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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 1.7mA @ 650V
- Capacitance @ Vr, F: 300pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,312 |
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650V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 1.7mA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | -55°C ~ 175°C |
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Renesas Electronics America |
DIODE GEN PURP 360V 20A TO252
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 360V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 1µA @ 360V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,584 |
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360V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 360V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock4,928 |
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100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Powerex Inc. |
DIODE MODULE 1.4KV 3600A PWRDISC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 3600A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 22µs
- Current - Reverse Leakage @ Vr: 200mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: Pow-R-Disc
- Operating Temperature - Junction: -
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Package: DO-200AD |
Stock7,248 |
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1400V | 3600A | 1.15V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | 22µs | 200mA @ 1400V | - | Chassis Mount | DO-200AD | Pow-R-Disc | - |
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GeneSiC Semiconductor |
DIODE GP 1.8KV 165A DO205AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 165A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 22mA @ 1800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AB, DO-9, Stud
- Supplier Device Package: DO-205AB, DO-9
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-205AB, DO-9, Stud |
Stock5,152 |
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1800V | 165A | 1.5V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 22mA @ 1800V | - | Chassis, Stud Mount | DO-205AB, DO-9, Stud | DO-205AB, DO-9 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1.1KV 1.4A A-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1100V
- Current - Average Rectified (Io): 1.4A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 4µA @ 1100V
- Capacitance @ Vr, F: 40pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, A |
Stock5,696 |
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1100V | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 75A DO5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 75A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 75A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock4,608 |
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45V | 75A | 650mV @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP REV 1.6KV 70A DO5
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock4,176 |
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1600V | 70A | 1.1V @ 70A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 600V 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock4,112 |
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600V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 100A POWERTAB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 770mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Capacitance @ Vr, F: 2700pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: PowerTab?
- Supplier Device Package: PowerTab?
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: PowerTab? |
Stock3,248 |
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45V | 100A | 770mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 2700pF @ 5V, 1MHz | Through Hole | PowerTab? | PowerTab? | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO-220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-2 |
Stock3,792 |
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45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 500V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 500V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: T-18, Axial
- Supplier Device Package: TS-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: T-18, Axial |
Stock7,424 |
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500V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 10pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 1A, 2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Capacitance @ Vr, F: 55pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-204AL, DO-41, Axial |
Stock7,104 |
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20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 55pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 1A DO-219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200µA @ 40V
- Capacitance @ Vr, F: 115pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock5,760 |
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40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | 115pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 2.5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 5µA @ 650V
- Capacitance @ Vr, F: 274pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-257-3
- Supplier Device Package: TO-257
- Operating Temperature - Junction: -55°C ~ 250°C
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Package: TO-257-3 |
Stock5,232 |
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650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | Through Hole | TO-257-3 | TO-257 | -55°C ~ 250°C |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SOD-123F |
Stock120,000 |
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200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 20pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -65°C ~ 150°C |
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STMicroelectronics |
DIODE SCHOTTKY 170V 1A TO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 170V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 890mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5µA @ 170V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-220-3 |
Stock7,200 |
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170V | 1A | 890mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5µA @ 170V | - | Through Hole | TO-220-3 | TO-220AB | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 10V 3A SOD123F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 10V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 530mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 10V
- Capacitance @ Vr, F: 85pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: 150°C (Max)
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Package: SOD-123F |
Stock26,880 |
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10V | 3A (DC) | 530mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 10V | 85pF @ 1V, 1MHz | Surface Mount | SOD-123F | SOD-123F | 150°C (Max) |
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Micro Commercial Co |
DIODE GEN PURP 200V 1A SMAE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMAE
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 1A | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMAE | -50°C ~ 150°C |
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Vishay |
8A, 400V, STD RECT, SMC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1.6A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3.6 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 400 V
- Capacitance @ Vr, F: 72pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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400 V | 1.6A | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 3.6 µs | 10 µA @ 400 V | 72pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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onsemi |
RECTIFIER DIODE, 0.5A, 800V V(RR
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
G3 SIC-SBD 650V 6A TO-220-2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 70 µA @ 650 V
- Capacitance @ Vr, F: 392pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C
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Package: - |
Stock1,200 |
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650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C |
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Venkel |
Rectifier,SOD-123,75V,150mA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: -
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
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75 V | 150mA | 855 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 6 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SOD-123 | - | -55°C ~ 150°C |
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Diotec Semiconductor |
SCHOTTKY D5.4X7.5 45V 15A 150C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 150°C
|
Package: - |
Request a Quote |
|
45 V | 15A | 530 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 45 V | - | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Micro Commercial Co |
DIODE GEN PURP 50V 1A R-1
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 50 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-1, Axial
- Supplier Device Package: R-1
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
50 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 50 V | 12pF @ 4V, 1MHz | Through Hole | R-1, Axial | R-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1A, 60V, SCHOTTKY RECTIFIER
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 60 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123H
- Supplier Device Package: SOD-123HE
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
60 V | 1A | 700 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 µA @ 60 V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 35V 20A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2.7 mA @ 35 V
- Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D2PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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35 V | 20A | 570 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7 mA @ 35 V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263AB (D2PAK) | -55°C ~ 150°C |
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Solid State Inc. |
DIODE GEN PURP 1.2KV 12A DO4
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
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1200 V | 12A | 1.2 V @ 12 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 150°C |