Page 215 - Diodes - Rectifiers - Single | Discrete Semiconductor Products

IDC08S60CEX1SA2
Infineon Technologies

DIODE SIC 600V 8A SAWN WAFER

Package: Die

Stock5,568
1N4446 BK
Central Semiconductor Corp

DIODE GEN PURP 100V 150MA DO35

Package: DO-204AH, DO-35, Axial

Stock3,344
CRSH2-10 BK
Central Semiconductor Corp

DIODE SCHOTTKY DO15

Package: DO-204AC, DO-15, Axial

Stock6,464
CFRM101-HF
Comchip Technology

DIODE GEN PURP 50V 1A MINISMA

Package: SOD-123T

Stock2,304
US1B/1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Package: DO-214AC, SMA

Stock5,456
A398M
Powerex Inc.

DIODE GEN PURP 600V 400A DO200AA

Package: DO-200AA, A-PUK

Stock5,664
1N5420
Semtech Corporation

D MET 3A FAST 600V

Package: -

Stock6,704
FR40J05
GeneSiC Semiconductor

DIODE GEN PURP 600V 40A DO5

Package: DO-203AB, DO-5, Stud

Stock2,096
1N3595UR-1
Microsemi Corporation

DIODE GEN PURP 125V 150MA DO213

Package: DO-213AA

Stock2,832
SSC54HE3_A/H
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO214AB

Package: DO-214AB, SMC

Stock8,364
BYV27-050-TR
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 55V 2A SOD57

Package: SOD-57, Axial

Stock3,504
BYM07-400HE3/83
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 500MA DO213

Package: DO-213AA (Glass)

Stock3,664
SD103CWS-HG3-08
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 350MA SOD323

Package: SC-76, SOD-323

Stock5,904
1N4006-G
Comchip Technology

DIODE GEN PURP 800V 1A DO41

Package: DO-204AL, DO-41, Axial

Stock6,576
RB075BM40STL
Rohm Semiconductor

DIODE SCHOTTKY 40V 5A TO252

Package: TO-252-3, DPak (2 Leads + Tab), SC-63

Stock3,360
JANTXV1N4148UR-1
Aeroflex Metelics, Division of MACOM

DIODE SW 75V 200MA DO213AA

Package: DO-213AA

Stock6,672
TMMBAT48FILM
STMicroelectronics

DIODE SCHOTTKY 40V 350MA MINMELF

Package: DO-213AA (Glass)

Stock772,548
NRVUS1JFA
onsemi

DIODE GEN PURP 600V 1A SOD123FL

Package: -

Request a Quote
RB521VM-30TE-17
Rohm Semiconductor

DIODE SCHOTTKY 30V 200MA UMD2

Package: -

Stock48,825
IDDD10G65C6XTMA1
Infineon Technologies

DIODE SIL CARB 650V 29A HDSOP-10

Package: -

Stock4,629

Part Number	Manufacturer	Description	Package	Stock	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDC08S60CEX1SA2	Infineon Technologies	DIODE SIC 600V 8A SAWN WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: 310pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	Package: Die	Stock5,568	600V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
1N4446 BK	Central Semiconductor Corp	DIODE GEN PURP 100V 150MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1V @ 20mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 200°C	Package: DO-204AH, DO-35, Axial	Stock3,344	100V	150mA	1V @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
CRSH2-10 BK	Central Semiconductor Corp	DIODE SCHOTTKY DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-204AC, DO-15, Axial	Stock6,464	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	170pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
CFRM101-HF	Comchip Technology	DIODE GEN PURP 50V 1A MINISMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: Mini SMA/SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	Package: SOD-123T	Stock2,304	50V	1A (DC)	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	SOD-123T	Mini SMA/SOD-123	-55°C ~ 150°C
US1B/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-214AC, SMA	Stock5,456	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 175°C
A398M	Powerex Inc.	DIODE GEN PURP 600V 400A DO200AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 400A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, A-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 175°C	Package: DO-200AA, A-PUK	Stock5,664	600V	400A	-	Standard Recovery >500ns, > 200mA (Io)	1.5µs	-	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 175°C
1N5420	Semtech Corporation	D MET 3A FAST 600V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	Package: -	Stock6,704	-	-	-	-	-	-	-	-	-	-	-
FR40J05	GeneSiC Semiconductor	DIODE GEN PURP 600V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	Package: DO-203AB, DO-5, Stud	Stock2,096	600V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
1N3595UR-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 125V Current - Average Rectified (Io): 150mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 1nA @ 125V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA	Stock2,832	125V	150mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
SSC54HE3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 490mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -65°C ~ 150°C	Package: DO-214AB, SMC	Stock8,364	40V	5A	490mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-65°C ~ 150°C
BYV27-050-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 55V 2A SOD57 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 55V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 1µA @ 55V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-57, Axial Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C	Package: SOD-57, Axial	Stock3,504	55V	2A	1.07V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 55V	-	Through Hole	SOD-57, Axial	SOD-57	-55°C ~ 175°C
BYM07-400HE3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 500MA DO213 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA (Glass)	Stock3,664	400V	500mA	1.35V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
SD103CWS-HG3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 350MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 125°C (Max)	Package: SC-76, SOD-323	Stock5,904	20V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	125°C (Max)
1N4006-G	Comchip Technology	DIODE GEN PURP 800V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	Package: DO-204AL, DO-41, Axial	Stock6,576	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
RB075BM40STL	Rohm Semiconductor	DIODE SCHOTTKY 40V 5A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 750mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: 150°C (Max)	Package: TO-252-3, DPak (2 Leads + Tab), SC-63	Stock3,360	40V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 40V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	150°C (Max)
JANTXV1N4148UR-1	Aeroflex Metelics, Division of MACOM	DIODE SW 75V 200MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.2V @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 500nA @ 75V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	Package: DO-213AA	Stock6,672	75V	200mA (DC)	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
TMMBAT48FILM	STMicroelectronics	DIODE SCHOTTKY 40V 350MA MINMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 750mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 25µA @ 40V Capacitance @ Vr, F: 20pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 125°C	Package: DO-213AA (Glass)	Stock772,548	40V	350mA (DC)	750mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	25µA @ 40V	20pF @ 0V, 1MHz	Surface Mount	DO-213AA (Glass)	Mini MELF	-65°C ~ 125°C
NRVUS1JFA	onsemi	DIODE GEN PURP 600V 1A SOD123FL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123FL Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
RB521VM-30TE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 200MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30 µA @ 10 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max)	Package: -	Stock48,825	30 V	200mA	470 mV @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	30 µA @ 10 V	-	Surface Mount	SC-90, SOD-323F	UMD2	125°C (Max)
IDDD10G65C6XTMA1	Infineon Technologies	DIODE SIL CARB 650V 29A HDSOP-10 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 29A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 33 µA @ 420 V Capacitance @ Vr, F: 495pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Supplier Device Package: PG-HDSOP-10-1 Operating Temperature - Junction: -55°C ~ 175°C	Package: -	Stock4,629	650 V	29A	-	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 420 V	495pF @ 1V, 1MHz	Surface Mount	10-PowerSOP Module	PG-HDSOP-10-1	-55°C ~ 175°C
PMEG4005EJ-QF	Nexperia USA Inc.	PMEG4005EJ-Q/SOD323F/SOD323F Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 43pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F Operating Temperature - Junction: 150°C	Package: -	Request a Quote	40 V	500mA	470 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	43pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	SOD-323F	150°C
SB220	Diotec Semiconductor	IC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -50°C ~ 150°C	Package: -	Request a Quote	20 V	2A	500 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-50°C ~ 150°C
S2JF_R2_00001	Panjit International Inc.	DIODE GEN PURP 600V 2A SMBF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	600 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 600 V	10pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
NRVBA1H100T3G-VF01	onsemi	DIODE SCHOTTKY 100V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	100 V	1A	760 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 100 V	-	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 175°C
1T4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock15,000	400 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
GS1BE-TP	Micro Commercial Co	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Request a Quote	100 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
PSDP3060S1_T0_00001	Panjit International Inc.	DIODE GEN PURP 600V 30A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Current - Reverse Leakage @ Vr: 250 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	Package: -	Stock11,376	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
BD3200S_S2_00001	Panjit International Inc.	DIODE SCHOTTKY 200V 3A TO252 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -65°C ~ 175°C	Package: -	Request a Quote	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252	-65°C ~ 175°C