DIODE GENPURP SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: 150°C
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Package: - |
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200 V | 300mA | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 1.5pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 150°C |
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Microchip Technology |
RECTIFIER UFR,FRR
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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