Page 1720 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

DSM10G-TR-E
ON Semiconductor

DIODE GEN PURP 600V 1A SMD

Package: 2-SMD, J-Lead

Stock408,000
1N4149_T50R
Fairchild/ON Semiconductor

DIODE GEN PURP 100V 500MA DO35

Package: DO-204AH, DO-35, Axial

Stock6,704
R7220206HSOO
Powerex Inc.

DIODE MODULE 200V 650A DO200AB

Package: DO-200AB, B-PUK

Stock5,584
VS-87HFLR60S02
Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Package: DO-203AB, DO-5, Stud

Stock3,808
VI20100S-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-262AA

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock3,424
ES2DHE3J_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

Package: DO-214AA, SMB

Stock2,192
ZHCS400QTA
Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

Package: SC-76, SOD-323

Stock7,232
ESH2B-E3/52T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

Package: DO-214AA, SMB

Stock276,000
SS3P6-M3/85A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO220AA

Package: DO-220AA

Stock3,040
SS14HR3G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Package: DO-214AC, SMA

Stock6,640
RB520CS3002LYL
Nexperia USA Inc.

DIODE SCHOTTKY 30V 200MA 2DFN

Package: SOD-882

Stock2,320
1N5417
Microsemi Corporation

DIODE GEN PURP 200V 3A AXIAL

Package: Axial

Stock6,552
DSI30-08A
IXYS

DIODE GEN PURP 800V 30A TO220AC

Package: TO-220-2

Stock6,288
UPS540E3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 5A POWERMITE3

Package: Powermite?3

Stock80,004
1N3879
GeneSiC Semiconductor

DIODE GEN PURP 50V 6A DO4

Package: DO-203AA, DO-4, Stud

Stock19,152
RB551V-30-TP
Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOD323

Package: SC-76, SOD-323

Stock192,690
RGP02-20E-BULK
EIC SEMICONDUCTOR INC.

DIODE GEN PURP 2KV 500MA DO41

Package: -

Request a Quote
CR250-4-BK
Central Semiconductor Corp

DIODE GEN PURP 4KV 200MA DO15

Package: -

Request a Quote
SB820D_R2_00001
Panjit International Inc.

DIODE SCHOTTKY 20V 8A TO263

Package: -

Request a Quote
BAV19W-7-G
Diodes Incorporated

DIODE GEN PURPOSE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
DSM10G-TR-E	ON Semiconductor	DIODE GEN PURP 600V 1A SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SMD Operating Temperature - Junction: 150°C (Max)	Package: 2-SMD, J-Lead	Stock408,000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	2-SMD, J-Lead	SMD	150°C (Max)
1N4149_T50R	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	Package: DO-204AH, DO-35, Axial	Stock6,704	100V	500mA	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	25nA @ 20V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
R7220206HSOO	Powerex Inc.	DIODE MODULE 200V 650A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 650A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock5,584	200V	650A	2.05V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
VS-87HFLR60S02	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock3,808	60V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VI20100S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20A 100V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 900mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock3,424	100V	20A	900mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
ES2DHE3J_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock2,192	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	10µA @ 50V	18pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ZHCS400QTA	Diodes Incorporated	DIODE SCHOTTKY 40V 400MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 30V Capacitance @ Vr, F: 20pF @ 25V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-76, SOD-323	Stock7,232	40V	1A	780mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 30V	20pF @ 25V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
ESH2B-E3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AA, SMB	Stock276,000	100V	2A	930mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SS3P6-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-220AA	Stock3,040	60V	3A	780mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
SS14HR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AC, SMA	Stock6,640	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
RB520CS3002LYL	Nexperia USA Inc.	DIODE SCHOTTKY 30V 200MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 450mV @ 10mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500nA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: DFN1006-2 Operating Temperature - Junction: 150°C (Max)	Package: SOD-882	Stock2,320	30V	200mA	450mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 10V	-	Surface Mount	SOD-882	DFN1006-2	150°C (Max)
1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: Axial	Stock6,552	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	Axial	B, Axial	-65°C ~ 175°C
DSI30-08A	IXYS	DIODE GEN PURP 800V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.29V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 800V Capacitance @ Vr, F: 10pF @ 400V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C	Package: TO-220-2	Stock6,288	800V	30A	1.29V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	40µA @ 800V	10pF @ 400V, 1MHz	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
UPS540E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 5A POWERMITE3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 540mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: Powermite?3 Supplier Device Package: Powermite 3 Operating Temperature - Junction: -55°C ~ 125°C	Package: Powermite?3	Stock80,004	40V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	250pF @ 4V, 1MHz	Surface Mount	Powermite?3	Powermite 3	-55°C ~ 125°C
1N3879	GeneSiC Semiconductor	DIODE GEN PURP 50V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-203AA, DO-4, Stud	Stock19,152	50V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
RB551V-30-TP	Micro Commercial Co	DIODE SCHOTTKY 20V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock192,690	20V	500mA	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
RGP02-20E-BULK	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 2KV 500MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2000 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 2000 V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	2000 V	500mA	1.8 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 2000 V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
CR250-4-BK	Central Semiconductor Corp	DIODE GEN PURP 4KV 200MA DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	4000 V	200mA	5 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 4000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
SB820D_R2_00001	Panjit International Inc.	DIODE SCHOTTKY 20V 8A TO263 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	20 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 20 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 125°C
BAV19W-7-G	Diodes Incorporated	DIODE GEN PURPOSE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
RBR2LAM40ATFTR	Rohm Semiconductor	DIODE SCHOTTKY 40V 2A PMDTM Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 150°C (Max)	Package: -	Stock18,834	40 V	2A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	-	Surface Mount	SOD-128	PMDTM	150°C (Max)
D1481N68TXPSA1	Infineon Technologies	DIODE GEN PURP 6.8KV 2200A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6800 V Current - Average Rectified (Io): 2200A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 6800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	6800 V	2200A	1.8 V @ 2500 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 6800 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C
V8PM63-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 4.3A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.3A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 60 V Capacitance @ Vr, F: 1460pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Stock13,500	60 V	4.3A	640 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 60 V	1460pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
PG208_R2_00001	Panjit International Inc.	DIODE GEN PURP 800V 2A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	800 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 800 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SICPT2060Y-BP	Micro Commercial Co	SCHOTTKY DIODES Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 25 µA @ 650 V Capacitance @ Vr, F: 1157pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 650 V	1157pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
B140AF-13	Diodes Incorporated	DIODE SCHOTTKY 40V 1A SMAF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock28,035	40 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	50pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF	-55°C ~ 150°C
MUR260GPL-AP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
C3D16065D1	Wolfspeed, Inc.	DIODE SIL CARBIDE 650V TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 95 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock969	650 V	-	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	-	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C