Page 1782 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

BY255GP-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.3KV 3A DO201AD

Package: DO-201AD, Axial

Stock122,004
300HFR40P
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 300A DO205AB

Package: DO-205AB, DO-9, Stud

Stock6,096
20TQ035STRR
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 20A D2PAK

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock2,640
SK34
Micro Commercial Co

DIODE SCHOTTKY 40V 3A DO214AB

Package: DO-214AB, SMC

Stock9,077,124
VS-HFA25PB60-N3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 25A 600V TO-247AC

Package: TO-247-2

Stock5,520
VS-8ETU04STRLHM3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock4,288
SF1602G C0G
TSC America Inc.

DIODE, SUPER FAST, 16A, 100V, 35

Package: TO-220-3

Stock7,936
SF63GHB0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 150V, 35N

Package: DO-201AD, Axial

Stock6,784
GF1M/1754
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO214BA

Package: DO-214BA

Stock4,592
ES2GHM4G
TSC America Inc.

DIODE, SUPER FAST, 2A, 400V, 35N

Package: DO-214AA, SMB

Stock4,784
HS1KL RFG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Package: DO-219AB

Stock3,072
CR1F-100 BK
Central Semiconductor Corp

DIODE GEN PURP 1KV 1.5A DO41

Package: DO-204AL, DO-41, Axial

Stock4,640
B160-M3/5AT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO214AC

Package: DO-214AC, SMA

Stock6,176
RS1JTR
SMC Diode Solutions

DIODE GEN PURP 600V 1A SMA

Package: DO-214AC, SMA

Stock6,864
CMSH3-100M TR13
Central Semiconductor Corp

DIODE SCHOTTKY 100V 3A SMB

Package: DO-214AA, SMB

Stock7,968
STPS30170DJF-TR
STMicroelectronics

DIODE SCHOTTKY 170V 30A POWRFLAT

Package: 8-PowerVDFN

Stock10,680
JANS1N5420US
Microchip Technology

DIODE GEN PURP 600V 3A B SQ-MELF

Package: -

Request a Quote
RUR3050
Harris Corporation

DIODE AVALANCHE 500V 30A TO220AC

Package: -

Request a Quote
EGF1B-1HE3-5CA
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214BA

Package: -

Request a Quote
SF14G-TP
Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BY255GP-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.3KV 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1300V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 1300V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-201AD, Axial	Stock122,004	1300V	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 1300V	40pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
300HFR40P	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 300A DO205AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-205AB, DO-9, Stud	Stock6,096	400V	300A	-	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 400V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-40°C ~ 180°C
20TQ035STRR	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 20A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 570mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7mA @ 35V Capacitance @ Vr, F: 1400pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock2,640	35V	20A	570mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7mA @ 35V	1400pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SK34	Micro Commercial Co	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AB, SMC	Stock9,077,124	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
VS-HFA25PB60-N3	Vishay Semiconductor Diodes Division	DIODE HEXFRED 25A 600V TO-247AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 600V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 20µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Modified Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-247-2	Stock5,520	600V	25A	1.7V @ 600V	Fast Recovery =< 500ns, > 200mA (Io)	75ns	20µA @ 600V	-	Through Hole	TO-247-2	TO-247AC Modified	-55°C ~ 150°C
VS-8ETU04STRLHM3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 43ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock4,288	400V	8A	1.3V @ 8A	Standard Recovery >500ns, > 200mA (Io)	43ns	10µA @ 400V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-55°C ~ 175°C
SF1602G C0G	TSC America Inc.	DIODE, SUPER FAST, 16A, 100V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-220-3	Stock7,936	100V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF63GHB0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 975mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock6,784	150V	6A	975mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
GF1M/1754	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214BA	Stock4,592	1000V	1A	1.2V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
ES2GHM4G	TSC America Inc.	DIODE, SUPER FAST, 2A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-214AA, SMB	Stock4,784	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS1KL RFG	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock3,072	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
CR1F-100 BK	Central Semiconductor Corp	DIODE GEN PURP 1KV 1.5A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-204AL, DO-41, Axial	Stock4,640	1000V	1.5A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
B160-M3/5AT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1V Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock6,176	60V	1A	750mV @ 1V	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
RS1JTR	SMC Diode Solutions	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AC, SMA	Stock6,864	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-65°C ~ 150°C
CMSH3-100M TR13	Central Semiconductor Corp	DIODE SCHOTTKY 100V 3A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 280pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AA, SMB	Stock7,968	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	280pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
STPS30170DJF-TR	STMicroelectronics	DIODE SCHOTTKY 170V 30A POWRFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 170V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 950mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15µA @ 170V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (6x5) Operating Temperature - Junction: 150°C (Max)	Package: 8-PowerVDFN	Stock10,680	170V	30A	950mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	15µA @ 170V	-	Surface Mount	8-PowerVDFN	PowerFlat? (6x5)	150°C (Max)
JANS1N5420US	Microchip Technology	DIODE GEN PURP 600V 3A B SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
RUR3050	Harris Corporation	DIODE AVALANCHE 500V 30A TO220AC Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 30 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	500 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	30 µA @ 500 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
EGF1B-1HE3-5CA	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
SF14G-TP	Micro Commercial Co	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1A	950 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	20pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
MUR6065B-BP	Micro Commercial Co	RECTIFIERS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 650 V Capacitance @ Vr, F: 295pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Request a Quote	650 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 650 V	295pF @ 4V, 1MHz	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
1N3139R	Solid State Inc.	DIODE GEN PURP REV 50V 100A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	50 V	100A	1.2 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 50 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
UF151G_R2_00001	Panjit International Inc.	DIODE GEN PURP 100V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1.5A	1 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	1 µA @ 100 V	25pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
R36130	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N1201C	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	Package: -	Request a Quote	150 V	25A	1.1 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 150 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
VS-8ETX06-M3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Stock15,144	600 V	8A	3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	24 ns	50 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 175°C
CGRA4003-HF	Comchip Technology	DIODE GEN PURP 200V 1A DO214AC S Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	1A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 200 V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
JAN1N5619-TR	Microchip Technology	DIODE GEN PURP 600V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 500 nA @ 800 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	1A	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 800 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C