Page 1883 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

SSC53LHE3/57T
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 5A DO214AB

Package: DO-214AB, SMC

Stock3,280
SUF30J-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 3A P600

Package: P600, Axial

Stock4,704
VS-VSKE320-08PBF
Vishay Semiconductor Diodes Division

DIODE GEN 800V 320A MAGNAPAK

Package: MAGN-A-PAK (3)

Stock2,640
DS75-08B
IXYS

DIODE GEN PURP 800V 110A DO203AB

Package: DO-203AB, DO-5, Stud

Stock5,184
VS-12TQ035SHM3
Vishay Semiconductor Diodes Division

DIODE

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock3,248
SRAF8150 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

Package: TO-220-2 Full Pack

Stock6,416
MBRS1650 MNG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Stock6,128
SSL32 R7G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Package: DO-214AB, SMC

Stock5,120
S1PDHM3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO220AA

Package: DO-220AA

Stock7,824
RSFKL MTG
TSC America Inc.

DIODE, FAST, 0.5A, 800V, 500NS,

Package: DO-219AB

Stock7,712
MBR120LSFT1G
ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD123L

Package: SOD-123F

Stock4,886,484
RB051MM-2YTR
Rohm Semiconductor

DIODE SCHOTTKY 20V 3A PMDU

Package: SOD-123F

Stock7,328
SK16-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 1A DO214AA

Package: DO-214AA, SMB

Stock91,386
SI-A8000
Diotec Semiconductor

IC

Package: -

Request a Quote
NTE6122
NTE Electronics, Inc

DIODE GP 1.6KV 3000A DO200AC

Package: -

Request a Quote
S8M_R1_00001
Panjit International Inc.

DIODE GEN PURP 1KV 8A SMC

Package: -

Stock8,589
MBR20H150YD_L2_00001
Panjit International Inc.

DIODE SCHOTTKY 150V 20A TO252

Package: -

Stock14,352
IDC51D120T6MX1SA3
Infineon Technologies

DIODE GP 1.2KV 100A WAFER

Package: -

Request a Quote
VS-3C12ET07S2L-M3
Vishay General Semiconductor - Diodes Division

650 V POWER SIC GEN 3 MERGED PIN

Package: -

Stock4,671
HSB83JTL
Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

Package: -

Request a Quote

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SSC53LHE3/57T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 450mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 700µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock3,280	30V	5A	450mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	700µA @ 30V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 150°C
SUF30J-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A P600 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 2V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: P600, Axial Supplier Device Package: P600 Operating Temperature - Junction: -55°C ~ 150°C	Package: P600, Axial	Stock4,704	600V	3A	2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	-	Through Hole	P600, Axial	P600	-55°C ~ 150°C
VS-VSKE320-08PBF	Vishay Semiconductor Diodes Division	DIODE GEN 800V 320A MAGNAPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 320A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: MAGN-A-PAK (3) Supplier Device Package: MAGN-A-PAK? Operating Temperature - Junction: -40°C ~ 150°C	Package: MAGN-A-PAK (3)	Stock2,640	800V	320A	-	Standard Recovery >500ns, > 200mA (Io)	-	50mA @ 800V	-	Chassis Mount	MAGN-A-PAK (3)	MAGN-A-PAK?	-40°C ~ 150°C
DS75-08B	IXYS	DIODE GEN PURP 800V 110A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	Package: DO-203AB, DO-5, Stud	Stock5,184	800V	110A	1.17V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	6mA @ 800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 180°C
VS-12TQ035SHM3	Vishay Semiconductor Diodes Division	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.75mA @ 35V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock3,248	35V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.75mA @ 35V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SRAF8150 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 150V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	Package: TO-220-2 Full Pack	Stock6,416	150V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
MBRS1650 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 750mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	Stock6,128	50V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
SSL32 R7G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 410mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AB, SMC	Stock5,120	20V	3A	410mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 125°C
S1PDHM3/84A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO220AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 1µA @ 200V Capacitance @ Vr, F: 6pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-220AA	Stock7,824	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	1µA @ 200V	6pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
RSFKL MTG	TSC America Inc.	DIODE, FAST, 0.5A, 800V, 500NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-219AB	Stock7,712	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MBR120LSFT1G	ON Semiconductor	DIODE SCHOTTKY 20V 1A SOD123L Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123L Operating Temperature - Junction: -55°C ~ 125°C	Package: SOD-123F	Stock4,886,484	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	SOD-123F	SOD-123L	-55°C ~ 125°C
RB051MM-2YTR	Rohm Semiconductor	DIODE SCHOTTKY 20V 3A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 460mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 900µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 125°C (Max)	Package: SOD-123F	Stock7,328	20V	3A	460mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	900µA @ 20V	-	Surface Mount	SOD-123F	PMDU	125°C (Max)
SK16-TP	Micro Commercial Co	DIODE SCHOTTKY 60V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 720mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 60V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -55°C ~ 125°C	Package: DO-214AA, SMB	Stock91,386	60V	1A	720mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 125°C
SI-A8000	Diotec Semiconductor	IC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 24000 V Current - Average Rectified (Io): 1.8A Voltage - Forward (Vf) (Max) @ If: 15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 5 µA @ 24000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: UGE Supplier Device Package: Hockey Puck Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	24000 V	1.8A	15 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	5 µA @ 24000 V	-	Chassis Mount	UGE	Hockey Puck	-50°C ~ 150°C
NTE6122	NTE Electronics, Inc	DIODE GP 1.6KV 3000A DO200AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 3000A Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 75 mA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AC, K-PUK Supplier Device Package: DO-200AC Operating Temperature - Junction: -40°C ~ 180°C	Package: -	Request a Quote	1600 V	3000A	1.41 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	-	75 mA @ 1600 V	-	Clamp On	DO-200AC, K-PUK	DO-200AC	-40°C ~ 180°C
S8M_R1_00001	Panjit International Inc.	DIODE GEN PURP 1KV 8A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock8,589	1000 V	8A	985 mV @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
MBR20H150YD_L2_00001	Panjit International Inc.	DIODE SCHOTTKY 150V 20A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 nA @ 150 V Capacitance @ Vr, F: 350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock14,352	150 V	20A	900 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 nA @ 150 V	350pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-55°C ~ 175°C
IDC51D120T6MX1SA3	Infineon Technologies	DIODE GP 1.2KV 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2.05 V @ 100 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	Package: -	Request a Quote	1200 V	100A	2.05 V @ 100 A	Standard Recovery >500ns, > 200mA (Io)	-	18 µA @ 1200 V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
VS-3C12ET07S2L-M3	Vishay General Semiconductor - Diodes Division	650 V POWER SIC GEN 3 MERGED PIN Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 65 µA @ 650 V Capacitance @ Vr, F: 535pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,671	650 V	12A	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	65 µA @ 650 V	535pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 175°C
HSB83JTL	Renesas Electronics Corporation	DIODE FOR HIGH VOLTAGE SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N6772R	Microchip Technology	DIODE GEN PURP 400V 8A TO257 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Current - Reverse Leakage @ Vr: 10 µA @ 320 V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -	Package: -	Request a Quote	400 V	8A	1.6 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	10 µA @ 320 V	200pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-
NSVBASH19LT1G	onsemi	DIODE GP 120V 200MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 120 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 100 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock18,000	120 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 100 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 175°C
SK55LHE3-TP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 50 V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	50 V	5A	750 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 50 V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
APT10SCE65K	Microsemi Corporation	DIODE SCHOTTKY 650V 10A TO220 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SR105-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	Package: -	Request a Quote	50 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 125°C
MBR310AFC-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 100V 3A SMAF-C Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF-C Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock207	100 V	3A	800 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	20pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAF-C	-55°C ~ 150°C
NSVBAS70LT1	onsemi	DIODE SCHOTTKY 70V 70MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 70 V Current - Average Rectified (Io): 70mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 70 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	70 V	70mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	10 µA @ 70 V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)	-55°C ~ 150°C
BAS21HMFHT116	Rohm Semiconductor	DIODE GEN PURP 200V 200MA SSD3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SSD3 Operating Temperature - Junction: 150°C (Max)	Package: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	2.5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SSD3	150°C (Max)