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Microsemi Corporation |
DIODE GEN PURP 880V 1A D5A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 880V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 500nA @ 880V
- Capacitance @ Vr, F: 10pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: D-5A
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock7,888 |
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880V | 1A | 1.55V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 500nA @ 880V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 150°C |
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Power Integrations |
DIODE SCHOTTKY 600V 8A TO220FP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 2.94V @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 34ns
- Current - Reverse Leakage @ Vr: 250µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220 Full Pack
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-220-2 Full Pack |
Stock4,096 |
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600V | 8A | 2.94V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 34ns | 250µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220 Full Pack | 150°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,288 |
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600V | 1A | 2.5V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 1000V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock3,920 |
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1000V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 1KV 6A R6
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: R6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: R6, Axial |
Stock809,220 |
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1000V | 6A | 950mV @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | R6, Axial | R-6 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 1.3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 1.3A
- Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: A, Axial
- Supplier Device Package: A-PAK
- Operating Temperature - Junction: -65°C ~ 155°C
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Package: A, Axial |
Stock2,224 |
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150V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | A, Axial | A-PAK | -65°C ~ 155°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4.5mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -65°C ~ 160°C
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Package: DO-203AB, DO-5, Stud |
Stock7,328 |
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1600V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1600V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 160°C |
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Vishay Semiconductor Diodes Division |
DIODE 40A BRAZ SQR DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB (DO-5)
- Operating Temperature - Junction: -65°C ~ 190°C
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Package: DO-203AB, DO-5, Stud |
Stock5,872 |
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1200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 190°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 24.5A TO252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 24.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: 560pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,096 |
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1200V | 24.5A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 10A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock2,112 |
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300V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Comchip Technology |
DIODE GEN PURP 800V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-214AA, SMB |
Stock4,688 |
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800V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | 150°C (Max) |
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Micro Commercial Co |
DIODE SCHOTTKY 30V 500MA SOD323
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-76, SOD-323 |
Stock4,128 |
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30V | 500mA | 550mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | - | Surface Mount | SC-76, SOD-323 | SOD-323 | -55°C ~ 125°C |
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STMicroelectronics |
DIODE SCHOTTKY 40V 1A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 35µA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: SOD-123F |
Stock25,188 |
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40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 40V | - | Surface Mount | SOD-123F | SOD-123F | -40°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 3A DO201AD
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AA, DO-27, Axial |
Stock120,000 |
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100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 20V 1A DO41
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: 150°C (Max)
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Package: DO-204AL, DO-41, Axial |
Stock8,897,652 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | 150°C (Max) |
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ON Semiconductor |
DIODE SCHOTTKY 30V 70MA SOD923
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 70mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 1mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500nA @ 30V
- Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-923
- Supplier Device Package: SOD-923
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SOD-923 |
Stock187,512 |
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30V | 70mA (DC) | 350mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 500nA @ 30V | 2.5pF @ 1V, 1MHz | Surface Mount | SOD-923 | SOD-923 | -55°C ~ 125°C |
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Microchip Technology |
DIODE GP 225V 200MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 225 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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225 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | - | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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onsemi |
DIODE GEN PURP 200V 200MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 200 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: 150°C
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Package: - |
Stock15,744 |
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200 V | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 200 V | 2pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C |
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Micro Commercial Co |
DIODE GEN PURP 4KV 200MA DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4000 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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4000 V | 200mA | 5 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 4000 V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 400V 4A TO277A
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 4A | 1.1 V @ 4 A | Standard Recovery >500ns, > 200mA (Io) | 2.5 µs | 10 µA @ 400 V | 30pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1.2A, 800V, STANDARD RECOVERY RE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.2A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.2 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock60,000 |
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800 V | 1.2A | 1.3 V @ 1.2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 500V 8A TO263AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
500 V | 8A | 1.5 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 500 V | - | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SIL CARB 1.2KV 10A TO220AC
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 640 µA @ 1200 V
- Capacitance @ Vr, F: 611pF @ 100mV, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO220AC (Type WX)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock150 |
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1200 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 640 µA @ 1200 V | 611pF @ 100mV, 1MHz | Through Hole | TO-220-2 | TO220AC (Type WX) | -55°C ~ 175°C |
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IXYS |
DIODE GEN PURP 1.6KV 10A TO263HV
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
- Capacitance @ Vr, F: 4pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263HV
- Operating Temperature - Junction: -55°C ~ 175°C
|
Package: - |
Request a Quote |
|
1600 V | 10A | 1.26 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | 4pF @ 400V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263HV | -55°C ~ 175°C |
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Micro Commercial Co |
DIODE GEN PURP 200V 6A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
200 V | 6A | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 200 V | 120pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 800 V
- Capacitance @ Vr, F: 35pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock7,491 |
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800 V | 3A | 1.7 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 10 µA @ 800 V | 35pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 3A TO-220-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 3 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 45 µA @ 650 V
- Capacitance @ Vr, F: 199pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C
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Package: - |
Stock1,200 |
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650 V | 3A | 1.35 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 199pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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60 V | 16A | 700 mV @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |