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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 7.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock3,296 |
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35V | 7.5A | 630mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 7.5A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 35V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-220-2 |
Stock2,288 |
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35V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A GP20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: GP20
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AA, DO-27, Axial |
Stock7,360 |
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200V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE HYPERFAST 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 2.45V @ 15A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,864 |
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600V | 15A | 2.45V @ 15A | Standard Recovery >500ns, > 200mA (Io) | - | 15µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -65°C ~ 175°C |
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Sanken |
DIODE GEN PURP 800V 1.2A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock7,920 |
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800V | 1.2A | 920mV @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | - | Through Hole | Axial | Axial | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY SMB
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,008 |
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- | - | - | - | - | - | - | - | - | - | - |
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TSC America Inc. |
DIODE, 3A, 50V, DO-214AB (SMC)
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock5,824 |
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50V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 50V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, ULTRA FAST, 0.6A, 150V, 1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 600mA
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 600mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock5,664 |
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150V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 150V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2.4A DO220AA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2.4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 630mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 900µA @ 60V
- Capacitance @ Vr, F: 250pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-220AA
- Supplier Device Package: DO-220AA (SMP)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-220AA |
Stock2,848 |
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60V | 2.4A (DC) | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 900µA @ 60V | 250pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 2A DO15
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-204AC, DO-15, Axial |
Stock5,712 |
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60V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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TSC America Inc. |
DIODE, 1A, 50V, AEC-Q101, SUB SM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8µs
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-219AB |
Stock3,328 |
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50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 50V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
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TSC America Inc. |
DIODE, SWITCHING & ARRAY, A, 200
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 100nA @ 150V
- Capacitance @ Vr, F: 5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SC-76, SOD-323 |
Stock6,704 |
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150V | 200mA | 1.25V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 75V 150MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 720mV @ 5mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 8ns
- Current - Reverse Leakage @ Vr: 5µA @ 75V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock5,040 |
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75V | 150mA | 720mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Rohm Semiconductor |
DIODE GEN PURP 430V 20A TO220FN
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 430V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25ns
- Current - Reverse Leakage @ Vr: 10µA @ 430V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220FN
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-3 Full Pack |
Stock18,372 |
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430V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 430V | - | Through Hole | TO-220-3 Full Pack | TO-220FN | 150°C (Max) |
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Central Semiconductor Corp |
DIODE SW 100V 200MA 1=20PCS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 25nA @ 20V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: Die |
Stock5,952 |
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100V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 40V 1A SOD993
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 505mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.1ns
- Current - Reverse Leakage @ Vr: 1250µA @ 40V
- Capacitance @ Vr, F: 75pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 2-XDFN
- Supplier Device Package: DSN1006-2
- Operating Temperature - Junction: 150°C (Max)
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Package: 2-XDFN |
Stock7,312 |
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40V | 1A | 505mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 3.1ns | 1250µA @ 40V | 75pF @ 1V, 1MHz | Surface Mount | 2-XDFN | DSN1006-2 | 150°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 1KV 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,576 |
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1000V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Fairchild/ON Semiconductor |
DIODE GEN PURP 100V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: DO-214AB, SMC |
Stock1,325,964 |
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100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3.5A SOD64
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3.5A
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: SOD-64, Axial
- Supplier Device Package: SOD-64
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: SOD-64, Axial |
Stock139,920 |
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600V | 3.5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A SFLAT
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 510mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 40V
- Capacitance @ Vr, F: 47pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: S-FLAT (1.6x3.5)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: SOD-123F |
Stock552,312 |
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40V | 1A | 510mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 47pF @ 10V, 1MHz | Surface Mount | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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SMC Diode Solutions |
DIODE GEN PURP 50V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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50 V | 1.5A | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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KYOCERA AVX |
SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 300 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
|
20 V | 300mA | 500 mV @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 20 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
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Panjit International Inc. |
DIODE GEN PURP 600V 3A SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 63pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: SMC (DO-214AB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,397 |
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600 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 600 V | 63pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 100V 1A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock19,398 |
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100 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 100 V | 7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |
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Comchip Technology |
DIODE SCHOTTKY 20V 1A 0805
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 20 V
- Capacitance @ Vr, F: 115pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0805 (2012 Metric)
- Supplier Device Package: 0805
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
|
20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 20 V | 115pF @ 4V, 1MHz | Surface Mount | 0805 (2012 Metric) | 0805 | -55°C ~ 125°C |
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Microchip Technology |
DIODE GP REV 400V 300A DO205AB
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB (DO-9)
- Operating Temperature - Junction: -65°C ~ 200°C
|
Package: - |
Request a Quote |
|
400 V | 300A | 1.25 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 75 µA @ 400 V | - | Stud Mount | DO-205AB, DO-9, Stud | DO-205AB (DO-9) | -65°C ~ 200°C |
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SMC Diode Solutions |
DIODE GEN PURP 300V D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300 V
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 30 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock2,058 |
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300 V | - | 1.3 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 45 ns | 30 µA @ 30 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 50V 300MA D AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: D, Axial
- Supplier Device Package: D-5D
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 300mA | 1 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | - | Through Hole | D, Axial | D-5D | -65°C ~ 175°C |