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Vishay Semiconductor Diodes Division |
DIODE SW 1A 600V 250NS DO204AL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock2,160 |
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600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-201AA, DO-27, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: DO-201AA, DO-27, Axial |
Stock28,560 |
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100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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Powerex Inc. |
DIODE MODULE 2.2KV 800A DO200AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 2200V
- Current - Average Rectified (Io): 800A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10µs
- Current - Reverse Leakage @ Vr: 50mA @ 2200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -
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Package: DO-200AA, A-PUK |
Stock2,944 |
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2200V | 800A | 1.8V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 10µs | 50mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | DO-200AA, R62 | - |
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Vishay Semiconductor Diodes Division |
DIODE MODULE 1KV 70A D-55
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 15mA @ 1000V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: D-55 T-Module
- Supplier Device Package: D-55
- Operating Temperature - Junction: -
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Package: D-55 T-Module |
Stock6,208 |
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1000V | 70A | - | Standard Recovery >500ns, > 200mA (Io) | - | 15mA @ 1000V | - | Chassis Mount | D-55 T-Module | D-55 | - |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 5A DO214AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2mA @ 40V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock2,656 |
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40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5.5A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 5.5A
- Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 4mA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock3,440 |
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60V | 5.5A | 590mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, SUPER FAST, 1A, 300V, 35N
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock5,184 |
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300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.5A, 200V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock4,160 |
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200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Nexperia USA Inc. |
DIODE SCHOTTKY 60V 1A SOD123W
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 4.4ns
- Current - Reverse Leakage @ Vr: 60µA @ 60V
- Capacitance @ Vr, F: 120pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123W
- Supplier Device Package: CFP3
- Operating Temperature - Junction: 175°C (Max)
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Package: SOD-123W |
Stock2,912 |
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60V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 4.4ns | 60µA @ 60V | 120pF @ 1V, 1MHz | Surface Mount | SOD-123W | CFP3 | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AC, SMA |
Stock6,752 |
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90V | 1.5A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE GEN PURP 50V 1A DO41
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-41
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AL, DO-41, Axial |
Stock51,336 |
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50V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 200MA SOT23
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5ns
- Current - Reverse Leakage @ Vr: 500nA @ 25V
- Capacitance @ Vr, F: 7pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock55,374 |
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40V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Bourns Inc. |
DIODE GEN PURP 400V 1A 1408
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Chip, Concave Terminals
- Supplier Device Package: 1408
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: Chip, Concave Terminals |
Stock199,494 |
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400V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | Chip, Concave Terminals | 1408 | -65°C ~ 175°C |
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Microchip Technology |
DIODE GEN PURP 200V 70A DO5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 25 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5 (DO-203AB)
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Request a Quote |
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200 V | 70A | 1.25 V @ 200 A | Standard Recovery >500ns, > 200mA (Io) | - | 25 µA @ 200 V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 (DO-203AB) | -65°C ~ 200°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 150 V
- Capacitance @ Vr, F: 25pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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150 V | 2A | 950 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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onsemi |
RECTIFIER DIODE, SCHOTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
DIODE GEN PURP 1KV 1.5A SMA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: 10.7pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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1000 V | 1.5A | 1.7 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 1 µA @ 1000 V | 10.7pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA (DO-214AC) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 650V 10A TO247
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Panjit International Inc. |
DIODE GEN PURP 400V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock26,640 |
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400 V | 1A | 1.4 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 1 µA @ 400 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
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Vishay General Semiconductor - Diodes Division |
DIODE GEN PURP 600V 3.9A TO263AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 3.9A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 330 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 160pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
- Supplier Device Package: TO-263AC (SMPD)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock12,000 |
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600 V | 3.9A | 1 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 330 ns | 5 µA @ 600 V | 160pF @ 4V, 1MHz | Surface Mount | TO-263-3, D2PAK (2 Leads + Tab), Variant | TO-263AC (SMPD) | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
RECTIFIER
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Request a Quote |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay |
5A, 200V, DFN3820A TMBS RECT.
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.8A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 200 V
- Capacitance @ Vr, F: 285pF @ 4V, 1MHz
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 2-VDFN
- Supplier Device Package: DFN3820A
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Request a Quote |
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200 V | 1.8A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | 285pF @ 4V, 1MHz | Surface Mount, Wettable Flank | 2-VDFN | DFN3820A | -40°C ~ 175°C |
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Microchip Technology |
DIODE SCHOTTKY 5V 10MA CHIP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 5 V
- Current - Average Rectified (Io): 10mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 nA @ 1 V
- Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Chip
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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5 V | 10mA | 600 mV @ 1 mA | Small Signal =< 200mA (Io), Any Speed | - | 100 nA @ 1 V | 0.8pF @ 0V, 1MHz | Surface Mount | Die | Chip | -55°C ~ 150°C |
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Microchip Technology |
DIODE GEN PURP 75V 200MA UB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 75 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 5 ns
- Current - Reverse Leakage @ Vr: 500 nA @ 75 V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: - |
Request a Quote |
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75 V | 200mA | 1 V @ 10 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 500 nA @ 75 V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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onsemi |
DIODE SIL CARB 650V 60A TO247-3
- Diode Type: SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 200 µA @ 650 V
- Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock285 |
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650 V | 60A | - | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
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Vishay General Semiconductor - Diodes Division |
DIODE SCHOTTKY 150V 2A DO219AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 150 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -40°C ~ 175°C
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Package: - |
Stock22,647 |
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150 V | 2A | 1.46 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 150 V | 90pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -40°C ~ 175°C |
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Panjit International Inc. |
DIODE GEN PURP 600V 6A P600
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 250 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 300pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: P600, Axial
- Supplier Device Package: P600
- Operating Temperature - Junction: -50°C ~ 150°C
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Package: - |
Request a Quote |
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600 V | 6A | 1.3 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 300pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 5A ITO220AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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100 V | 5A | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 100 V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |