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Comchip Technology |
DIODE SCHOTTKY 20V 1A MINISMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 1A (DC)
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 20V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123T
- Supplier Device Package: Mini SMA/SOD-123
- Operating Temperature - Junction: -50°C ~ 125°C
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Package: SOD-123T |
Stock4,912 |
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20V | 1A (DC) | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 120pF @ 4V, 1MHz | Surface Mount | SOD-123T | Mini SMA/SOD-123 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 5µA @ 800V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-201AD, Axial |
Stock6,608 |
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800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE SCHOTTKY 20V 350MA DO35
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 350mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10ns
- Current - Reverse Leakage @ Vr: 5µA @ 10V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 125°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock5,920 |
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20V | 350mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 10V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A D2PAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 60ns
- Current - Reverse Leakage @ Vr: 10µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock7,328 |
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600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 9A DO204AR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 310mV @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 7mA @ 15V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AR, Axial
- Supplier Device Package: DO-204AR
- Operating Temperature - Junction: -55°C ~ 100°C
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Package: DO-204AR, Axial |
Stock4,032 |
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15V | 9A | 310mV @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | - | 7mA @ 15V | - | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 100°C |
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Powerex Inc. |
DIODE MODULE 1.6KV 3600A PWRDISC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1600V
- Current - Average Rectified (Io): 3600A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3000A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 22µs
- Current - Reverse Leakage @ Vr: 200mA @ 1600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AD
- Supplier Device Package: Pow-R-Disc
- Operating Temperature - Junction: -
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Package: DO-200AD |
Stock2,992 |
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1600V | 3600A | 1.15V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | 22µs | 200mA @ 1600V | - | Chassis Mount | DO-200AD | Pow-R-Disc | - |
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Powerex Inc. |
DIODE MODULE 1.4KV 600A POWRBLOK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 600A
- Voltage - Forward (Vf) (Max) @ If: 1.19V @ 1800A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 40mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: POW-R-BLOK? Module
- Supplier Device Package: POW-R-BLOK? Module
- Operating Temperature - Junction: -
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Package: POW-R-BLOK? Module |
Stock4,208 |
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1400V | 600A | 1.19V @ 1800A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1400V | - | Chassis Mount | POW-R-BLOK? Module | POW-R-BLOK? Module | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 85A DO203AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 85A
- Voltage - Forward (Vf) (Max) @ If: 1.75V @ 266.9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 100µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-203AB
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-203AB, DO-5, Stud |
Stock7,824 |
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100V | 85A | 1.75V @ 266.9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 80V 1A DO213AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 690mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 80V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AB, MELF
- Supplier Device Package: DO-213AB
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: DO-213AB, MELF |
Stock5,440 |
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80V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.8A TO277A
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 140ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 44pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,448 |
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200V | 1.8A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 44pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-214AA, SMB |
Stock3,552 |
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600V | 2A | 1.45V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 70V 250MA SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 70V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 2.5µA @ 70V
- Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock2,128 |
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70V | 250mA | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 2.5µA @ 70V | 1.5pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 500MA DO213
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5µs
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-213AA (Glass) |
Stock60,000 |
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600V | 500mA | 1.3V @ 500mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 650V
- Capacitance @ Vr, F: 190pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-220-2 |
Stock51,468 |
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650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 75V 200MA SOD523
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 6ns
- Current - Reverse Leakage @ Vr: 1µA @ 75V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: SC-79, SOD-523 |
Stock85,542 |
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75V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 6ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY CLP1006-G4
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 75µA @ 20V
- Capacitance @ Vr, F: 150pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 0402 (1006 Metric)
- Supplier Device Package: CLP1006-2L
- Operating Temperature - Junction: 150°C (Max)
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Package: 0402 (1006 Metric) |
Stock76,284 |
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20V | 500mA | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 20V | 150pF @ 0V, 1MHz | Surface Mount | 0402 (1006 Metric) | CLP1006-2L | 150°C (Max) |
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Renesas Electronics Corporation |
DIODE FOR ANTENNA SWITCHING
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Panjit International Inc. |
DIODE SCHOTTKY 150V 1A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB (DO-214AA)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Stock2,340 |
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150 V | 1A | 900 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 175°C |
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Microchip Technology |
STANDARD RECTIFIER
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 3.3A
- Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 10 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 3.3A | 2.2 V @ 10 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 30V 1A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 360 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5 mA @ 30 V
- Capacitance @ Vr, F: 170pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: SOD-123W
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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30 V | 1A | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 30 V | 170pF @ 1V, 1MHz | Surface Mount | SOD-123W | SOD-123W | 150°C |
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Infineon Technologies |
SIC CHIP
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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Micro Commercial Co |
DIODE GEN PURP 800V 1.5A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 800 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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800 V | 1.5A | 1.4 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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KYOCERA AVX |
SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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20 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
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Microchip Technology |
SMALL-SIGNAL SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 500 V
- Capacitance @ Vr, F: 80pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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500 V | 4A | 1.7 V @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Diotec Semiconductor |
IC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 50mA
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 nA @ 20 V
- Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SOD-523
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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20 V | 50mA | 550 mV @ 50 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 nA @ 20 V | 3.9pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SOD-523 | -55°C ~ 125°C |
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Microchip Technology |
DIODE GEN PURP REV 700V 22A DO4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 700 V
- Current - Average Rectified (Io): 22A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 700 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4 (DO-203AA)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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700 V | 22A | 1.2 V @ 30 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 700 V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-4 (DO-203AA) | -65°C ~ 200°C |
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NextGen Components |
SiC Schottky 1200V 20A TO247- 2L
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 1371pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2L
- Operating Temperature - Junction: -55°C ~ 175°C
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1200 V | 20A | 1.6 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 1371pF @ 0V, 1MHz | Through Hole | TO-247-2 | TO-247-2L | -55°C ~ 175°C |