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Microsemi Corporation |
DIODE GEN PURP 400V 3A D5B
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: D-5B
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, B |
Stock2,912 |
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400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
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SMC Diode Solutions |
DIODE SCHOTTKY 35V 120A PRM1-1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Current - Average Rectified (Io): 120A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10mA @ 35V
- Capacitance @ Vr, F: 5200pF @ 5V, 1MHz
- Mounting Type: Chassis Mount
- Package / Case: HALF-PAK
- Supplier Device Package: PRM1-1 (Half Pak Module)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: HALF-PAK |
Stock2,976 |
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35V | 120A | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 35V | 5200pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 150°C |
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Semtech Corporation |
D MET 6A SFST 100V SM
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock5,424 |
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- | - | - | - | - | - | - | - | - | - | - |
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GeneSiC Semiconductor |
DIODE SCHOTTKY REV 20V DO5
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5mA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AB, DO-5, Stud |
Stock6,320 |
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20V | 60A | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 30A TO263AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock3,056 |
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120V | 30A | 1.28V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 120V | - | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15A 45V TO-277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 4.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1.5mA @ 45V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock4,672 |
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45V | 4.8A (DC) | 580mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 3.9A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Current - Average Rectified (Io): 3.9A
- Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 400µA @ 120V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-277, 3-PowerDFN |
Stock6,080 |
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120V | 3.9A | 830mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 120V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
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WeEn Semiconductors |
BYV29X-600A/TO-220F/STANDARD M
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock3,808 |
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- | - | - | - | - | - | - | - | - | - | - |
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Sanken |
DIODE GEN PURP 200V 1.5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 100ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: Axial |
Stock7,952 |
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200V | 1.5A | 920mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | Through Hole | Axial | - | -40°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 5A, 800V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 10µA @ 800V
- Capacitance @ Vr, F: 50pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB, (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AB, SMC |
Stock2,720 |
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800V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB, (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Capacitance @ Vr, F: 18pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-214AA, SMB |
Stock5,744 |
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200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, FAST, 0.8A, 200V, 150NS,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 800mA
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150ns
- Current - Reverse Leakage @ Vr: 5µA @ 200V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-219AB |
Stock3,744 |
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200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Nexperia USA Inc. |
1PS76SB21/SOD323/SOD2
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,496 |
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- | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 30V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1nA @ 15V
- Capacitance @ Vr, F: 3pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: 175°C (Max)
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Package: DO-204AH, DO-35, Axial |
Stock6,176 |
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30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 1nA @ 15V | 3pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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Semtech Corporation |
DIODE GEN PURP 150V 2.5A AXIAL
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,720 |
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- | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
DIODE SCHOTTKY 25V 1A PMDU
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 350mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 700µA @ 20V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: PMDU
- Operating Temperature - Junction: 125°C (Max)
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Package: SOD-123F |
Stock5,248 |
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25V | 1A | 350mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 20V | - | Surface Mount | SOD-123F | PMDU | 125°C (Max) |
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Nexperia USA Inc. |
DIODE LOW VLTG STABISTOR SOT23
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 5V
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 960mV @ 100mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5µA @ 4V
- Capacitance @ Vr, F: 140pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB (SOT23)
- Operating Temperature - Junction: 150°C (Max)
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Package: TO-236-3, SC-59, SOT-23-3 |
Stock4,240 |
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5V | 200mA (DC) | 960mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 4V | 140pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 150°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 3µs
- Current - Reverse Leakage @ Vr: 1nA @ 125V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, B
- Supplier Device Package: B, SQ-MELF
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: SQ-MELF, B |
Stock14,616 |
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- | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO204AC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 50V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-204AC (DO-15)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock5,392 |
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50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
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Sanken |
DIODE SCHOTTKY 60V 1A SJP
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 680mV @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 60V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 2-SMD, J-Lead
- Supplier Device Package: 2-SMD
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: 2-SMD, J-Lead |
Stock6,080 |
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60V | 1A | 680mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | 2-SMD, J-Lead | 2-SMD | -40°C ~ 150°C |
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KYOCERA AVX |
SCHOTTKY DIODES
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 420 mV @ 500 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 20 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 1206 (3216 Metric)
- Supplier Device Package: 1206
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Request a Quote |
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20 V | 500mA | 420 mV @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 20 V | - | Surface Mount | 1206 (3216 Metric) | 1206 | -55°C ~ 125°C |
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Micro Commercial Co |
DIODE SCHOTTKY 100V 2A DO214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 100 V
- Capacitance @ Vr, F: 70pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock5,718 |
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100 V | 2A | 850 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | 70pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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onsemi |
DIODE SCHOTTKY 100V 8A 5DFN
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 70 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN, 5 Leads
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
|
100 V | 8A | 730 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 100 V | - | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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Microchip Technology |
DIODE SCHOTTKY 30V 150A THINKEY3
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io): 150A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 30 V
- Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: ThinKey™3
- Supplier Device Package: ThinKey™3
- Operating Temperature - Junction: -65°C ~ 150°C
|
Package: - |
Request a Quote |
|
30 V | 150A | 500 mV @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 mA @ 30 V | 7500pF @ 5V, 1MHz | Surface Mount | ThinKey™3 | ThinKey™3 | -65°C ~ 150°C |
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Good-Ark Semiconductor |
RECTIFIER, ULTRA-FAST/HIGH EFFIC
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 400 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: - |
Stock25,080 |
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400 V | 2A | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Panjit International Inc. |
DIODE GEN PURP 50V 3A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 150 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 50 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
|
Package: - |
Request a Quote |
|
50 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 50 V | 60pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Panjit International Inc. |
DIODE GEN PURP 800V 1A SOD123FL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 500 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 800 V
- Capacitance @ Vr, F: 9pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123FL
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Stock31,770 |
|
800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 1 µA @ 800 V | 9pF @ 4V, 1MHz | Surface Mount | SOD-123F | SOD-123FL | -55°C ~ 150°C |
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Diodes Incorporated |
DIODE SCHOTTKY 60V 3A SMB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 200 µA @ 60 V
- Capacitance @ Vr, F: 110pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: SMB
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
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60 V | 3A | 650 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 60 V | 110pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |