Page 1754 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

CLH01(TE16L,Q)
Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A L-FLAT

Package: L-FLAT?

Stock3,248
1N4003GPE-M3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO-204AL

Package: -

Stock6,528
MUR120-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AC

Package: DO-204AC, DO-15, Axial

Stock3,392
IRD3910R
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 30A DO203AB

Package: DO-203AB, DO-5, Stud

Stock6,416
19TQ015STRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 19A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock115,200
VS-10ETF12STRRPBF
Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,304
UG8HT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 8A TO220AC

Package: TO-220-2

Stock5,184
VS-20TQ040S-M3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 20A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock5,152
SS3H9-E3/9AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 3A DO214AB

Package: DO-214AB, SMC

Stock36,000
MBRD3200TR
SMC Diode Solutions

DIODE SCHOTTKY 200V 3A DPAK

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock4,304
HS1AL RTG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 50V,

Package: DO-219AB

Stock5,328
HS1BL MQG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 100V,

Package: DO-219AB

Stock4,496
RS1KLSHRVG
TSC America Inc.

DIODE, FAST, 1.2A, 800V, 300NS,

Package: SOD-123H

Stock3,152
V2P6HM3/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 2A MICROSMP

Package: DO-220AA

Stock6,768
B190B-13-F
Diodes Incorporated

DIODE SCHOTTKY 90V 1A SMB

Package: DO-214AA, SMB

Stock180,000
RL255GTA
SMC Diode Solutions

DIODE GEN PURP 600V 2.5A DO15

Package: DO-204AC, DO-15, Axial

Stock24,840
SBR3M30P1-7
Diodes Incorporated

DIODE SBR 30V 3A POWERDI123

Package: POWERDI?123

Stock461,880
NSVBAT54HT1G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD323

Package: SC-76, SOD-323

Stock340,212
MSASC75W45FV
Microchip Technology

DIODE SCHOTTKY 45V 75A THINKEY4

Package: -

Request a Quote
BA158-TP
Micro Commercial Co

DIODE GEN PURP 600V 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	Package: L-FLAT?	Stock3,248	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 150°C
1N4003GPE-M3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURPOSE DO-204AL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,528	-	-	-	-	-	-	-	-	-	-	-
MUR120-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AC, DO-15, Axial	Stock3,392	200V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
IRD3910R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 30A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 80µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock6,416	100V	30A	1.8V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	80µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
19TQ015STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 19A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 19A Voltage - Forward (Vf) (Max) @ If: 360mV @ 19A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock115,200	15V	19A	360mV @ 19A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 15V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 125°C
VS-10ETF12STRRPBF	Vishay Semiconductor Diodes Division	DIODE RECT 1200V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,304	1200V	10A	1.33V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	310ns	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-40°C ~ 150°C
UG8HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.75V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 30µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-2	Stock5,184	500V	8A	1.75V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	30µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
VS-20TQ040S-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7mA @ 40V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock5,152	40V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 40V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 150°C
SS3H9-E3/9AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 90V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AB, SMC	Stock36,000	90V	3A	800mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 90V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 175°C
MBRD3200TR	SMC Diode Solutions	DIODE SCHOTTKY 200V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 920mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: 100pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock4,304	200V	3A	920mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	100pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
HS1AL RTG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 50V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock5,328	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1BL MQG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 100V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,496	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1KLSHRVG	TSC America Inc.	DIODE, FAST, 1.2A, 800V, 300NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123H	Stock3,152	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
V2P6HM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 2A MICROSMP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 630mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: MicroSMP Operating Temperature - Junction: -40°C ~ 150°C	Package: DO-220AA	Stock6,768	60V	2A	630mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-220AA	MicroSMP	-40°C ~ 150°C
B190B-13-F	Diodes Incorporated	DIODE SCHOTTKY 90V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock180,000	90V	1A	790mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
RL255GTA	SMC Diode Solutions	DIODE GEN PURP 600V 2.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.5µA @ 600V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AC, DO-15, Axial	Stock24,840	600V	2.5A	1.1V @ 2.5A	Standard Recovery >500ns, > 200mA (Io)	-	2.5µA @ 600V	45pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SBR3M30P1-7	Diodes Incorporated	DIODE SBR 30V 3A POWERDI123 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: POWERDI?123 Supplier Device Package: PowerDI? 123 Operating Temperature - Junction: -65°C ~ 175°C	Package: POWERDI?123	Stock461,880	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	POWERDI?123	PowerDI? 123	-65°C ~ 175°C
NSVBAT54HT1G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 25V Capacitance @ Vr, F: 10pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: SC-76, SOD-323	Stock340,212	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
MSASC75W45FV	Microchip Technology	DIODE SCHOTTKY 45V 75A THINKEY4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 750 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™4 Supplier Device Package: ThinKey™4 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	45 V	75A	760 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	750 µA @ 45 V	-	Surface Mount	ThinKey™4	ThinKey™4	-55°C ~ 175°C
BA158-TP	Micro Commercial Co	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
RFN2VWM2STR	Rohm Semiconductor	DIODE GEN PURP 200V 2A PMDE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 990 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	Package: -	Stock6,273	200 V	2A	990 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
SD530S_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	30 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 125°C
CLLR1F-02-BK	Central Semiconductor Corp	DIODE GEN PURP 200V 1A MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 200 V	-	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 175°C
R1800F-AP	Micro Commercial Co	DIODE GEN PURP 1.8KV 500MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1800 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 1800 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	1800 V	500mA	2.4 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	5 µA @ 1800 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SK1080D1	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 80 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	80 V	10A	830 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 80 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-50°C ~ 150°C
MBR120VLSFT1H	onsemi	DIODE SCHOTTKY 20V 1A SOD123FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 340 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 125°C	Package: -	Request a Quote	20 V	1A	340 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 20 V	-	Surface Mount	SOD-123F	SOD-123FL	-65°C ~ 125°C
SS5P9HM3_A-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 90V 5A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 90 V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock19,500	90 V	5A	880 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 90 V	130pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ED506S_S2_00001	Panjit International Inc.	DIODE GEN PURP 600V 5A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock9,000	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C