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Micro Commercial Co |
DIODE GEN PURP 400V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -
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Package: DO-204AL, DO-41, Axial |
Stock3,680 |
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400V | 1A (DC) | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Micro Commercial Co |
DIODE SCHOTTKY 20V 1A SOD123HE
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-123H |
Stock2,416 |
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20V | 1A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 1.1KV 1A D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 500nA @ 1100V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock7,680 |
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1100V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 500nA @ 1100V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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IXYS |
DIODE SCHOTTKY 300V 11A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 2V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.3mA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,360 |
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300V | 11A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.3mA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 40V 30MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 30mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 370mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 30V
- Capacitance @ Vr, F: 2pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: SC-76, SOD-323 |
Stock1,241,604 |
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40V | 30mA (DC) | 370mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -40°C ~ 125°C |
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Powerex Inc. |
DIODE GEN PURP 1KV 250A DO205
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 250A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: DO-205AB, DO-9, Stud |
Stock2,976 |
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1000V | 250A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | - | -40°C ~ 150°C |
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Powerex Inc. |
DIODE MODULE 1KV 800A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 800A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10µs
- Current - Reverse Leakage @ Vr: 50mA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock5,824 |
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1000V | 800A | 1.8V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 10µs | 50mA @ 1000V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 600V 6A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 2.1V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 27ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,392 |
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600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 27ns | 50µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Sanken |
DIODE GEN PURP 400V 2A SJP
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: SJP
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock2,256 |
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400V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | 2-SMD, J-Lead | SJP | -40°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 1.5A SJP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock3,616 |
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60V | 1.5A | 700mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2000V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 3.5V @ 250mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 2000V
- Capacitance @ Vr, F: 3pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,048 |
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2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | 3pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Nexperia USA Inc. |
PMEG4005CEJ/SOD323/SOD2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock7,600 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-203AA, DO-4, Stud |
Stock5,552 |
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600V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 6A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock3,792 |
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150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Power Integrations |
DIODE SCHOTTKY 600V 8A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 3.15V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 11.1ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 |
Stock6,432 |
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600V | 8A | 3.15V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 11.1ns | 250µA @ 600V | 25pF @ 10V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 150°C (Max) |
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SMC Diode Solutions |
DIODE GEN PURP 400V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock35,988 |
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400 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 5 µA @ 400 V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -65°C ~ 175°C |
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Harris Corporation |
DIODE AVALANCHE 100V 15A TO220AC
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 15A | 1.05 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE SCHOTTKY 30V 2A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock2,298 |
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30 V | 2A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 30 V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 125°C |
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Comchip Technology |
DIODE SCHOTTKY 60V 5A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 60 V
- Capacitance @ Vr, F: 300pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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60 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 60 V | 300pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 125V 200MA SQ-MELF B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 125 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 1 nA @ 125 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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125 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 500MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 30 V
- Capacitance @ Vr, F: 50pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock1,107,984 |
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40 V | 500mA | 470 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 50pF @ 1V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 1.5A | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 40V 350MA SOD123
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock55,893 |
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40 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 30 V | - | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 200V 1A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 1A | 900 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 200 V | 80pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SIL CARBIDE 650V 6A LPTL
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 650 V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPTL
- Operating Temperature - Junction: 175°C (Max)
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Package: - |
Stock891 |
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650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | LPTL | 175°C (Max) |
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Microchip Technology |
DIODE GEN PURP 200V 2A A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 3 µA @ 200 V
- Capacitance @ Vr, F: 80pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A, Axial
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
|
200 V | 2A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 3 µA @ 200 V | 80pF @ 0V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 3A DO214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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150 V | 3A | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 100V 500MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
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100 V | 500mA | 1.25 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |