Page 1820 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

LL101A-7
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 30MA SOD80

Package: DO-213AC, MINI-MELF, SOD-80

Stock150,000
1N4937RL
ON Semiconductor

DIODE GEN PURP 600V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock5,904
R9G01012XX
Powerex Inc.

DIODE MODULE 1KV 1200A DO200AB

Package: DO-200AB, B-PUK

Stock3,280
DSEP29-06AS
IXYS

DIODE GEN PURP 600V 30A TO263

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,408
SFS1608GHMNG
TSC America Inc.

DIODE, SUPER FAST, 16A, 600V, 35

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock7,536
SRAS2060HMNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,552
SF67GHB0G
TSC America Inc.

DIODE, SUPER FAST, 6A, 500V, 35N

Package: DO-201AD, Axial

Stock3,072
HT18G A0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 1000V

Package: T-18, Axial

Stock2,480
SS24L RHG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Package: DO-219AB

Stock6,240
SR006 A0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.5A,

Package: DO-204AL, DO-41, Axial

Stock5,408
SS15LHRQG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 5

Package: DO-219AB

Stock4,864
BAV201-GS18
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 250MA SOD80

Package: SOD-80 Variant

Stock7,200
S5M
Taiwan Semiconductor Corporation

DIODE GEN PURP 5A DO214AB

Package: -

Stock17,520
BAS3005A02VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

Package: -

Stock42,630
HS5D
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 5A DO214AB

Package: -

Stock8,370
BAS21W-AQ
Diotec Semiconductor

IC

Package: -

Request a Quote
UFR10260R
Microchip Technology

DIODE GEN PURP 600V 100A DO203AB

Package: -

Request a Quote
B5819W
HY Electronic (Cayman) Limited

DIODE SCHOTTKY 40V 1A SOD123

Package: -

Request a Quote
STTH6012WL
STMicroelectronics

DIODE GP 1.2KV 60A DO247 LL

Package: -

Stock1,719
JAN1N5196US-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
LL101A-7	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 30MA SOD80 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 30mA (DC) Voltage - Forward (Vf) (Max) @ If: 410mV @ 1mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 50V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max)	Package: DO-213AC, MINI-MELF, SOD-80	Stock150,000	60V	30mA (DC)	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	125°C (Max)
1N4937RL	ON Semiconductor	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,904	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
R9G01012XX	Powerex Inc.	DIODE MODULE 1KV 1200A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1200A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 25µs Current - Reverse Leakage @ Vr: 150mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	Package: DO-200AB, B-PUK	Stock3,280	1000V	1200A	1.45V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	25µs	150mA @ 1000V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
DSEP29-06AS	IXYS	DIODE GEN PURP 600V 30A TO263 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.61V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 Operating Temperature - Junction: -55°C ~ 175°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,408	600V	30A	1.61V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	250µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263	-55°C ~ 175°C
SFS1608GHMNG	TSC America Inc.	DIODE, SUPER FAST, 16A, 600V, 35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock7,536	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SRAS2060HMNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 20A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 700mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,552	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SF67GHB0G	TSC America Inc.	DIODE, SUPER FAST, 6A, 500V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 500V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-201AD, Axial	Stock3,072	500V	6A	1.7V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	50pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
HT18G A0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 1000V Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: T-18, Axial	Stock2,480	-	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS24L RHG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock6,240	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SR006 A0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 0.5A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 700mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock5,408	60V	500mA	700mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	80pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS15LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock4,864	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAV201-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 250MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 100V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 150°C (Max)	Package: SOD-80 Variant	Stock7,200	100V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 100V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-80 Variant	SOD-80 QuadroMELF	150°C (Max)
S5M	Taiwan Semiconductor Corporation	DIODE GEN PURP 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock17,520	1000 V	5A	-	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BAS3005A02VH6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 30 V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Stock42,630	30 V	500mA	500 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 30 V	15pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
HS5D	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,370	200 V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
BAS21W-AQ	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SOT-323	-55°C ~ 150°C
UFR10260R	Microchip Technology	DIODE GEN PURP 600V 100A DO203AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Current - Reverse Leakage @ Vr: 25 µA @ 600 V Capacitance @ Vr, F: 210pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	600 V	100A	1 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	25 µA @ 600 V	210pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 175°C
B5819W	HY Electronic (Cayman) Limited	DIODE SCHOTTKY 40V 1A SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	Package: -	Request a Quote	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	120pF @ 4V, 1MHz	Surface Mount	SOD-123	SOD-123	-
STTH6012WL	STMicroelectronics	DIODE GP 1.2KV 60A DO247 LL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 125 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: DO-247 LL Operating Temperature - Junction: 175°C	Package: -	Stock1,719	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	Through Hole	TO-247-2	DO-247 LL	175°C
JAN1N5196US-TR	Microchip Technology	SIGNAL OR COMPUTER DIODE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 250 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	225 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 250 V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N647UR-1-TR	Microchip Technology	DIODE GP 400V 400MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	400 V	400mA	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
GP3D020A170B	SemiQ	DIODE SIL CARB 1.7KV 67A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 67A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 1700 V Capacitance @ Vr, F: 1403pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock117	1700 V	67A	1.65 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1700 V	1403pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SS30200HE_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 3A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock13,446	200 V	3A	860 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 200 V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
1N485A-TR	Microchip Technology	DIODE GEN PURP 180V 100MA DO7 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 180 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AA, DO-7, Axial Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	180 V	100mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 180 V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
1N4946-BK	Central Semiconductor Corp	DIODE GEN PURP 600V 1A GPR-1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: R-1, Axial Supplier Device Package: GPR-1A Operating Temperature - Junction: -	Package: -	Request a Quote	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	-	Through Hole	R-1, Axial	GPR-1A	-
1N4148W-AU_R1_000A1	Panjit International Inc.	DIODE GEN PURP 75V 200MA SOD123 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock42,753	75 V	200mA	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	2.5 µA @ 75 V	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
HER201G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	2A	1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
JAN1N6674	Microchip Technology	DIODE GEN PURP 500V 15A TO254 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 50 µA @ 400 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	Package: -	Request a Quote	500 V	15A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 400 V	150pF @ 10V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-