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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A GP20
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: GP20
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AA, DO-27, Axial |
Stock7,392 |
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200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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NXP |
DIODE AVALANCHE 600V 1.5A MELF
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1µA @ 600V
- Capacitance @ Vr, F: 21pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-87
- Supplier Device Package: MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SOD-87 |
Stock6,256 |
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600V | 1.5A | 1.05V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 1µA @ 600V | 21pF @ 0V, 1MHz | Surface Mount | SOD-87 | MELF | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A DPAK
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock263,556 |
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800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 3A 100V DO-214AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5µs
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock2,176 |
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100V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 100V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 200V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock2,112 |
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200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 30mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200nA @ 50V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-80 Variant
- Supplier Device Package: SOD-80 QuadroMELF
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-80 Variant |
Stock7,920 |
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60V | 30mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
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Diodes Incorporated |
DIODE SBR 45V 12A POWERDI5SP
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 500mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: PowerDI? 5SP
- Supplier Device Package: PowerDI5SP?
- Operating Temperature - Junction: -
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Package: PowerDI? 5SP |
Stock3,312 |
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45V | 12A | 500mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | PowerDI? 5SP | PowerDI5SP? | - |
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Microchip Technology |
DIODE GEN PURP 100V 15A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 150pF @ 10V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 15A | 1.2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | 150pF @ 10V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 100V 12A TO254
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: 300pF @ 5V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-254-3, TO-254AA
- Supplier Device Package: TO-254
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 12A | 1.05 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 100 V | 300pF @ 5V, 1MHz | Through Hole | TO-254-3, TO-254AA | TO-254 | -55°C ~ 175°C |
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NTE Electronics, Inc |
DIODE GEN PURP 50V 15A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 mA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 15A | 1.5 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 mA @ 50 V | - | Stud Mount | DO-203AA, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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ANBON SEMICONDUCTOR (INT'L) LIMITED |
40A AXIAL LEADED SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45 V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 550 mV @ 40 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 45 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: Axial
- Operating Temperature - Junction: -55°C ~ 200°C
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Package: - |
Stock3,507 |
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45 V | 40A | 550 mV @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 45 V | - | Through Hole | Axial | Axial | -55°C ~ 200°C |
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Panjit International Inc. |
DIODE SCHOTTKY 50V 15A TO277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 320 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock14,202 |
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50 V | 15A | 490 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 320 µA @ 50 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GP 100V 500MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AA (Glass)
- Supplier Device Package: DO-213AA (GL34)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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100 V | 500mA | 1.25 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 150V 150MA SOD123
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3 µs
- Current - Reverse Leakage @ Vr: 1 nA @ 125 V
- Capacitance @ Vr, F: 8pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123
- Supplier Device Package: SOD-123
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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150 V | 150mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | 8pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 200°C |
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Microchip Technology |
DIODE GEN PURP 50V 200MA DO213AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 100 nA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-213AA
- Supplier Device Package: DO-213AA
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Request a Quote |
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50 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 150V 20A DO203AA
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 300pF @ 10V, 1MHz
- Mounting Type: Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA (DO-4)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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150 V | 20A | 950 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 300pF @ 10V, 1MHz | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA (DO-4) | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
SOD-323, 100V, 0.15A, SWITCHING
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 75 V
- Capacitance @ Vr, F: 2pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-76, SOD-323
- Supplier Device Package: SOD-323
- Operating Temperature - Junction: 150°C
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Package: - |
Request a Quote |
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75 V | 150mA | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 150°C |
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Diodes Incorporated |
DIODE GEN PURP 85V SOT523
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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onsemi |
DIODE SCHOTTKY 30V 200MA SOT23-3
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 2 µA @ 25 V
- Capacitance @ Vr, F: 10pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 150°C |
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Microchip Technology |
DIODE GP 160V 1A A SQ-MELF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 160 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 150 V
- Capacitance @ Vr, F: 25pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, A
- Supplier Device Package: A, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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160 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A, SQ-MELF | -65°C ~ 175°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 3A SOD128
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 670 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 12 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 60 V
- Capacitance @ Vr, F: 315pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: SOD-128/CFP5
- Operating Temperature - Junction: 175°C
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Package: - |
Stock9,174 |
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60 V | 3A | 670 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 12 ns | 1 µA @ 60 V | 315pF @ 1V, 1MHz | Surface Mount | SOD-128 | SOD-128/CFP5 | 175°C |
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Micro Commercial Co |
SCHOTTKY BARRIER RECTIFIERS 60V
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 60 V
- Capacitance @ Vr, F: 215pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock18,000 |
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60 V | 5A | 700 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | 215pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 200V 2A SMA
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 200 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock21,114 |
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200 V | 2A | 900 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 200 V | 45pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
1A, 1000V, STANDARD RECOVERY REC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
- Capacitance @ Vr, F: 7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-221AC, SMA Flat Leads
- Supplier Device Package: SMAF
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock22,020 |
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1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 7pF @ 4V, 1MHz | Surface Mount | DO-221AC, SMA Flat Leads | SMAF | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE SCHOTTKY 60V 2A SOD123FL
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 µA @ 60 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock39,141 |
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60 V | 2A | 750 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3 µA @ 60 V | 100pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 175°C |
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Comchip Technology |
DIODE SCHOTTKY 150V 15A TO277B
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 250 µA @ 150 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277B
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
150 V | 15A | 850 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250 µA @ 150 V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277B | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 30A TO3PF
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 19pF @ 600V, 1MHz
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PF
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock750 |
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600 V | 30A | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 10 µA @ 600 V | 19pF @ 600V, 1MHz | Through Hole | SC-94 | TO-3PF | -55°C ~ 175°C |
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Central Semiconductor Corp |
SCHOTTKY SMB 60V 2A 150C
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500 µA @ 60 V
- Capacitance @ Vr, F: 120pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: - |
Stock8,805 |
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60 V | 2A | 700 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 60 V | 120pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |