Page 1750 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

RGP02-17E-M3/54
Vishay Semiconductor Diodes Division

DIODE 0.5A 1700V 300NS DO-204AL

Package: DO-204AL, DO-41, Axial

Stock2,368
8ETU04-1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO262

Package: TO-262-3 Long Leads, I2Pak, TO-262AA

Stock6,624
JANTX1N3595AUR-1
Microsemi Corporation

DIODE GP 125V 150MA DO213AA

Package: DO-213AA

Stock5,616
HSM580J/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 5A DO214AB

Package: DO-214AB, SMC

Stock6,448
SFAF507GHC0G
TSC America Inc.

DIODE, SUPER FAST, 5A, 500V, 35N

Package: TO-220-2 Full Pack

Stock2,976
QH03BZ600
Power Integrations

DIODE GEN PURP 600V 3A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,184
UGB8ATHE3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,320
ES1HL RTG
TSC America Inc.

DIODE, SUPER FAST, 1A, 500V, 35N

Package: DO-219AB

Stock5,392
SS24LHMTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Package: DO-219AB

Stock2,256
S1KL MQG
TSC America Inc.

DIODE, 1A, 800V, SUB SMA

Package: DO-219AB

Stock6,912
BYC5-600,127
WeEn Semiconductors

DIODE GEN PURP 500V 5A TO220AC

Package: TO-220-2

Stock99,036
PMEG2005AEV,115
Nexperia USA Inc.

DIODE SCHOTTKY 20V 500MA SOT666

Package: SOT-563, SOT-666

Stock34,332
STTH8S06D
STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

Package: TO-220-2

Stock27,996
RURP8100
Fairchild/ON Semiconductor

DIODE GEN PURP 1KV 8A TO220AC

Package: TO-220-2

Stock115,596
HS3A
Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 3A DO214AB

Package: -

Request a Quote
JANTX1N3170
Microchip Technology

DIODE GP 600V 300A DO205AB DO9

Package: -

Request a Quote
VS-E5PH7506L-N3
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 75A TO247AD

Package: -

Stock1,050
ZLLS410TA-2477
Diodes Incorporated

DIODE

Package: -

Request a Quote
S4320NL
Microchip Technology

DIODE GEN PURP 200V 150A DO205AA

Package: -

Request a Quote
CDBHA1045-HF
Comchip Technology

DIODE SCHOTTKY 45V 10A TO277B

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RGP02-17E-M3/54	Vishay Semiconductor Diodes Division	DIODE 0.5A 1700V 300NS DO-204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 1700V Capacitance @ Vr, F: 5pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock2,368	1700V	500mA	1.8V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1700V	5pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
8ETU04-1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO262 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262 Operating Temperature - Junction: -65°C ~ 175°C	Package: TO-262-3 Long Leads, I2Pak, TO-262AA	Stock6,624	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262	-65°C ~ 175°C
JANTX1N3595AUR-1	Microsemi Corporation	DIODE GP 125V 150MA DO213AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 920mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 2nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA	Stock5,616	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	2nA @ 125V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
HSM580J/TR13	Microsemi Corporation	DIODE SCHOTTKY 80V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 800mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-214AB, SMC	Stock6,448	80V	5A	800mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 80V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
SFAF507GHC0G	TSC America Inc.	DIODE, SUPER FAST, 5A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2 Full Pack	Stock2,976	500V	5A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
QH03BZ600	Power Integrations	DIODE GEN PURP 600V 3A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9.8ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: 11pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: 150°C (Max)	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,184	600V	3A	3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	9.8ns	250µA @ 600V	11pF @ 10V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	150°C (Max)
UGB8ATHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,320	50V	8A	1V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
ES1HL RTG	TSC America Inc.	DIODE, SUPER FAST, 1A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock5,392	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHMTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock2,256	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KL MQG	TSC America Inc.	DIODE, 1A, 800V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	Package: DO-219AB	Stock6,912	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
BYC5-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 5A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max)	Package: TO-220-2	Stock99,036	500V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	150°C (Max)
PMEG2005AEV,115	Nexperia USA Inc.	DIODE SCHOTTKY 20V 500MA SOT666 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 390mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: 80pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666 Operating Temperature - Junction: 150°C (Max)	Package: SOT-563, SOT-666	Stock34,332	20V	500mA (DC)	390mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	80pF @ 1V, 1MHz	Surface Mount	SOT-563, SOT-666	SOT-666	150°C (Max)
STTH8S06D	STMicroelectronics	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 18ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	Package: TO-220-2	Stock27,996	600V	8A	3.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	18ns	20µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
RURP8100	Fairchild/ON Semiconductor	DIODE GEN PURP 1KV 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-220-2	Stock115,596	1000V	8A	1.8V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	100ns	100µA @ 1000V	-	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
HS3A	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
JANTX1N3170	Microchip Technology	DIODE GP 600V 300A DO205AB DO9 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 700 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	600 V	300A	1.55 V @ 940 A	Standard Recovery >500ns, > 200mA (Io)	-	10 mA @ 700 V	-	Stud Mount	DO-205AB, DO-9, Stud	DO-205AB (DO-9)	-65°C ~ 200°C
VS-E5PH7506L-N3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 75A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 57 ns Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock1,050	600 V	75A	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	57 ns	25 µA @ 600 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
ZLLS410TA-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10 V Current - Average Rectified (Io): 750mA Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 ns Current - Reverse Leakage @ Vr: 6 µA @ 10 V Capacitance @ Vr, F: 37pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	Package: -	Request a Quote	10 V	750mA	580 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	6 µA @ 10 V	37pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
S4320NL	Microchip Technology	DIODE GEN PURP 200V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	200 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
CDBHA1045-HF	Comchip Technology	DIODE SCHOTTKY 45V 10A TO277B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277B Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	45 V	10A	470 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 45 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277B	-55°C ~ 150°C
SE12DTG-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 3.2A SMPD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 3.2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 12 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 20 µA @ 400 V Capacitance @ Vr, F: 90pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Supplier Device Package: SMPD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock12,900	400 V	3.2A	1.15 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	20 µA @ 400 V	90pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), Variant	SMPD	-55°C ~ 175°C
JANTX1N6624-TR	Microchip Technology	DIODE GEN PURP 990V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 990 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 500 nA @ 990 V Capacitance @ Vr, F: 10pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	990 V	1A	1.55 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 nA @ 990 V	10pF @ 10V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 150°C
SK86-3G	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	60 V	8A	550 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 60 V	-	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 150°C
CTLSH1-40M832DS-TR	Central Semiconductor Corp	DIODE SCHOTTKY 40V 1A TLM832DS Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-TDFN Exposed Pad Supplier Device Package: TLM832DS Operating Temperature - Junction: -65°C ~ 150°C	Package: -	Request a Quote	40 V	1A	550 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 40 V	50pF @ 4V, 1MHz	Surface Mount	8-TDFN Exposed Pad	TLM832DS	-65°C ~ 150°C
D2450N07TXPSA1	Infineon Technologies	DIODE GEN PURP 700V 2450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 700 V Current - Average Rectified (Io): 2450A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 700 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	700 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 700 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 180°C
US1M-TP-HF	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	1000 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 1000 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
SBT350-06L	onsemi	RECTIFIER DIODE, SCHOTTKY, 1 PHA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D1800N48TVFXPSA1	Infineon Technologies	DIODE GEN PURP 4.8KV 1800A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4800 V Current - Average Rectified (Io): 1800A Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1500 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 4800 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 160°C	Package: -	Request a Quote	4800 V	1800A	1.32 V @ 1500 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 4800 V	-	Clamp On	DO-200AC, K-PUK	-	-40°C ~ 160°C