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Infineon Technologies |
DIODE SHOCTTKY
- Diode Type: -
- Voltage - DC Reverse (Vr) (Max): -
- Current - Average Rectified (Io): -
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: -
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
- Operating Temperature - Junction: -
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Package: - |
Stock6,864 |
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- | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
DIODE GEN PURP 300V 3A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 300V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 5µA @ 300V
- Capacitance @ Vr, F: 75pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-201AD, Axial |
Stock6,640 |
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300V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 300V | 75pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 4000V
- Current - Average Rectified (Io): 250mA
- Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 5µA @ 4000V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,120 |
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4000V | 250mA | 3V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.8KV 500MA DO204
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io): 500mA
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 5µA @ 1800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AL, DO-41, Axial
- Supplier Device Package: DO-204AL (DO-41)
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AL, DO-41, Axial |
Stock3,216 |
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1800V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 1800V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Diodes Incorporated |
DIODE GEN PURP 100V 2A DO15
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 2A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 30pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AC, DO-15, Axial
- Supplier Device Package: DO-15
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-204AC, DO-15, Axial |
Stock2,368 |
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100V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 30pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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Panasonic Electronic Components |
DIODE SCHOTTKY 20V 200MA SSMINI2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 470mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 2ns
- Current - Reverse Leakage @ Vr: 15µA @ 10V
- Capacitance @ Vr, F: 15pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523
- Supplier Device Package: SSMini2-F4
- Operating Temperature - Junction: 125°C (Max)
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Package: SC-79, SOD-523 |
Stock288,000 |
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20V | 200mA | 470mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 2ns | 15µA @ 10V | 15pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | SSMini2-F4 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 20A ITO220AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.07V @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 350µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
- Operating Temperature - Junction: -40°C ~ 150°C
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Package: TO-220-3 Full Pack, Isolated Tab |
Stock6,576 |
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100V | 20A | 1.07V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 100V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 8A TO277A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 900mV @ 8A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 2µA @ 90V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-277, 3-PowerDFN |
Stock2,944 |
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90V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 90V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Powerex Inc. |
DIODE MODULE 1.2KV 1800A DO200AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 1800A
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25µs
- Current - Reverse Leakage @ Vr: 150mA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis Mount
- Package / Case: DO-200AB, B-PUK
- Supplier Device Package: DO-200AB, B-PUK
- Operating Temperature - Junction: -
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Package: DO-200AB, B-PUK |
Stock5,952 |
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1200V | 1800A | 1.2V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 25µs | 150mA @ 1200V | - | Chassis Mount | DO-200AB, B-PUK | DO-200AB, B-PUK | - |
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Powerex Inc. |
DIODE GEN PURP 3.6KV 300A DO200
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 3600V
- Current - Average Rectified (Io): 300A
- Voltage - Forward (Vf) (Max) @ If: 2.15V @ 1500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 9µs
- Current - Reverse Leakage @ Vr: 50mA @ 3600V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-200AA, A-PUK
- Supplier Device Package: DO-200AA, R62
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: DO-200AA, A-PUK |
Stock5,088 |
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3600V | 300A | 2.15V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 50mA @ 3600V | - | Chassis, Stud Mount | DO-200AA, A-PUK | DO-200AA, R62 | -65°C ~ 200°C |
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Powerex Inc. |
DIODE GEN PURP 800V 100A DO205AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.3µs
- Current - Reverse Leakage @ Vr: -
- Capacitance @ Vr, F: -
- Mounting Type: Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: -
- Operating Temperature - Junction: -40°C ~ 125°C
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Package: DO-205AA, DO-8, Stud |
Stock3,744 |
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800V | 100A | - | Standard Recovery >500ns, > 200mA (Io) | 2.3µs | - | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 300MA D5D
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 300mA
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20ns
- Current - Reverse Leakage @ Vr: 500nA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF, D
- Supplier Device Package: D-5D
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: SQ-MELF, D |
Stock7,168 |
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100V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 100V | - | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 16A,
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300µA @ 100V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 |
Stock7,840 |
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100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, SCHOTTKY, STANDARD, 5A, 1
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.02V @ 5A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 150V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: ITO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: TO-220-2 Full Pack |
Stock7,472 |
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150V | 5A | 1.02V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 4A DO201AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30ns
- Current - Reverse Leakage @ Vr: 5µA @ 100V
- Capacitance @ Vr, F: 20pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-201AD, Axial
- Supplier Device Package: DO-201AD
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: DO-201AD, Axial |
Stock2,112 |
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100V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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TSC America Inc. |
DIODE, HIGH EFFICIENT, 3A, 400V,
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50ns
- Current - Reverse Leakage @ Vr: 10µA @ 400V
- Capacitance @ Vr, F: 40pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AA, SMB
- Supplier Device Package: DO-214AA (SMB)
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: DO-214AA, SMB |
Stock5,440 |
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400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 4A 30V DO-214AC
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 4A
- Voltage - Forward (Vf) (Max) @ If: 450mV @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 600µA @ 30V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-214AC, SMA |
Stock4,752 |
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30V | 4A | 450mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 25V 150MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 25V
- Current - Average Rectified (Io): 150mA
- Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 25V
- Capacitance @ Vr, F: 4pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: DO-204AH, DO-35, Axial |
Stock5,296 |
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25V | 150mA | 1V @ 30mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 25V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GP 600V 1A 1=20PCS
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 5µA @ 600V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: Die |
Stock5,664 |
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600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 12A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 25µA @ 200V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -65°C ~ 150°C
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Package: DO-203AA, DO-4, Stud |
Stock6,128 |
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200V | 12A | 1.4V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 25µA @ 200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 5A AXIAL
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 5A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2µs
- Current - Reverse Leakage @ Vr: 1µA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: B, Axial
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 175°C
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Package: B, Axial |
Stock7,656 |
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800V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Fairchild/ON Semiconductor |
DIODE SCHOTTKY 30V 200MA SOD523F
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1µA @ 10V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SC-79, SOD-523F
- Supplier Device Package: SOD-523F
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: SC-79, SOD-523F |
Stock1,996,644 |
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30V | 200mA | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 1µA @ 10V | - | Surface Mount | SC-79, SOD-523F | SOD-523F | -55°C ~ 125°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 300µA @ 600V
- Capacitance @ Vr, F: 550pF @ 1V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
- Operating Temperature - Junction: 175°C (Max)
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock22,416 |
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650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Micro Commercial Co |
Interface
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 6A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 100pF @ 4V, 1MHz
- Mounting Type: Through Hole
- Package / Case: R-6, Axial
- Supplier Device Package: R-6
- Operating Temperature - Junction: -55°C ~ 150°C
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Package: - |
Request a Quote |
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200 V | 6A | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 200 V | 100pF @ 4V, 1MHz | Through Hole | R-6, Axial | R-6 | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE GEN PURP 200V 1.1A PMDTM
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 1.1A
- Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SOD-128
- Supplier Device Package: PMDTM
- Operating Temperature - Junction: 150°C (Max)
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Package: - |
Stock9,369 |
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200 V | 1.1A | 980 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 10 µA @ 200 V | - | Surface Mount | SOD-128 | PMDTM | 150°C (Max) |
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Semtech Corporation |
DIODE SCHOTTKY 40V 3A TR
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 40 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: SQ-MELF
- Supplier Device Package: -
- Operating Temperature - Junction: -65°C ~ 125°C
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Package: - |
Request a Quote |
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40 V | 3A | 500 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Surface Mount | SQ-MELF | - | -65°C ~ 125°C |
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Diotec Semiconductor |
SCHOTTKY SOD-80 20V 0.35A
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 20 V
- Current - Average Rectified (Io): 350mA
- Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 10 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 10 V
- Capacitance @ Vr, F: 50pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-213AC, MINI-MELF, SOD-80
- Supplier Device Package: SOD-80C
- Operating Temperature - Junction: -55°C ~ 125°C
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Package: - |
Stock7,500 |
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20 V | 350mA | 600 mV @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | 5 µA @ 10 V | 50pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80C | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 250V 200MA DO35
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 250 V
- Current - Average Rectified (Io): 200mA
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 nA @ 250 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: DO-204AH, DO-35, Axial
- Supplier Device Package: DO-35
- Operating Temperature - Junction: -65°C ~ 200°C
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Package: - |
Stock7,398 |
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250 V | 200mA | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 50 nA @ 250 V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |